TLE4966G [INFINEON]

The TLE4966G is an integrated circuit double Hall-effect sensor designed specifically for highly accurate applications in the automotive sector. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. They provide a speed signal at Q2 for every magnetic pole pair and a direction information at Q1, which is provided before the speed signal.;
TLE4966G
型号: TLE4966G
厂家: Infineon    Infineon
描述:

The TLE4966G is an integrated circuit double Hall-effect sensor designed specifically for highly accurate applications in the automotive sector. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. They provide a speed signal at Q2 for every magnetic pole pair and a direction information at Q1, which is provided before the speed signal.

传感器 换能器
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Data Sheet, Rev. 1.01, October 2019  
TLE4966G  
High Precision Hall-Effect Switch with  
Direction Detection  
Sensors  
Edition 2019-10-22  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© 2007 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any  
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties  
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
TLE4966G  
Revision History:  
2019-10-22  
Rev. 1.01  
Previous Version:  
none  
Page  
Subjects (major changes since last revision)  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
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TLE4966G  
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
1.1  
1.2  
1.3  
2
2.1  
2.2  
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
5
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Electrical and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Field Direction Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
6
Timing Diagrams for the Speed and Direction Outputs . . . . . . . . . . . . 13  
7
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Distance between Chip and Package Surface . . . . . . . . . . . . . . . . . . . . . 15  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
7.1  
7.2  
7.3  
Data Sheet  
4
Rev. 1.01, 2019-10-22  
TLE4966G  
Data Sheet  
5
Rev. 1.01, 2019-10-22  
High Precision Hall-Effect Switch with Direction  
Detection  
TLE4966G  
1
Overview  
1.1  
Features  
2.7 V to 24 V supply voltage operation  
Operation from unregulated power supply  
High sensitivity and high stability  
of the magnetic switching points  
High resistance to mechanical stress  
by Active Error Compensation  
Reverse battery protection (-18 V)  
Superior temperature stability  
Peak temperatures up to 195°C without damage  
Low jitter (typ. 1 μs)  
Digital output signals  
Bipolar version  
Excellent matching between the 2 Hall probes  
Hall plate distance 1.45 mm  
Direction & speed information  
Direction signal switches before the speed signal  
SMD package PG-TSOP6-6-9  
1.2  
Functional Description  
The TLE4966G is an integrated circuit double Hall-effect sensor designed specifically for  
highly accurate applications. Precise magnetic switching points and high temperature  
stability are achieved by active compensation circuits and chopper techniques on chip.  
They provide a speed signal at Q2 for every magnetic pole pair and a direction  
information at Q1, which is provided before the speed signal.  
Type  
Ordering Code  
Package  
TLE4966G  
SP002983176  
PG-TSOP6-6-9  
Data Sheet  
6
Rev. 1.01, 2019-10-22  
TLE4966G  
Overview  
1.3  
Pin Configuration (top view)  
Center of  
Sensitive Area  
0.73 ± 0.15  
1.45  
5
6
4
± 0.15  
0.8  
s
speed  
direction  
1
2
3
Figure 1  
Pin Definition and Center of Sensitive Area  
Table 1  
Pin Definitions and Functions PG-TSOP6-6-9  
Pin No.  
Symbol  
Q2  
Function  
1
2
3
4
5
6
Speed  
GND  
Q1  
Recommended connection to GND  
Direction  
VS  
Supply voltage  
GND  
GND  
Recommended connection to GND  
Ground  
Data Sheet  
7
Rev. 1.01, 2019-10-22  
TLE4966G  
General  
2
General  
2.1  
Block Diagram  
VS  
Voltage Regulator  
(reverse polarity protected)  
ESD  
Bias and  
Compensation  
Circuits  
Oscillator  
& Sequencer  
GND  
Q2  
Amplifier Filter  
Chopped  
Hall  
Probe  
Comparator  
with  
Hysteresis  
Q1  
Amplifier Filter  
Chopped  
Hall  
Probe  
Direction  
Detection  
Figure 2  
2.2  
Block Diagram  
Circuit Description  
The chopped Double Hall Switch comprises two Hall probes, bias generator,  
compensation circuits, oscillator, and output transistors.  
The bias generator provides currents for the Hall probes and the active circuits.  
Compensation circuits stabilize the temperature behavior and reduce technology variations.  
The Active Error Compensation rejects offsets in signal stages and the influence of  
mechanical stress to the Hall probes caused by molding and soldering processes and  
other thermal stresses in the package. This chopper technique together with the threshold  
generator and the comparator ensures high accurate magnetic switching points.  
Data Sheet  
8
Rev. 1.01, 2019-10-22  
TLE4966G  
Maximum Ratings  
3
Maximum Ratings  
Table 2  
Parameter  
Absolute Maximum Ratings  
Tj = -40°C to 150°C  
Symbol  
Limit Values  
Unit  
Conditions  
min.  
max.  
Supply voltage  
VS  
-18  
-18  
-18  
18  
24  
26  
V
for 1 h, RS 200 Ω  
for 5 min, RS 200 Ω  
Supply current  
through  
IS  
-50  
50  
mA  
protection device  
Output voltage  
VQ  
IQ  
Tj  
-0.7  
-0.7  
18  
26  
V
for 5 min @ 1.2 kΩ pull up  
Continuous  
output current  
-50  
50  
mA  
°C  
Junction  
temperature  
155  
165  
175  
195  
for 2000 h (not additive)  
for 1000 h (not additive)  
for 168 h (not additive)  
for 3 x 1 h (additive)  
Storage  
temperature  
TS  
B
-40  
150  
°C  
Magnetic flux  
density  
unlimited  
mT  
Note: Stresses above those listed here may cause permanent damage to the device.  
Exposure to absolute maximum rating conditions for extended periods may affect  
device reliability.  
Table 3  
ESD Protection 1)  
Symbol  
Parameter  
Limit Values  
Unit  
Notes  
min.  
max.  
ESD voltage  
VESD  
±4  
kV  
HBM, R = 1.5 kΩ,  
C = 100 pF  
TA = 25°C  
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and  
Mil. Std. 883D method 3015.7  
Data Sheet  
9
Rev. 1.01, 2019-10-22  
TLE4966G  
Operating Range  
4
Operating Range  
Table 4  
Operating Range  
Symbol  
Parameter  
Limit Values  
Unit  
Conditions  
min.  
typ.  
max.  
Supply voltage  
VS  
2.7  
18  
24  
26  
V
1 h with RS 200 Ω  
for 5 min RS 200 Ω  
Output voltage  
VQ  
Tj  
-0.7  
18  
V
Junction  
temperature  
-40  
150  
175  
°C  
for 168 h  
Output current  
IQ  
0
10  
mA  
Data Sheet  
10  
Rev. 1.01, 2019-10-22  
TLE4966G  
Electrical and Magnetic Parameters  
5
Electrical and Magnetic Parameters  
1)  
Table 5  
Electrical Characteristics  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit Conditions  
Supply current  
IS  
4
0
5.2  
0.2  
0.3  
7
mA  
mA  
V
VS = 2.7 V ... 18 V  
Reverse current  
ISR  
1
VS = -18 V  
IQ = 10 mA  
Output saturation  
voltage  
VQSAT  
0.6  
Output leakage  
current  
IQLEAK  
0.05  
10  
μA  
for VQ = 18 V  
Output fall time  
Output rise time  
tf  
tr  
0.2  
0.2  
1
1
μs  
μs  
R
L = 1.2 k  
see:  
Figure 3 on Page 13  
Ω; CL < 50 pF  
Chopper frequency  
fOSC  
320  
kHz  
Switching frequency fSW  
Delay time 3)  
0
15 2) kHz  
μs  
1000 ns  
td  
13  
200  
1
Count Signal Delay  
Output jitter 4)  
tdc  
tQJ  
50  
μsRMS Typ. value for square-  
wave signal 1 kHz  
Repeatability of  
BREP  
40  
μTRMS Typ. value for  
ΔB/Δt > 12 mT/ms  
magnetic thresholds 5)  
Power-on time 6)  
tPON  
13  
μs  
VS 2.7 V  
Distance of hall plates dHALL  
Thermal resistance 7) RthJA  
1.45  
100  
mm  
K/W  
PG-TSOP6-6-9  
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12 V and TA = 25°C  
2) To operate the sensor at the max. switching frequency, the magnetic signal amplitude must be 1.4 times  
higher than for static fields. This is due to the -3 dB corner frequency of the low pass filter in the signal path.  
3) Systematic delay between magnetic threshold reached and output switching  
4) Jitter is the unpredictable deviation of the output switching delay  
5)  
BREP is equivalent to the noise constant  
6) Time from applying VS 2.7 V to the sensor until the output state is valid  
7) Thermal resistance from junction to ambient  
Data Sheet  
11  
Rev. 1.01, 2019-10-22  
TLE4966G  
Electrical and Magnetic Parameters  
Calculation of the ambient temperature (PG-TSOP6-6-9 example)  
e.g. for VS = 12.0 V, IStyp = 5.5 mA, VQSATtyp = 0.3 V and 2 x IQ = 10 mA :  
Power Dissipation: PDIS = 72.0 mW.  
In TA = Tj – (RthJA × PDIS) = 175°C – (100 K / W × 0.072 W)  
Resulting max. ambient temperature: TA = 167.8°C  
Table 6  
Magnetic Characteristics 1)  
.
Parameter  
Symbol Tj [°C]  
Limit Values  
Unit  
Conditions  
min.  
typ.  
max.  
Operate point  
Release point  
Hysteresis  
BOP  
-40  
25  
150  
5.2  
5.0  
4.7  
7.7  
7.5  
7.1  
10.3  
10.0  
9.5  
mT  
BRP  
-40  
25  
150  
-10.3  
-10.0  
-9.5  
-7.7  
-7.5  
-7.1  
-5.2  
-5.0  
-4.7  
mT  
mT  
mT  
BHYS  
-40  
25  
150  
10.0  
15.0  
20.0  
Magnetic  
matching  
BMATCH  
-40  
25  
150  
-2.0  
0
2.0  
Valid for  
B
OP1 - BOP2  
and  
B
RP1 - BRP2  
Magnetic offset BOFF  
-40  
25  
150  
-2.0  
0
2.0  
mT  
(BOP + BRP)/2  
Temperature  
compensation of  
magnetic  
-350  
ppm/°C  
TC  
thresholds  
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12 V  
Note: Typical characteristics specify mean values expected over the production spread.  
Field Direction Definition  
Positive magnetic fields related with south pole of magnet to the branded side of  
package.  
Data Sheet  
12  
Rev. 1.01, 2019-10-22  
TLE4966G  
Timing Diagrams for the Speed and Direction Outputs  
6
Timing Diagrams for the Speed and Direction  
Outputs  
Applied Magnetic Field  
BOP  
BRP  
td  
tf  
td  
tr  
VQ  
90%  
10%  
Figure 3  
Timing Definition of the Speed Signal  
tdc  
tdc  
Speed  
Direction  
t
Change of Direction  
Figure 4  
Timing Definition of the Direction Signal  
Data Sheet  
13  
Rev. 1.01, 2019-10-22  
TLE4966G  
Timing Diagrams for the Speed and Direction Outputs  
N
S
S
N
N
S
N
S
S
N
Rotation  
Direction  
Branded Side of  
IC  
N
S
TLE4966  
Figure 5  
Definition of the Direction Signal  
Rotation Direction  
Left to right  
State of Direction Output VQ1  
Low  
Right to left  
High  
Data Sheet  
14  
Rev. 1.01, 2019-10-22  
TLE4966G  
Package Information  
7
Package Information  
7.1  
Package Marking  
S
6G  
Figure 6  
7.2  
Marking PG-TSOP6-6-9  
Distance between Chip and Package Surface  
Branded Side  
0.56 ± 0.1 mm  
Figure 7  
Distance Chip to Upper Side of IC  
Data Sheet  
15  
Rev. 1.01, 2019-10-22  
TLE4966G  
Package Information  
7.3  
Package Outlines  
Figure 8  
PG-TSOP6-6-9 (Plastic Thin Small Outline Package)  
PCB Footprint for PG-TSOP6-6-9  
The following picture shows a recommendation for the PCB layout.  
0.5  
0.95  
Figure 9  
Footprint PG-TSOP6-6-9  
You can find all of our packages, sorts of packing and others in our  
Infineon Internet Page “Products”: http://www.infineon.com/products.  
Dimensions in mm  
Data Sheet  
16  
Rev. 1.01, 2019-10-22  
w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  

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