TLE4964-3M [INFINEON]
The TLE4964-3M is an integrated Hall effect switch designed specifically for highly accurate applications with superior supply voltage capability, operating temperature range and temperature stability of the magnetic thresholds.;
| 型号： | TLE4964-3M |
| 厂家： | 
Infineon |
| 描述： | The TLE4964-3M is an integrated Hall effect switch designed specifically for highly accurate applications with superior supply voltage capability, operating temperature range and temperature stability of the magnetic thresholds. 输出元件 传感器 换能器 |
| 文件： | 总27页 (文件大小：927K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Unipolar Hall Switch
High Precision Automotive Unipolar Hall Effect Switch
TLE4964-3M
SP001013860
TLE4964-3M
Data Sheet
Revision 1.2, 2019-12-20
Sense & Control
TLE4964-3M
Table of contents
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
List of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
List of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Target applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.1
1.2
1.3
1.4
2
Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Functional block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Default start-up behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.1
2.2
2.3
2.4
2.5
2.6
3
Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Electrical and magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1
3.2
3.3
3.4
3.5
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Package outline PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Packing information PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Footprint PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PG-SOT23-3-15 distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Package marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.1
4.2
4.3
4.4
4.5
5
6
7
Graphs of the magnetic parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Graphs of the electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
2
Revision 1.2, 2019-12-20
TLE4964-3M
List of tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin description PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Absolute maximum rating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
ESD protection (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Operating conditions parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
General electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Data Sheet
3
Revision 1.2, 2019-12-20
TLE4964-3M
List of figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
TLE4964-3M in the PG-SOT23-3-15 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin configuration and center of sensitive area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Functional block diagram TLE4964-3M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Timing diagram TLE4964-3M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Output signal TLE4964-3M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Start-up behavior of the TLE4964-3M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Basic application circuit #1: only pull-up resistor is necessary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Enhanced application circuit #2: for extended ESD robustness. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Definition of magnetic field direction PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 10 EMC test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 11 PG-SOT23-3-15 package outline (all dimensions in mm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 12 Packing of the PG-SOT23-3-15 in a tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 13 Footprint PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 14 Distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 15 Marking of TLE4964-3M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 16 Operating point (BOP) of the TLE4964-3M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 17 Release point (BRP) of the TLE4964-3M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 18 Hysteresis (BHys) of the TLE4964-3M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 19 Power on time tPON of the TLE4964-3M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 20 Signal delay time of the TLE4964-3M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 21 Supply current of the TLE4964-3M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 22 Supply current of the TLE4964-3M over supply voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 23 Output current limit of the TLE4964-3M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 24 Output current limit of the TLE4964-3M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 25 Output fall time of the TLE4964-3M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 26 Output fall time of the TLE4964-3M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 27 Output rise time of the TLE4964-3M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 28 Output rise time of the TLE4964-3M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 29 Output leakage current of the TLE4964-3M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 30 Saturation voltage of the TLE4964-3M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 31 Saturation voltage of the TLE4964-3M over output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 32 Effective noise of the TLE4964-3M thresholds over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 33 Output signal jitter of the TLE4964-3M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Data Sheet
4
Revision 1.2, 2019-12-20
TLE4964-3M
Product description
1
Product description
1.1
Overview
Characteristic
Supply Voltage Supply Current Sensitivity
Interface
Temperature
-40°C to 170°C
Unipolar Hall
Effect Switch
3.0 V ~ 32 V
1.6 mA
Medium
Open Drain
Output
BOP: 12.5 mT
BRP: 9.5 mT
Figure 1
TLE4964-3M in the PG-SOT23-3-15 package
1.2
Features
•
•
•
•
•
•
•
•
•
•
3.0 V to 32 V operating supply voltage
Operation from unregulated power supply
Reverse polarity protection (-18 V)
Overvoltage capability up to 42 V without external resistor
Output overcurrent and overtemperature protection
Active error compensation
High stability of magnetic thresholds
Low jitter (typ. 0.35 μs)
High ESD performance
Small SMD package PG-SOT23-3-15
Table 1
Ordering information
Product name
Product type
Ordering code
Package
TLE4964-3M
Unipolar Hall Switch
SP001013860
PG-SOT23-3-15
Data Sheet
5
Revision 1.2, 2019-12-20
TLE4964-3M
Product description
1.3
Target applications
Target applications for the TLE496x Hall Switch family are all applications which require a high precision
Hall Switch with an operating temperature range from -40°C to 170°C. Its superior supply voltage range from
3.0 V to 32 V with overvoltage capability (e.g. load-dump) up to 42 V without external resistor makes it ideally
suited for automotive and industrial applications.
The TLE4964-3M is a unipolar switch with a typical operating point BOP = 12.5 mT and a hysteresis of
BHYS = 3.0 mT. It is ideally suited for various position detection applications.
1.4
Product validation
Qualified for automotive applications. Product validation according to AEC-Q100.
Data Sheet
6
Revision 1.2, 2019-12-20
TLE4964-3M
Functional description
2
Functional description
2.1
General
The TLE4964-3M is an integrated Hall effect switch designed specifically for highly accurate applications with
superior supply voltage capability, operating temperature range and temperature stability of the magnetic
thresholds.
2.2
Pin configuration (top view)
Center of
Sensitive Area
3
0.65± 0.1
1
2
1.45± 0.1
SOT23
Figure 2
Pin configuration and center of sensitive area
Pin description
2.3
Table 2
Pin description PG-SOT23-3-15
Pin no.
Symbol
VDD
Q
Function
Supply voltage
Output
1
2
3
GND
Ground
Data Sheet
7
Revision 1.2, 2019-12-20
TLE4964-3M
Functional description
2.4
Block diagram
VDD
To All Subcircuits
Voltage
Regulator
Oscillator and
Sequencer
Bias and
Compensation
Circuits
Reference
Q
Amplifier
Control
Spinning Hall
Probe
Comparator
with
Hysteresis
Low Pass
Filter
Overtemperature
& overcurrent
protection
GND
Figure 3
Functional block diagram TLE4964-3M
Data Sheet
8
Revision 1.2, 2019-12-20
TLE4964-3M
Functional description
2.5
Functional block description
The chopped Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator and
output transistor.
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize
the temperature behavior and reduce influence of technology variations.
The active error compensation (chopping technique) rejects offsets in the signal path and the influence of
mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stress in
the package. The chopped measurement principle together with the threshold generator and the comparator
ensures highly accurate and temperature stable magnetic thresholds.
The output transistor has an integrated overcurrent and overtemperature protection.
Applied
Magnetic
Field
BOP
BRP
td
tf
td
tr
VQ
90%
10%
Figure 4
Timing diagram TLE4964-3M
VQ
B
0 BRP
BOP
Figure 5
Output signal TLE4964-3M
Data Sheet
9
Revision 1.2, 2019-12-20
TLE4964-3M
Functional description
2.6
Default start-up behavior
The magnetic thresholds exhibit a hysteresis BHYS = BOP - BRP. In case of a power-on with a magnetic field B
within hysteresis (BOP > B > BRP) the output of the sensor is set to the pull up voltage level (VQ) per default. After
the first crossing of BOP or BRP of the magnetic field the internal decision logic is set to the corresponding
magnetic input value.
VDDA is the internal supply voltage which is following the external supply voltage VDD.
This means for B > BOP the output is switching, for B < BRP and BOP > B > BRP the output stays at VQ.
VDDA
tPon
3V
The device always applies
Power on ramp
VQ level at start-up
t
VQ
independent from the
applied magnetic field !
Magnetic field above threshold
B > BOP
t
VQ
Magnetic field below threshold
B < BRP
t
t
VQ
Magnetic field in hysteresis
BOP > B > BRP
Figure 6
Start-up behavior of the TLE4964-3M
Data Sheet
10
Revision 1.2, 2019-12-20
TLE4964-3M
Specification
3
Specification
3.1
Application circuit
The following Figure 7 shows the basic option of an application circuit. Only a pull-up resistor RQ is necessary.
An external series resistor for VS is not needed. The resistor RQ has to be in a dimension to match the applied
VS to keep IQ limited to the operating range of maximum 25 mA.
e.g.: VS = 12 V and RQ = 1200 Ω gives IQ = 12 V/1200 Ω = 10 mA
Vs
VDD
RQ = 1.2kΩ
Q
GND
Figure 7
Basic application circuit #1: only pull-up resistor is necessary
Vs
VDD
RQ = 1.2kΩ
Q
CDD = 47nF
TVS diode
e.g. ESD24VS2U
GND
Figure 8
Enhanced application circuit #2: for extended ESD robustness
With an additional capacitor CDD and a transient voltage suppression (TVS) diode an extended ESD robustness
of 15 kV on system level is achieved (Figure 8). If an increased robustness for e.g. testpulse 1 is required,
a serial resistor in the supply needs to be added (see also Chapter 3.5).
Data Sheet
11
Revision 1.2, 2019-12-20
TLE4964-3M
Specification
3.2
Absolute maximum ratings
Table 3
Absolute maximum rating parameters
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
Typ.
Max.
Supply voltage1)
VDD
VQ
-18
–
32
42
V
–
10h, no external resistor required
Output voltage
-0.5
-70
-40
–
–
–
32
–
V
–
–
Reverse output current IQ
Junction temperature1) TJ
mA
°C
155
165
175
195
for 2000h (not additive)
for 1000h (not additive)
for 168h (not additive)
for 3 x 1h (additive)
Storage temperature
TS
-40
–
–
–
150
300
°C
–
for PG-SOT23-3-15 (2s2p)
Thermal resistance
Junction ambient
RthJA
K/W
for PG-SOT23-3-15
Thermal resistance
Junction lead
RthJL
–
–
100
K/W
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual
lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement.
The lifetime statement shall in no event extend the agreed warranty period.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):
e.g. for: VDD = 12 V, IS = 2.5 mA, VQSAT = 0.5 V, IQ = 20 mA
Power dissipation: PDIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mW
Temperature ∆T = RthJA x PDIS = 300 K/W x 40 mW = 12 K
For TA = 150°C: TJ = TA + ∆T = 150°C + 12 K = 162°C
Data Sheet
12
Revision 1.2, 2019-12-20
TLE4964-3M
Specification
Table 4
ESD protection1) (TA = 25°C)
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
-7
Typ.
Max.
7
ESD voltage (HBM)2)
ESD voltage (CDM)3)
ESD voltage (system level)4) VESD
VESD
VESD
–
–
–
kV
kV
kV
R = 1.5 kΩ, C = 100 pF
-1
1
–
-15
15
with circuit shown in and Figure 8
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.
3) Charge device model (CDM) tests according to JESD22-C101.
4) Gun test (2 kΩ / 330 pF or 330 Ω / 150 pF) according to ISO 10605-2008.
3.3
Operating range
The following operating conditions must not be exceeded in order to ensure correct operation of
the TLE4964-3M.
All parameters specified in the following sections refer to these operating conditions unless otherwise
mentioned.
The maximum tested magnetic field is 600 mT.
Table 5
Operating conditions parameters
Symbol
Parameter
Values
Typ.
Unit Note or
Test Condition
Min.
3.0
-0.3
-40
0
Max.
321)
32
Supply voltage
VDD
VQ
TJ
–
–
–
–
–
V
–
Output voltage
V
–
–
–
–
Junction temperature
170
25
°C
mA
kHz
Output current
IQ
Magnetic signal input frequency2) fSW
0
10
1) Latch-up test with factor 1.5 is not covered. Please see max ratings also.
2) For operation at the maximum switching frequency the magnetic input signal must be 1.4 times higher than for static
fields.This is due to the -3 dB corner frequency of the internal low-pass filter in the signal path.
Data Sheet
13
Revision 1.2, 2019-12-20
TLE4964-3M
Specification
3.4
Electrical and magnetic characteristics
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient
temperature range. Typical characteristics are the median of the production and correspond to VDD = 12 V and
TA = 25°C. The below listed specification is valid in combination with the application circuit shown in Figure 7
and Figure 8.
Table 6
General electrical characteristics
Parameter
Symbol
Min.
Values
Typ.
1.6
Unit Note or Test Condition
Max.
2.5
1
Supply current
Reverse current
IS
1.1
–
mA
mA
V
–
ISR
0.05
0.2
for VDD = -18 V
IQ = 20 mA
IQ = 25 mA
–
Output saturation voltage VQSAT
–
0.5
0.6
10
–
0.24
–
V
Output leakage current
IQLEAK
–
μA
mA
Output current limitation IQLIMIT
30
56
70
internally limited and thermal
shutdown
Output fall time1)
Output rise time1)
Output jitter1)2)
Delay time1)3)
tf
0.17
0.4
–
0.4
0.5
0.35
15
1
μs
μs
μs
μs
μs
1.2 kΩ / 50 pF, see Figure 4
1.2 kΩ / 50 pF, see Figure 4
for square wave signal with 1 kHz
see Figure 4
tr
1
tQJ
td
1
12
–
30
150
Power-on time1)4)
tPON
80
VDD = 3 V, B ≤ BRP - 0.5 mT or
B ≥ BOP + 0.5 mT
Chopper frequency1)
fOSC
–
350
kHz
–
1) Not subject to production test, verified by design/characterization.
2) Output jitter is the 1 σ value of the output switching distribution.
3) Systematic delay between magnetic threshold reached and output switching.
4) Time from applying VDD = 3.0 V to the sensor until the output is valid.
Data Sheet
14
Revision 1.2, 2019-12-20
TLE4964-3M
Specification
Table 7
Magnetic characteristics
Symbol T (°C)
Parameter
Values
Unit
Note / Test
Condition
Min.
9.1
8.4
6.7
6.7
6.1
4.9
2.1
2.0
1.6
–
Typ. Max.
Operating point
Release point
Hysteresis
BOP
-40
25
13.5
12.5
10.3
10.2
9.5
17.8
16.6
13.9
13.8
12.9
10.8
4.6
mT
–
–
–
–
170
-40
25
BRP
mT
mT
μT
170
-40
25
7.8
BHYS
3.2
3.0
4.3
170
25
2.5
3.6
Effective noise value of the
magnetic switching points1)
BNeff
62
–
Temperaturecompensationof TC
–
–
-1200
–
ppm/K –
magnetic thresholds2)
1) The magnetic noise is normal distributed and can be assumed as nearly independent to frequency without sampling
noise or digital noise effects. The typical value represents the rms-value and corresponds therefore to a 1 σ
probability of normal distribution. Consequently a 3 σ value corresponds to 0.3% probability of appearance.
2) Not subject to production test, verified by design/characterization.
Field direction definition
Positive magnetic fields are defined with the south pole of the magnet to the branded side of package.
N
S
Branded Side
Figure 9
Definition of magnetic field direction PG-SOT23-3-15
Data Sheet
15
Revision 1.2, 2019-12-20
TLE4964-3M
Specification
3.5
Electro magnetic compatibility
Characterization of electro magnetic compatibility is carried out on a sample basis from one qualification lot.
Not all specification parameters have been monitored during EMC exposure.
+5V
Vs
Rs
RQ = 1.2kΩ
VDD
Q
CDD = 10nF
CQ = 10nF
GND
Figure 10 EMC test circuit
Ref: ISO 7637-2 (Version 2004), test circuit Figure 10 (with external resistor, RS = 100 Ω)
Table 8
Magnetic compatibility
Parameter
Testpulse 1
Symbol
Level / Type
Status
VEMC
-100 V
C
Testpulse 2a1)
Testpulse 2b
Testpulse 3a
Testpulse 3b
Testpulse 42)
Testpulse 5b3)
60 V/110 V
10 V
-150 V
100 V
-7 V / -5.5 V
US = 86.5 V / US* = 28.5 V
A/C
C
A
A
A
A
1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω).
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V ±0.2 V.
3) A central load dump protection of 42 V is used. Us* = 42 V - 13.5 V.
Data Sheet
16
Revision 1.2, 2019-12-20
TLE4964-3M
Specification
Ref: ISO 7637-2 (Version 2004), test circuit Figure 10 (without external resistor, RS = 0 Ω)
Table 9
Electro magnetic compatibility
Parameter
Testpulse 1
Symbol
Level / Type
Status
VEMC
-50 V
50 V
10 V
-150 V
100 V
-7 V / 5.5 V
US = 86.5 V / US* = 28.5 V
C
A
C
A
A
A
A
Testpulse 2a1)
Testpulse 2b
Testpulse 3a
Testpulse 3b
Testpulse 42)
Testpulse 5b3)
1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω).
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V ±0.2 V.
3) A central load dump protection of 42 V is used. Us* = 42 V - 13.5 V.
Data Sheet
17
Revision 1.2, 2019-12-20
TLE4964-3M
Package information
4
Package information
The TLE4964-3M is available in the small halogen-free SMD package PG-SOT23-3-15.
4.1
Package outline PG-SOT23-3-15
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0
.
0
8
.
.
.
0
C
.
1
5
0.95
0.
.
.
8
°
1.9
0.25 B C
M
M
0.2
A
1) Lead width can be 0.6 max. in dambar area
Figure 11 PG-SOT23-3-15 package outline (all dimensions in mm)
4.2
Packing information PG-SOT23-3-15
4
0.2
0.9
3.15
1.15
Pin 1
SOT23-TP V02
Figure 12 Packing of the PG-SOT23-3-15 in a tape
Data Sheet
18
Revision 1.2, 2019-12-20
TLE4964-3M
Package information
4.3
Footprint PG-SOT23-3-15
0.8
0.8
1.2
0.8
1.2
0.8
Reflow Soldering
Wave Soldering
Figure 13 Footprint PG-SOT23-3-15
4.4
PG-SOT23-3-15 distance between chip and package
Figure 14 Distance between chip and package
4.5
Package marking
Year (y) = 0...9
Month (m) = 1...9,
o - October
n - November
d - December
M43
Figure 15 Marking of TLE4964-3M
Data Sheet
19
Revision 1.2, 2019-12-20
TLE4964-3M
Graphs of the magnetic parameters
5
Graphs of the magnetic parameters
20
18
16
14
12
10
8
Typ
Min
Max
6
4
2
0
ꢀ50,00
0,00
50,00
TA[°C]
100,00
150,00
Figure 16 Operating point (BOP) of the TLE4964-3M over temperature
16
14
12
10
8
Typ
Min
Max
6
4
2
0
ꢀ50,00
0,00
50,00
TA[°C]
100,00
150,00
Figure 17 Release point (BRP) of the TLE4964-3M over temperature
5
4,5
4
3,5
3
Typ
Min
Max
2,5
2
1,5
1
0,5
0
ꢀ50,00
0,00
50,00
TA[°C]
100,00
150,00
Figure 18 Hysteresis (BHys) of the TLE4964-3M over temperature
Data Sheet 20
Revision 1.2, 2019-12-20
TLE4964-3M
Graphs of the electrical parameters
6
Graphs of the electrical parameters
80
75
70
65
60
55
50
3V
ꢀ50
ꢀ30
ꢀ10
10
30
50
70
90
110
130
150
Tꢀ[°C]
Figure 19 Power on time tPON of the TLE4964-3M over temperature
15,5
15
14,5
14
3V
12V
13,5
13
12,5
-50
-30
-10
10
30
50
T [°C]
70
90
110
130
150
Figure 20 Signal delay time of the TLE4964-3M over temperature
2
1,9
1,8
1,7
1,6
1,5
1,4
1,3
1,2
1,1
1
Vs=3V
Vs=12V
Vs=32V
Vs=42V
-50
-30
-10
10
30
50
70
90
110
130
150
T [°C]
Figure 21 Supply current of the TLE4964-3M over temperature
Data Sheet 21
Revision 1.2, 2019-12-20
TLE4964-3M
Graphs of the electrical parameters
2
1,9
1,8
1,7
1,6
1,5
1,4
1,3
1,2
1,1
1
-40°C
25°C
150°C
0
5
10
15
20
25
30
35
40
45
VS [V]
Figure 22 Supply current of the TLE4964-3M over supply voltage
63,0
62,0
61,0
60,0
59,0
58,0
57,0
56,0
55,0
54,0
5V
12V
32V
ꢀ50
ꢀ30
ꢀ10
10
30
50
70
90
110
130
150
T[°C]
Figure 23 Output current limit of the TLE4964-3M over temperature
63,0
62,0
61,0
60,0
59,0
58,0
57,0
56,0
55,0
54,0
ꢀ40°C
25°C
150°C
0
5
10
15
20
25
30
35
VQ [V]
Figure 24 Output current limit of the TLE4964-3M over applied pull-up voltage
Data Sheet
22
Revision 1.2, 2019-12-20
TLE4964-3M
Graphs of the electrical parameters
700
600
500
400
300
200
3V
12V
32V
100
-50 -30 -10
10
30
50
70
90
110 130 150
T [°C]
Figure 25 Output fall time of the TLE4964-3M over temperature
700
600
500
400
300
200
100
-40°C
25°C
150°C
0
5
10
15
20
25
30
35
VQ [V]
Figure 26 Output fall time of the TLE4964-3M over applied pull-up voltage
700
600
500
400
300
3V
12V
32V
-50 -30 -10
10
30
50
70
90
110 130 150
T [°C]
Figure 27 Output rise time of the TLE4964-3M over temperature
Data Sheet
23
Revision 1.2, 2019-12-20
TLE4964-3M
Graphs of the electrical parameters
700
600
500
400
300
200
100
-40°C
25°C
150°C
0
5
10
15
20
25
30
35
VQ [V]
Figure 28 Output rise time of the TLE4964-3M over applied pull-up voltage
10
1
0,1
32V
0,01
0,001
80
90
100
110
120
130
140
150
160
170
180
T [°C]
Figure 29 Output leakage current of the TLE4964-3M over temperature
400
350
300
250
200
150
100
50
10mA
15mA
20mA
25mA
0
-50
-30
-10
10
30
50
70
90
110
130
150
T [°C]
Figure 30 Saturation voltage of the TLE4964-3M over temperature
Data Sheet
24
Revision 1.2, 2019-12-20
TLE4964-3M
Graphs of the electrical parameters
400
350
300
250
200
150
100
50
-40°C
25°C
150°C
0
8
10
12
14
16
18
20
22
24
26
IQ [mA]
Figure 31 Saturation voltage of the TLE4964-3M over output current
120
110
100
90
80
70
12V
60
50
40
30
20
-50
-30
-10
10
30
50
70
90
110
130
150
T [°C]
Figure 32 Effective noise of the TLE4964-3M thresholds over temperature
0,8
0,7
0,6
0,5
0,4
0,2
0,1
0
12V
-50
-30
-10
10
30
50
70
90
110
130
150
T [°C]
Figure 33 Output signal jitter of the TLE4964-3M over temperature
Data Sheet
25
Revision 1.2, 2019-12-20
TLE4964-3M
Revision history
7
Revision history
Revision
Date
Changes
Revision 1.2 2019-12-20 Updated text and figure in Chapter 2.6
Updated standards in Table 4
Added maximum tested magnetic field in Chapter 3.3
Editorial changes
Revision 1.0 2012-12-18 Initial release
Data Sheet
26
Revision 1.2 2019-12-20
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
www.infineon.com
Edition 2019-12-20
Published by
Infineon Technologies AG
81726 Munich, Germany
Legal Disclaimer
The information given in this document shall in
no event be regarded as
Warnings
Due to technical requirements, components
may contain dangerous substances. For
information on the types in question, please
contact the nearest Infineon Technologies
Office. Infineon Technologies components may
be used in life-support devices or systems only
with the express written approval of Infineon
Technologies, if a failure of such components
can reasonably be expected to cause the failure
of that life-support device or system or to affect
the safety or effectiveness of that device or
system. Life support devices or systems are
intended to be implanted in the human body or
to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to
assume that the health of the user or other
persons may be endangered.
a guarantee of
conditions or characteristics. With respect to any
examples or hints given herein, any typical
values stated herein and/or any information
regarding the application of the device, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation, warranties of non-
infringement of intellectual property rights of
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Document reference
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