TLE4905G [INFINEON]
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications; 单向和双极霍尔IC开关用于磁场的应用
| 型号： | TLE4905G |
| 厂家： | 
Infineon |
| 描述： | Uni- and Bipolar Hall IC Switches for Magnetic Field Applications |
| 文件： | 总13页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Uni- and Bipolar Hall IC Switches for
Magnetic Field Applications
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Bipolar IC
Features
• Temperature compensated magnetic performance
• Digital output signal
• For unipolar and alternating magnetic fields
• Large temperature range
• Protection against reversed polarity
• Output protection against electrical disturbances
SOT-89
Type
Ordering Code
Q62705-K402
Q62705-K404
Q62705-K405
Q62705-K403
Package
SOT-89
SOT-89
SOT-89
SOT-89
▼ TLE 4905 G
▼ TLE 4935 G
▼ TLE 4935-2 G
▼ TLE 4945-2 G
▼ New type
TLE 4905/35/35-2/45-2 (Unipolar/Bipolar Magnetic Field Switches) have been designed
specifically for automotive and industrial applications. Reverse polarity protection is
included on-chip as is output protection against negative voltage transients.
Typical applications are position/proximity indicators, brushless DC motor commutation,
rotational indexing etc.
Semiconductor Group
1
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Pin Configuration
(top view)
Center of
sensitive area
2.25±0.2
1
2
3
AEP02150
Figure 1
Pin Definitions and Funtions
Pin No.
Symbol
VS
Function
1
2
3
Supply voltage
Ground
GND
Q
Output
Semiconductor Group
2
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Circuit Description
The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The
internal reference provides the supply voltage for the components. A magnetic field
perpendicular to the chip surface induces a voltage at the hall probe. This voltage is
amplified and switches a Schmitt-trigger with open-collector output. A protection diode
against reverse power supply is integrated.
The output is protected against electrical disturbances.
Threshold
Generator
1
3
VS
Q
Hall-
Generator
V
S
VRef
Schmitt-
Trigger
Amplifier
Output
Stage
2
AEB01243
GND
Figure 2 Block Diagram
Semiconductor Group
3
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Functional Description Unipolar Type TLE 4905 (figure 3 and 4)
When a positive magnetic field is applied in the indicated direction (figure 3) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When the magnetic field is reduced to a value smaller than the release
point, the output of the IC turns off (Release Point; figure 4).
+
Branded Side
Ι
S
VQ
N
+
-
AES01231
VS
Figure 3 Sensor/Magnetic-Field Configuration
B
BOP
Induction
BRP
0
t
VQ
VQH
Output Voltage
VQL
t
AED01420
Figure 4 Switching Characteristics Unipolar Type
Semiconductor Group
4
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Functional Description Bipolar Type TLE 4935/35-2/45-2 (figure 5 and 6)
When a positive magnetic field is applied in the indicated direction (figure 5) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). The output state does not change unless a reverse magnetic field
exceeding the turn-off magnetic induction |BRP| is exceeded. In this case the output will
turn off (Release Point; figure 6).
+
Branded Side
Ι
S
VQ
N
+
-
AES01231
VS
Figure 5 Sensor/Magnetic-Field Configuration
B
BOP
Induction
0
t
BRP
VQ
VQH
Output Voltage
VQL
t
AED01421
Figure 6 Switching Characteristics Bipolar Type
Semiconductor Group
5
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Absolute Maximum Ratings
Tj = – 40 to 125 °C
Parameter
Symbol
Limit Values Unit Remarks
min. max.
VS
Supply voltage
– 40 32
V
–
VS
Supply voltage
–
–
–
–
40
V
t < 400 ms; ν = 0.1
VQ
IQ
Output voltage
32
V
–
–
–
–
–
Output current
100
100
mA
mA
°C
°C
– IQ
Tj
Output reverse current
Junction temperature
Storage temperature
Thermal resistance
– 40 125
– 50 150
100
Tstg
Rth JA
K/W –
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Operating Range
Parameter
Symbol
Limit Values Unit Remarks
min. max.
Supply voltage
VS
Tj
4.0
18
V
–
–
Junction temperature
– 40 125
°C
Note: In the operating range the functions given in the circuit description are fulfilled.
Semiconductor Group
6
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
AC/DC Characteristics
4.0 V ≤ VS ≤ 18 V; – 40 °C ≤ Tj ≤ 125 °C
Parameter
Symbol
Limit Values
Unit Test Condition Test
Circuit
min. typ. max.
Supply current
ISHigh
ISLow
–
–
2.5
3.5
7
8
mA B < BRP
mA B > BOP
1
1
IQ = 40 mA
Output saturation VQSat
voltage
–
–
–
0.25 0.5
V
IQ = 40 mA
VQ = 18 V
1
1
1
Output leakage
current
IQL
–
–
10
1
µA
µs
Rise/fall time
tr / tf
RL = 1.2 kΩ
CL ≤ 33 pF
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25°C and
the given supply voltage.
Note: Moderate changes may occur during the development process or customer
discussion.
Semiconductor Group
7
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Magnetic Characteristics
4.0 V ≤ VS ≤ 18 V
Parameter
Symbol
Limit Values
TLE 4935 TLE 4935-2 TLE 4945-2
bipolar latch bipolar latch
Unit
TLE 4905
unipolar
bipolar
switch
min. max. min. max. min. max. min. max.
Junction Temperature Tj = – 40 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
7.5
5.5
2
19
17
6.5
10
20
15
27
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
– 20 – 10
– 27 – 15
∆BHY
20
40
20
30
14
54
26
Junction Temperature Tj = 25 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
7
5
2
18
16
6
10
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
– 20 – 10
– 26 – 14
∆BHY
20
40
20
28
13
52
26
Junction Temperature Tj = 85 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
6.5
4.5
2
17.5
15
10
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
– 20 – 10
– 26 – 13
∆BHY
5.5
20
40
26
52
Junction Temperature Tj = 125 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
6
4
2
17
14
5
10
20
12
25
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
– 20 – 10
20 40
– 25 – 12
24 50
∆BHY
Note: The listed characteristics are ensured over the operating range of the integrated circuit.
Typical characteristics specify mean values expected over the production spread. If not
otherwise specified, typical characteristics apply at Tj = 25°C and the given supply voltage.
Semiconductor Group
8
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
ΙS
1
V
VS
S
+
-
4.7 nF
CL
TLE
2
RL
GND
Q
4905/35/35-2/45-2
3
ΙQ
AES01244
Unipolar Type TLE 4905
Bipolar Type TLE 4935
VQ
VQ
VQH
VQH
VQL
VQL
0
BRP
BOP
B
BRP
0
BOP
B
BHY
BHY
AED01422
VQ
VQH
0.9VQH
0.1VQH
t
AED01246
t r
t f
Figure 7 Test Circuit 1
Semiconductor Group
9
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Mainframe
VS
Line
Sensor
VS
1
4.7 nF
4.7 nF
2
TLE
1.2 kΩ
GND
4905/35/35-2/45-2
3
Q
Signal
AES01247
Figure 8 Application Circuit
Semiconductor Group
10
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
If not otherwise specified, all curves reflect typical values at Tj = 25 °C and VS = 12 V.
Quiescent Current Difference
versus Temperature
Saturation Voltage versus
Output Current
AED01459
AED01461
1.0
1.2
∆Ι S
VQ
V
mA
_
_
18 V
<
<
4.0 V
VS
1.0
0.8
0.6
0.4
0.2
0
∆Ι S = ΙSLow - ΙSHigh
Ι Q = 40 mA
0.75
0.5
0.25
0
Tj = 125 ˚C
Tj = -40 ˚C
-40
0
50
100
150
200
˚C
Tj
0
20
40
60
100
mA
Ι Q
Quiescent Current versus
Junction Temperature
TLE 4905 Operate-and Release-Point
versus Junction Temperature
AED01249
AED01424
8
25
Ι S
_
<
_
<
18 V
4.0 V
VS
mT
20
mA
B
V
Q = High
6
4
2
0
BOPmax
15
10
5
BRPmax
BOPtyp
BRPtyp
VS = 18 V
VS = 4.0 V
BOPmin
BRPmin
0
-50
0
50
100
C
200
-40
0
50
100
˚C
200
Tj
Tj
Semiconductor Group
11
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
TLE 4935 Operate-and Release-Point
versus Junction Temperature
TLE 4935-2 Operate-and Release-Point
versus Junction Temperature
AED01640
AED01423
30
30
_
<
_
18 V
<
4.0 V
VS
B
_
<
_
18 V
<
4.0 V
VS
mT
20
BOPmax
mT
20
B
BOPmax
BOPtyp
BOPmin
BOPtyp
BOPmin
10
0
10
0
-10
-20
-30
BRPmax
BRPtyp
BRPmax
-10
BRPtyp
BRPmin
˚C
BRPmin
-20
-40
0
50
100
200
-40
0
50
100
˚C
200
Tj
Tj
TLE 4905 Hysteresis versus Junction
Temperature
TLE 4945-2 Operate-and Release-Point
versus Junction Temperature
AED01426
AED02353
8
18
B
_
<
_
<
_
_
<
<
4.0 V VS 18 V
4.0 V
18 V
VS
mT
12
B
mT
6
BOPmax
6
0
BHYmax
BRPmax
BOPtyp
4
2
0
BRPtyp
BOPmin
BHYtyp
-6
BRPmin
BHYmin
-12
-18
-40
0
50
100
˚C
200
-40
0
50
100
˚C
200
Tj
Tj
Semiconductor Group
12
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Package Outline
SOT-89 (SMD)
(Plastic Small Outline Transistor Package)
4.5
1.5
45˚
+0.2
0.2 max1)
0.25
1.6
acc. to
DIN 6784
0.65 max
1.5
0.25 min
3
1)
Ejector pin marking possible
Package Information
d: Distance chip to upper side of IC
SOT-89: 1.05 mm
d
AEA02487
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Dimensions in mm
SMD = Surface Mounted Device
Semiconductor Group
13
1998-04-29
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