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T430N12TOF [INFINEON]

Silicon Controlled Rectifier, 970A I(T)RMS, 433000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,;

T430N12TOF


元器件型号：	T430N12TOF
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Silicon Controlled Rectifier, 970A I(T)RMS, 433000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 栅栅极
PDF文件：	总10页 (文件大小：240K)
下载文档：	下载PDF数据表文档文件
型号参数：T430N12TOF参数

T430N12TOFXPSA1

Silicon Controlled Rectifier, 970A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,

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0 INFINEON

T430N14TOF

Silicon Controlled Rectifier, 970A I(T)RMS, 433000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,

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1 INFINEON

T430N14TOFXPSA1

Silicon Controlled Rectifier, 970A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

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0 INFINEON

T430N16TOF

Silicon Controlled Rectifier, 970A I(T)RMS, 433000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element

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1 INFINEON

T430N16TOFXPSA1

Silicon Controlled Rectifier, 970A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,

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0 INFINEON

T4312816A

8M x 16 SDRAM

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915 TMT

T4312816A-10S

8M x 16 SDRAM

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49 TMT

T4312816A-6S

8M x 16 SDRAM

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25 TMT

T4312816A-7.5S

8M x 16 SDRAM

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37 TMT

T4312816A-7S

8M x 16 SDRAM

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25 TMT

T4312816A-8S

8M x 16 SDRAM

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24 TMT

T4312816B

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

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23 TMT

T4312816B-6S

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

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19 TMT

T4312816B-6SG

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

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29 TMT

T4312816B-7S

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

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23 TMT

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