ST203S10PEJ2LPBF [INFINEON]
Silicon Controlled Rectifier, 320A I(T)RMS, 205000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB;
| 型号： | ST203S10PEJ2LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 320A I(T)RMS, 205000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB |
| 文件： | 总9页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25247 10/06
ST203SPbF SERIES
Stud Version
INVERTER GRADE THYRISTORS
Features
205A
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
Lead Free
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST203S
205
Units
A
@ TC
85
°C
IT(RMS)
ITSM
320
5260
A
A
@50Hz
@ 60Hz
@50Hz
@ 60Hz
5510
A
I2t
138
KA2s
KA2s
V
126
VDRM/VRRM
1000 to 1200
20 to 30
- 40 to 125
case style
TO-209AB (TO-93)
t
range
µs
q
TJ
°C
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1
ST203SPbF Series
Bulletin I25247 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Typenumber
ST203S
repetitivepeakvoltage
V
non-repetitivepeakvoltage
V
10
12
1000
1200
1100
1300
40
CurrentCarryingCapability
ITM
ITM
ITM
Frequency
Units
180oel
900
940
930
780
50
100μs
6180
2980
1730
890
50
180oel
50Hz
400Hz
580
570
400
380
640
650
4680
2150
1000Hz
520
370
50
320
210
50
630
510
50
1200
580
50
A
V
2500Hz
RecoveryvoltageVr
Voltage before turn-on Vd
VDRM
V DRM
V DRM
Rise of on-state current di/dt
Case temperature
50
60
50
85
-
-
-
-
A/μs
60
85
60
85
°C
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-stateConduction
Parameter
ST203S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
205
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
320
DC @ 76°C case temperature
ITSM
Max. peak, one half cycle,
non-repetitive surge current
5260
5510
4420
4630
138
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
A
reapplied
100% VRRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage Initial TJ = TJ max
reapplied
126
KA2s
98
100% VRRM
89
reapplied
I2√t
Maximum I2√t for fusing
1380
KA2√s t = 0.1 to 10ms, no voltage reapplied
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2
ST203SPbF Series
Bulletin I25247 10/06
On-stateConduction
Parameter
ST203S
1.72
Units Conditions
VTM
Max. peak on-state voltage
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.17
1.20
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
(I > π x I
), TJ = TJ max.
T(AV)
r 1
t
Low level value of forward
slope resistance
0.92
0.87
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x I ), TJ = TJ max.
mΩ
r 2
t
High level value of forward
slope resistance
T(AV)
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST203S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
A/µs
ITM = 2 x di/dt
TJ = 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.79
d
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
µs
Min Max
t
Max. turn-off time
20
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST203S
500
Units Conditions
dv/dt
Maximum critical rate of rise of
off-state voltage
TJ = TJ max., linear to 80% VDRM, higher value
V/μs
available on request
IRRM
IDRM
Max. peak reverse and off-state
leakage current
40
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST203S
60
Units Conditions
PGM
W
A
TJ = TJ max, f = 50Hz, d% = 50
10
10
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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3
ST203SPbF Series
Bulletin I25247 10/06
ThermalandMechanicalSpecifications
Parameter
ST203S
Units
°C
Conditions
TJ
T
Max. junction operating temperature range -40 to 125
Max. storage temperature range
-40 to 150
0.105
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
DC operation
K/W
0.04
Mounting surface, smooth, flat and greased
T
Mounting torque, ± 10%
31
Nm
Non lubricated threads
Lubricated threads
(275)
(Ibf-in)
24.5
Nm
(210)
(Ibf-in)
wt
Approximate weight
Case style
280
g
TO-209AB(TO-93)
See Outline Table
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conductionangle Sinusoidalconduction Rectangularconduction Units
Conditions
180°
120°
90°
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
TJ = TJ max.
60°
30°
OrderingInformationTable
Device Code
ST 20
3
S
12
P
F
J
0
PbF
2
1
3
7
4
6
5
8
9
10
11
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn off
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16/ x 1.5
7
8
9
-
-
-
Reapplied dv/dt code (for t test condition)
q
dv/dt - tq combinations available
t code
q
dv/dt(V/µs) 20
50
100 200 400
0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
Criticaldv/dt:
20
25
30
CK
CJ
CH
DK
DJ
DH
EK
EJ
EH
--
FJ *
FH
--
--
HH
t (µs)
q
*Standard part number.
All other types available only on request.
-
-
10
11
None = 500V/µsec(Standardvalue)
L
= 1000V/µsec (Special selection)
LeadFree
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4
ST203SPbF Series
Bulletin I25247 10/06
OutlineTable
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
Fast-on Terminals
2
C.S. 0.4mm
(0.0006 s.i.)
AMP. 280000-1
REF-250
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
27.5 (1.08) MAX. DIA.
SW 32
CaseStyleTO-209AB(TO-93)
3/4"-16UNF-2A *
All dimensions in millimeters (inches)
35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
SW 32
CaseStyleTO-209AB(TO-93)Flag
All dimensions in millimeters (inches)
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
ST203SPbF Series
Bulletin I25247 10/06
130
130
120
110
100
90
ST2 0 3S Se ri e s
(DC) = 0.105 K/W
ST203S Se rie s
R
R
(DC) = 0.105 K/W
thJC
thJC
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
90°
30°
120°
60°
80
180°
90°
120°
180°
DC
80
70
0
40
80
120 160 200 240
0
50 100 150 200 250 300 350
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
350
180°
t
h
S
A
120°
90°
60°
30°
300
250
200
150
100
50
0
.
3
K
/
W
W
RM S Lim it
0
.
5
K
/
Conduction Angle
ST20 3 S Se rie s
T = 125°C
J
0
0
40
80
120 160 200
2
2
4
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
t
h
S
A
0
.
1
K
/
W
RM S Lim it
Conduction Period
ST203SSeries
0
.
5
K
/
W
T = 125°C
J
0
0
50 100 150 200 250 300
Average On-state Current (A)
3
2
5
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-state Power Loss Characteristics
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ST203SPbF Series
Bulletin I25247 10/06
5000
4500
4000
3500
3000
5500
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
5000
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
4500
No Voltage Reapplied
Rated V
Reapplied
RRM
4000
3500
3000
2500 ST2 03 S Se rie s
2500 ST203SSeries
2000
1
2000
0.01
10
100
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
10000
1
St e a d y St a t e V a l u e
= 0.105 K/W
ST20 3S Se ri e s
R
thJC
(DC Operation)
0.1
0.01
1000
T = 2 5° C
J
ST2 03S Se r ie s
T = 125°C
J
0.001
100
0.001
0.01
0.1
1
10
1
1.5
2
2.5
3
3.5
4
Square Wave Pulse Duration (s)
InstantaneousOn-state Voltage (V)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
250
200
150
100
50
160
140
120
100
80
I
= 500 A
TM
I
= 500 A
300 A
200 A
100 A
50 A
TM
ST203SSeries
300 A
200 A
T = 125 °C
J
100 A
60
50 A
40
ST203SSeries
20
T = 125 °C
J
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
Rate Of Fall Of On-state Current - di/dt (A/ µs)
Fig. 10 - Reverse Recovery Current Characteristics
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ST203SPbF Series
Bulletin I25247 10/06
1E4
Snubber circuit
Snubber circuit
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
s
s
s
s
D
D
DRM
DRM
400
500
200
100
50 Hz
1000
1500
2500
200
400
100
500
50 Hz
1000
1500
2500
3000
5000
1E3
3000
5000
ST203SSe rie s
Sinusoidal pulse
ST2 0 3S Se rie s
Sinusoidal pulse
T
= 85°C
T
= 60°C
tp
tp
C
C
1E2
1E1
1E1
1E4
1E2
1E3
1E4
1E2
1E3
Pulse Ba sew id t h (µs)
Pulse Ba sew id t h (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
Snubbercircuit
Snubber circuit
R
C
V
= 47 o hms
= 0.22 µF
= 80%V
s
s
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
s
s
D
DRM
D
DRM
50 Hz
100
200
400
200
400
100
50 Hz
500
1000
500
1500
2500
1000
1500
2500
3000
ST203SSeries
Trapezoidal pulse
= 60 ° C
di/dt = 50A/µs
ST2 0 3S Se r ie s
Trapezoidal pulse
T = 8 5° C
C
3000
5000
T
C
5000
di/dt = 50A/µs
1E4 1E1
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba se w id t h ( µs)
Fig. 12 - Frequency Characteristics
Snubber circuit
1E4
1E3
1E2
Snubbercircuit
ST203SSe rie s
Trapezoidal pulse
= 8 5° C
R
C
V
= 47 o hm s
= 0.22 µF
= 80%V
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
s
s
T
C
s
s
tp
D
di/ d t = 100A/ µs
D
DRM
DRM
50 Hz
100
200
400
50 Hz
100
500
200
400
1000
500
1000
1500
1500
2500
3000
ST203SSeries
Trapezoidal pulse
2500
T
= 60° C
C
3000
tp
di/dt = 100A/ µs
1E1
1E4
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba sewid t h (µs)
Fig. 13 - Frequency Characteristics
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ST203SPbF Series
Bulletin I25247 10/06
1E5
1E4
1E3
1E2
1E1
ST203 S Se rie s
Rectangular pulse
tp
di/dt = 50A/µs
20 joulesper pulse
20 joulesper pulse
7.5
4
10
2
5
1
2
0.4
1
0.2
0.1
0.5
0.3
0.2
0.1
ST203SSeries
Sinusoidal pulse
tp
1E1
1E2
1E3
1E141E1
1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba sew id t h (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(a)
(b)
(2) (3) (4)
(1)
VGD
IGD
Device: ST203SSeries
0.1
Frequency Limited by PG(AV)
10 100
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 15 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10 /06
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9
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