ST180S04P0 [INFINEON]
PHASE CONTROL THYRISTORS; 相位控制晶闸管
| 型号： | ST180S04P0 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS |
| 文件： | 总8页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25165 rev. C 03/03
ST180S SERIES
Stud Version
PHASE CONTROL THYRISTORS
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
200A
International standard case TO-209AB (TO-93)
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
ST180S
Units
200
85
A
°C
A
@ TC
IT(RMS)
ITSM
314
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5000
A
5230
A
I2t
125
KA2s
KA2s
V
114
VDRM/VRRM
400 to 2000
100
case style
TO-209AB (TO-93)
t
typical
µs
°C
q
TJ
- 40 to 125
1
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ST180S Series
Bulletin I25165 rev. C 03/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number Code
peak and off-state voltage
V
repetitive peak voltage
V
@ TJ = TJ max
mA
04
08
400
800
500
900
12
16
20
1200
1600
2000
1300
1700
2100
ST180S
30
On-state Conduction
Parameter
ST180S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
200
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
314
5000
5230
4200
4400
125
A
DC @ 76°C case temperature
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
114
KA2s
88
81
I2√t
Maximum I2√t for fusing
1250
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
1.08
1.14
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
1.18
1.14
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.75
600
V
I = 570A, TJ = 125°C, t = 10ms sine pulse
pk p
Maximum holding current
Max. (typical) latching current
mA
TJ = TJ max, anode supply 12V resistive load
IL
1000 (300)
Switching
Parameter
ST180S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1.0
d
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
t
100
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST180S Series
Bulletin I25165 rev. C 03/03
Blocking
Parameter
ST180S
500
Units Conditions
V/µs TJ = TJ max linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM
IRRM
Max. peak reverse and off-state
leakage current
30
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST180S
Units Conditions
PGM
10
2.0
3.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
IGT
DC gate current required
to trigger
TJ = - 40°C
TJ = 25°C
180
90
-
150
-
mA
V
Max. required gate trigger/ cur-
40
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT
DC gate voltage required
to trigger
2.9
1.8
1.2
-
3.0
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST180S
-40 to 125
Units Conditions
°C
TJ
T
Max.operatingtemperaturerange
Max. storagetemperaturerange
-40 to 150
stg
RthJC Max. thermalresistance,
0.105
DC operation
K/W
junction to case
RthCS Max. thermalresistance,
0.04
Mounting surface, smooth, flat and greased
case to heatsink
T
Mountingtorque,±10%
31
Non lubricated threads
(275)
24.5
(210)
280
Nm
(lbf-in)
Lubricated threads
wt
Approximateweight
Casestyle
g
TO-209AB(TO-93)
SeeOutlineTable
3
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ST180S Series
Bulletin I25165 rev. C 03/03
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.015
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
60°
30°
Ordering Information Table
Device Code
ST 18
0
S
20
P
0
7
1
2
5
8
3
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
P = Stud base 3/4"-16UNF2A threads
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
V = Glass-metal seal (only up to 1200V)
8
-
None = Ceramic housing (over 1200V)
NOTE: For Metric device M16 x 1.5 Contact factory
4
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ST180S Series
Bulletin I25165 rev. C 03/03
Outline Table
GLASS METAL SEAL
19 (0.75) MAX.
8.5 (0.33) DIA.
4 (0.16) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
Fast-on Terminals
2
C.S. 0.4mm
(0.0006 s.i.)
AMP. 280000-1
REF-250
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
28.5 (1.12) MAX. DIA.
SW 32
3/4"-16UNF-2A *
35 (1.38) MAX.
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
2
C.S. 0.4mm
(0.0006 s.i.)
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
27.5 (1.08) MAX. DIA.
SW 32
3/4"-16UNF-2A *
35 (1.38) MAX.
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
5
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ST180S Series
Bulletin I25165 rev. C 03/03
130
120
110
100
90
130
ST180S Se r ie s
(DC) = 0.105 K/ W
ST180SSeries
R
R
(DC) = 0.105 K/W
thJC
thJC
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
90°
30°
120°
60°
90°
80
180°
120°
DC
180°
70
80
0
50 100 150 200 250 300 350
Average On-state Current (A)
0
40
80
120 160 200 240
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
R
180°
t
h
S
120°
A
0
300
90°
.
=
1
6
0
K
.
0
/
W
8
60°
K
0
/
.
2
W
250
30°
K
/
-
W
D
0
.
3
e
l
K
t
/
a
W
W
RM S Lim it
R
200
150
100
50
0
.
4
K
/
Conduction Angle
ST180 S Se rie s
T = 125°C
J
0
0
40
80
120 160 200
2
4
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
0
.
1
K
/
W
0
.
2
K
/
W
RM S Lim it
Conduction Period
ST180SSeries
T = 125°C
J
0
0
40 80 120 160 200 240 280 3
2
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST180S Series
Bulletin I25165 rev. C 03/03
4800
4400
4000
3600
3200
2800
2400
2000
5500
5000
4500
4000
3500
3000
2500
2000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST180SSeries
ST180SSeries
1
10
100
0.01
0.1
Pulse Tra in Dura t io n (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
T = 125°C
J
1000
ST180SSeries
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
InstantaneousOn-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
0.1
St e a d y St a t e V a l u e
= 0.105 K/W
R
thJC
(DC Operation)
0.01
ST180SSeries
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
7
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ST180S Series
Bulletin I25165 rev. C 03/03
100
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(a)
10
1
(b)
(1) (2) (3) (4)
VGD
IGD
Device: ST180SSeries
0.1
Frequency Limited by PG(AV)
0.1
0.001
0.01
1
10
100
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
8
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INFINEON
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