SPW55N80C3 [INFINEON]
CoolMOS™ P7替代CoolMOS™ C3 。;
| 型号： | SPW55N80C3 |
| 厂家： | 
Infineon |
| 描述： | CoolMOS™ P7替代CoolMOS™ C3 。 |
| 文件： | 总15页 (文件大小：1230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C3 800V
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
Data Sheet
Rev. 2.0
Final
Industrial & Multimarket
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
TO-247
1
Description
800V CoolMOS™ C3 designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Features
New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
drain
pin 2
• Ultra low effective capacitances
Applications
gate
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom, UPS and Solar.
pin 1
source
pin 3
Table 1 Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
Unit
850
V
0.085
288
Â
nC
A
ID,pulse
150
Eoss @ 400V
Body diode di/dt
21.5
100
µJ
A/µs
Type / Ordering Code
SPW55N80C3
Package
Marking
Related Links
PG-TO 247
55N80C3
see Appendix A
Final Data Sheet
Rev. 2.0, 2011-10-12
2
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
Rev. 2.0, 2011-10-12
3
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
2
Maximum ratings
at TÎ = 25°C, unless otherwise specified
Table 2 Maximum ratings
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
54.9
Continuous drain current1)
I ‡
A
T† = 25°C
T† = 100°C
T† = 25°C
34.7
150
Pulsed drain current2)
I ‡‚ÔÛÐÙþ
Eƒ»
A
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
2150 mJ I‡ = 9.5A, V‡‡ = 50V
3.26 mJ I‡ = 9.5A, V‡‡ = 50V
Eƒ¸
I ƒ¸
9.5
50
20
30
A
dv/dt
V•»
V/ns V‡» = 0 ... 400V
-20
-30
V
static
AC (f > 1 Hz)
Power dissipation (non FullPAK)
TO-247
PÚÓÚ
500.0 W
T† = 25°C
Operating and storage temperature
T΂TÙÚÃ
-55
150
60
°C
Ncm M3 and M3.5 screws
Mounting torque (non FullPAK)
TO-247
Continuous diode forward current
Diode pulse current
I »
47.6
150
4
A
T† = 25°C
T† = 25°C
I »‚ÔÛÐÙþ
dv/dt
diË/dt
A
Reverse diode dv/dt3)
V/ns
A/µs
V‡» = 0 ... 400V, I»‡ ù I‡,
TÎ = 25°C
Maximum diode commutation speed
100
1) Limited by TÎ ÑÈà. Maximum duty cycle D=0.75
2) Pulse width tÔ limited by TÎ ÑÈà
3) VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low and high side switch with same Rg
Final Data Sheet
Rev. 2.0, 2011-10-12
4
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
3
Thermal characteristics
Table 3 Thermal characteristics TO-247
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
0.25 °C/W
62
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Final Data Sheet
Rev. 2.0, 2011-10-12
5
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
4
Electrical characteristics
at TÎ = 25°C, unless otherwise specified
Table 4 Static characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Vñ…¸ò‡»» 800
V
V•» = 0V, I‡ = 0.25mA
V•»ñÚÌò
I ‡»»
2.1
3
3.9
25
V
V‡» = V•», I‡ = 3.3mA
Zero gate voltage drain current
µA
V‡» = 800V, V•» = 0V, TÎ = 25°C
V‡» = 800V, V•» = 0V,
TÎ = 150°C
150
Gate-source leakage current
I •»»
100
nA
V•» = 20V, V‡» = 0V
Drain-source on-state resistance
R‡»ñÓÒò
0.077 0.085 Â
0.199
V•» = 10V, I‡ = 32.6A, TÎ = 25°C
V•» = 10V, I‡ = 32.6A,
TÎ = 150°C
Gate resistance
R•
0.8
Â
f = 1MHz, open drain
Table 5 Dynamic characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Input capacitance
CÍÙÙ
7520
305
pF
pF
V•» = 0V, V‡» = 100V, f = 1MHz
Output capacitance
CÓÙÙ
Effective output capacitance, energy
related1)
CÓñþØò
1535
277
pF
pF
V•» = 0V, V‡» = 0 ... 400V
I‡ = constant, V•» = 0V,
V‡» = 0 ... 400V
Effective output capacitance, time related2) CÓñÚØò
Turn-on delay time
Rise time
tÁñÓÒò
tØ
45
21
200
9
ns
ns
ns
ns
V‡‡ = 400V, V•» = 13V,
I‡ = 54.9A, R• = 3.4Â
Turn-off delay time
Fall time
tÁñÓËËò
tË
Table 6 Gate charge characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
QÃÙ
42
nC
nC
nC
V
V‡‡ = 480V, I‡ = 54.9A,
V•» = 0 to 10V
QÃÁ
125
288
5.5
QÃ
Gate plateau voltage
VÔÐÈÚþÈÛ
1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.0, 2011-10-12
6
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
Table 7 Reverse diode characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
0.95
Diode forward voltage
V»‡
tØØ
V
V•» = 0V, IŒ = 54.9A, TÎ = 25°C
Reverse recovery time
1050
43
ns
µC
A
V¸ = 400V, IŒ = 54.9A,
diŒ/dt = 100A/µs
Reverse recovery charge
Peak reverse recovery current
QØØ
I ØØÑ
78
Final Data Sheet
Rev. 2.0, 2011-10-12
7
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
5
Electrical characteristics diagrams
Table 8
Power dissipation
Safe operating area
600
103
1 µs
500
400
300
102
10 µs
100 µs
101
1 ms
10 ms
I
I
I
I
P
P
P
P
100
10-1
10-2
DC
200
100
0
0
40
80
TC [°C]
120
160
100
101
102
103
VDS [V]
Ptot=f(TC)
ID=f(VDS); VGS>7V; TC=25 °C; D=0; parameter: tp
Table 9
Safe operating area
Max. transient thermal impedance
103
100
1 µs
102
101
10 µs
100 µs
1 ms
10 ms
DC
0.5
10-1
0.2
0.1
I
I
I
I
0.05
100
10-1
10-2
Z
Z
Z
Z
0.02
10-2
0.01
single pulse
10-3
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
ID=f(VDS);VGS>7V; TC=80 °C; D=0; parameter: tp
Final Data Sheet
ZthJC =f(tP); parameter: D=tp/T
Rev. 2.0, 2011-10-12
8
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
Table 10
Typ. output characteristics
Typ. output characteristics
200
120
20 V
20 V
180
10 V
10 V
100
8 V
8 V
160
7 V
140
6 V
7 V
80
60
40
20
0
6 V
5.5 V
5 V
120
5.5 V
5 V
100
I
I
I
I
II
II
4.5 V
4.5 V
80
60
40
20
0
0
5
10
VDS [V]
15
20
0
5
10
VDS [V]
15
20
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 11
Typ. drain-source on-state resistance
Drain-source on-state resistance
1.00
0.25
0.90
0.80
0.70
0.60
0.50
0.20
0.15
98%
typ
R
R
R
R
RR
RR
0.40
0.30
0.20
0.10
0.00
0.10
0.05
0.00
5 V
5.5 V
6 V
6.5 V 7 V
10 V
0
20
40
60
ID [A]
80
100
120
-60
-20
20
60
Tj [°C]
100
140
180
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=32.6 A; VGS=10 V
Final Data Sheet
Rev. 2.0, 2011-10-12
9
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
Table 12
Typ. transfer characteristics
Typ. gate charge
180
10
25 °C
9
160
140
120
100
120 V
480 V
8
7
6
5
4
3
2
1
0
150 °C
I
I
I
I
80
60
40
20
0
V
V
V
V
0
2
4
6
8
10
0
50
100
150
Qgate [nC]
200
250
300
VGS [V]
ID=f(VGS); |VDS|=20V;
VGS=f(Qgate); ID=54.9 A pulsed; parameter: VDD
Table 13
Forward characteristics of reverse diode
Avalanche energy
102
2500
2000
1500
101
125 °C
25 °C
I
I
I
I
E
E
E
E
1000
500
0
100
10-1
0.0
0.5
1.0
1.5
0
50
100
Tj [°C]
150
200
VSD [V]
IF=f(VSD); parameter: Tj
EAS=f(Tj); ID=9.5 A; VDD=50 V
Final Data Sheet
Rev. 2.0, 2011-10-12
10
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
Table 14
Drain-source breakdown voltage
Typ. capacitances
980
960
940
920
900
880
860
840
820
800
780
760
740
720
105
Ciss
104
103
Coss
C
C
C
C
102
101
100
V
V
V
V
Crss
700
680
660
640
620
600
580
560
540
-60
-20
20
60
Tj [°C]
100
140
180
0
100
200
300
VDS [V]
400
500
600
VBR(DSS)=f(Tj); ID=0.25 mA
C=f(VDS); VGS=0 V; f=1 MHz
Table 15
Typ. Coss stored energy
40
35
30
25
20
E
E
E
E
15
10
5
0
0
100
200
300
VDS [V]
400
500
600
Eoss=f(VDS
)
Final Data Sheet
Rev. 2.0, 2011-10-12
11
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
6
Test Circuits
Table 16 Diode_characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
RG1
VDS
RG2
RG1 = RG2
Table 17 Switching_times
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Table 18 Unclamped_inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Final Data Sheet
Rev. 2.0, 2011-10-12
12
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
7
Package Outlines
Figure 1 Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2011-10-12
13
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
8
Appendix A
Table 19 Related Links
IFX CoolMOS Webpage:
•
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
IFX Design Tools:
•
http://www.infineon.com/cms/en/product/promopages/designtools/index.html
Final Data Sheet
Rev. 2.0, 2011-10-12
14
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
Revision History
SPW55N80C3
Revision: 2011-10-12, Rev. 2.2
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
release of final datasheet
2011-09-26
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Edition 2011-08-01
Published by
Infineon Technologies AG
81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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).
www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies,
if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2.0, 2011-10-12
15
相关型号：
SPW55N80C3FKSA1
Power Field-Effect Transistor, 800V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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