SPP80N06S2-H5 [INFINEON]
OptiMOS Power-Transistor; 的OptiMOS功率三极管
| 型号： | SPP80N06S2-H5 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS Power-Transistor |
| 文件： | 总8页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP80N06S2-H5
SPB80N06S2-H5
OptiMOS Power-Transistor
Product Summary
Feature
V
55
5.5
80
V
DS
• N-Channel
R
mΩ
A
DS(on)
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
I
D
P- TO263 -3-2
P- TO220 -3-1
• dv/dt rated
Type
Package
Ordering Code
Marking
2N06H5
2N06H5
SPP80N06S2-H5
P- TO220 -3-1 Q67060-S6052
P- TO263 -3-2 Q67060-S6053
SPB80N06S2-H5
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
1)
A
Continuous drain current
I
D
T =25°C
C
80
80
320
Pulsed drain current
I
D puls
T =25°C
C
700
mJ
Avalanche energy, single pulse
E
AS
I =80 A , V =25V, R =25Ω
D
DD
GS
2)
E
30
6
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
AR
jmax
dv/dt
kV/µs
I =80A, V =44V, di/dt=200A/µs, T =175°C
jmax
S
DS
Gate source voltage
Power dissipation
V
V
±20
300
GS
P
W
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
j
stg
Page 1
2003-05-09
SPP80N06S2-H5
SPB80N06S2-H5
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
R
-
-
0.34
-
0.5 K/W
62
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
R
thJA
-
-
-
-
62
40
2
3)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
55
typ. max.
Static Characteristics
V
-
-
V
Drain-source breakdown voltage
(BR)DSS
V
=0V, I =1mA
D
GS
2.1
3
4
Gate threshold voltage, V = V
V
GS(th)
GS
DS
I =230µA
D
µA
Zero gate voltage drain current
I
DSS
V
V
=55V, V =0V, T =25°C
-
-
0.01
1
1
DS
DS
GS
j
=55V, V =0V, T =125°C
100
GS
j
-
1
100 nA
Gate-source leakage current
I
GSS
V
=20V, V =0V
DS
GS
-
4.6
5.5
Drain-source on-state resistance
R
mΩ
DS(on)
V
=10V, I =80A
D
GS
1
Current limited by bondwire ; with an R
= 0.5K/W the chip is able to carry I = 156A at 25°C, for detailed
D
thJC
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-09
SPP80N06S2-H5
SPB80N06S2-H5
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
g
V
≥2*I *R ,
DS(on)max
60
119
-
S
fs
DS
D
I =80A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
-
-
-
-
-
-
-
4400 5500 pF
1100 1460
iss
GS
DS
C
C
f=1MHz
oss
rss
280
23
420
34 ns
35
t
V
=30V, V =10V,
d(on)
DD GS
I =80A,
t
r
23
D
R =2.4Ω
G
Turn-off delay time
Fall time
t
48
72
d(off)
t
22
33
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
V
=44V, I =80A
-
-
-
23
48
31 nC
72
gs
DD
D
Q
gd
V
DD
=44V, I =80A,
116
155
Gate charge total
Q
g
D
V
=0 to 10V
GS
V
=44V, I =80A
-
-
5.1
-
-
V
A
Gate plateau voltage
V
I
DD
D
(plateau)
Reverse Diode
T =25°C
80
Inverse diode continuous
forward current
C
S
I
-
-
-
-
-
320
1.3
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
SM
V
=0V, I =80A
0.9
60
V
V
GS
F
SD
t
rr
V =30V, I =l ,
R
75 ns
F S
di /dt=100A/µs
Reverse recovery charge
Q
130
163 nC
F
rr
Page 3
2003-05-09
SPP80N06S2-H5
SPB80N06S2-H5
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
D
C
C
parameter: V ≥ 6 V
parameter: V ≥ 10 V
GS
SPP80N06S2-H5
GS
SPP80N06S2-H5
90
320
A
W
70
60
50
40
30
20
10
0
240
200
160
120
80
40
0
°C
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160 °C 190
T
T
C
C
3 Safe operating area
4 Max. transient thermal impedance
Z = f (t )
thJC
I = f ( V
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
p
C
1
3 SPP80N06S2-H5
SPP80N06S2-H5
10
10
K/W
t
= 10.0µs
A
p
0
10
10
10
10
10
2
10
100 µs
1 ms
-1
-2
-3
-4
D = 0.50
0.20
1
10
0.10
0.05
0.02
single pulse
0.01
0
10
10 -1
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
t
V
p
DS
Page 4
2003-05-09
SPP80N06S2-H5
SPB80N06S2-H5
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS(on)
D
DS
j
parameter: t = 80 µs
parameter: V
GS
p
SPP80N06S2-H5
SPP80N06S2-H5
190
18
mΩ
Ptot = 300W
A
i
d
e
g
f
e
h
V
[V]
GS
160
140
120
100
80
a
b
c
d
e
f
4.5
5.0
5.5
5.8
6.0
6.5
7.0
8.0
10.0
d
14
12
10
8
f
c
g
h
i
g
h
6
60
i
b
4
40
V
[V] =
e
5.8 6.0 6.5
GS
d
2
20
f
g
h
i
a
7.0 8.0 10.0
0
0
V
A
D
0
1
2
3
4
5
6.5
0
20
40
60
80 100 120 140
170
I
V
DS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I = f ( V ); V ≥ 2 x I x R
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
D
fs
j
parameter: t = 80 µs
parameter: g
p
fs
180
160
S
A
140
120
100
80
120
100
80
60
40
20
0
60
40
20
0
0
1
2
3
4
5
7
0
20 40 60 80 100 120 140 160
200
V
A
V
I
GS
D
Page 5
2003-05-09
SPP80N06S2-H5
SPB80N06S2-H5
9 Drain-source on-state resistance
= f (T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 80 A, V = 10 V
parameter: V = V
DS
D
GS
GS
SPP80N06S2-H5
4
18
mΩ
V
14
12
10
8
3
2.5
2
1.15mA
230µA
98%
1.5
1
6
typ
4
0.5
2
0
-60
0
-60
°C
-20
20
60
100
140
200
-20
20
60
100
180
°C
T
T
j
j
11 Typ. capacitances
12 Forward character. of reverse diode
I = f (V )
C = f (V )
F
SD
DS
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
5
3 SPP80N06S2-H5
10
10
pF
A
4
2
10
10
C
iss
C
oss
3
1
10
10
Tj = 25 °C typ
C
Tj = 175 °C typ
rss
Tj = 25 °C (98%)
Tj = 175 °C (98%)
2
0
10
10
V
0
5
10
15
20
30
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
DS
SD
Page 6
2003-05-09
SPP80N06S2-H5
SPB80N06S2-H5
13 Typ. avalanche energy
= f (T )
14 Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
par.: I = 80 A , V = 25 V, R = 25 Ω
parameter: I = 80 A pulsed
D
D
DD
GS
SPP80N06S2-H5
700
16
V
mJ
12
500
400
300
200
100
0
0,2 VDS max
10
8
0,8 VDS max
6
4
2
0
25
50
75
100
125
175
0
20
40
60
80 100 120
160
°C
nC
T
Q
Gate
j
15 Drain-source breakdown voltage
= f (T )
V
(BR)DSS
j
parameter: I =10 mA
D
SPP80N06S2-H5
66
V
62
60
58
56
54
52
50
°C
-60
-20
20
60
100
140
200
T
j
Page 7
2003-05-09
SPP80N06S2-H5
SPB80N06S2-H5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP80N06S2-H5 and BSPB80N06S2-H5, for simplicity the device is referred
to by the term SPP80N06S2-H5 and SPB80N06S2-H5 throughout this documentation.
Page 8
2003-05-09
相关型号：
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SPP80P06P H
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
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