SPD08N10 [INFINEON]
SIPMOS Power Transistor; SIPMOS功率晶体管
| 型号： | SPD08N10 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power Transistor |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data
SPD 08N10
SIPMOS Power Transistor
Product Summary
Features
Drain source voltage
100
0.3
8.4
V
V
DS
• N channel
Drain-Source on-state resistance
Continuous drain current
R
Ω
• Enhancement mode
DS(on)
A
I
D
• Avalanche rated
• dv/dt rated
Pin 1 Pin 2 Pin 3
Type
Package
P-TO252
P-TO251
Ordering Code
Packaging
G
D
S
SPD08N10
SPU08N10
Q67040-S4126-A2 Tape and Reel
Q67040-S4118-A2 Tube
Maximum Ratings, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
A
I
D
T = 25 ˚C
8.4
5.4
C
T = 100 ˚C
C
Pulsed drain current
33.6
IDpulse
T = 25 ˚C
C
Avalanche energy, single pulse
30
mJ
E
E
AS
I = 8.4 A, V = 25 V, R = 25 Ω
D
DD
GS
4
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
jmax
AR
kV/µs
dv/dt
I = 8.4 A, V = 80 V, di/dt = 200 A/µs
S
DS
Gate source voltage
Power dissipation
V
V
P
±20
GS
tot
40
W
T = 25 ˚C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55... +175
55/150/56
˚C
T , T
j
stg
Data Sheet
1
05.99
SPD 08N10
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
-
-
3.1 K/W
100
R
R
R
thJC
thJA
thJA
-
-
-
-
-
75
50
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
100
2.1
max.
Static Characteristics
Drain- source breakdown voltage
-
-
V
V
V
(BR)DSS
GS(th)
DSS
V
= 0 V, I = 0.25 mA
D
GS
3
4
Gate threshold voltage, V = V
GS
DS
I = 1 mA
D
Zero gate voltage drain current
µA
I
I
V
V
= 100 V, V = 0 V, T = 25 ˚C
-
-
0.1
-
1
DS
DS
GS
j
= 100 V, V = 0 V, T = 125 ˚C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
-
10
100 nA
GSS
V
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
= 10 V, I = 5.4 A
D
-
0.25
0.3
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
05.99
SPD 08N10
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
2
-
4.5
340
80
-
S
g
fs
V
≥2*I *R
, I = 8.4 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
425 pF
100
C
C
C
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
-
oss
rss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
-
30
40
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 3 A,
-
13
20
60
75
55
ns
t
d(on)
V
DD
GS
D
R = 50 Ω
G
Rise time
-
-
-
40
50
35
t
r
V
= 30 V, V = 10 V, I = 3 A,
GS D
DD
R = 50 Ω
G
Turn-off delay time
= 30 V, V = 10 V, I = 3 A,
t
d(off)
V
DD
GS
D
R = 50 Ω
G
Fall time
t
f
V
= 30 V, V = 10 V, I = 3 A,
GS D
DD
R = 50 Ω
G
Data Sheet
3
05.99
SPD 08N10
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
-
-
-
-
1.8
2.7 nC
10
Q
Q
Q
gs
V
= 80 V, I = 8.4 A
D
DD
Gate to drain charge
= 80 V, I = 8.4 A
6.65
12.6
5.93
gd
V
DD
D
Gate charge total
= 80 V, I = 8.4 A, V = 0 to 10 V
18.9
g
V
DD
D
GS
Gate plateau voltage
= 80 V, I = 8.4 A
-
V
V
(plateau)
V
DD
D
Reverse Diode
Inverse diode continuous forward current
-
-
-
-
-
-
-
8.4
33.6
1.6
A
V
I
S
T = 25 ˚C
C
Inverse diode direct current,pulsed
I
SM
T = 25 ˚C
C
Inverse diode forward voltage
1.2
90
0.35
V
SD
V
= 0 V, I = 16.8 A
F
GS
Reverse recovery time
V = 30 V, I =I , di /dt = 100 A/µs
135 ns
0.55 µC
t
rr
R
F
S
F
Reverse recovery charge
Q
rr
V = 30 V, I =l , di /dt = 100 A/µs
R
F S
F
Data Sheet
4
05.99
SPD 08N10
Power Dissipation
Drain current
I = f (T )
P
= f (T )
C
tot
D
C
parameter: V ≥ 10 V
GS
SPD08N10
SPD08N10
10
45
A
W
8
7
35
30
25
20
15
10
5
6
P
I
5
4
3
2
1
0
0
˚C
˚C
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
T
T
C
C
Safe operating area
I = f (V
Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 ˚C
parameter : D = t /T
C
p
SPD08N10
SPD08N10
10 1
10 2
K/W
t
= 15.0µs
p
A
I
10 0
V
100 µs
1 ms
10 1
R
I
Z
10 -1
D = 0.50
0.20
10 ms
10 0
0.10
0.05
10 -2
0.02
DC
single pulse
0.01
10 -1
10 -3
10 0
10 1
10 2
10 3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
V
t
p
DS
Data Sheet
5
05.99
SPD 08N10
Typ. output characteristics
I = f (V
Typ. drain-source-on-resistance
= f (I )
)
DS
D
R
DS(on)
D
parameter: t = 80 µs
p
parameter: V
GS
SPD08N10
SPD08N10
20
Ptot = 40W
1.0
A
l
k
Ω
j
b
c
d
e
f
g
h
i
V
[V]
GS
a
16
14
4.0
4.5
h
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
b
c
d
e
f
5.0
5.5
g
e
6.0
12
I
6.5
R
f
g
h
i
7.0
10
8
7.5
8.0
j
9.0
i
k
l
10.0
20.0
6
j
d
b
k
l
4
c
a
V
[V] =
c
2
GS
b
d
e
f
g
h
i
j
k
l
4.5 5.0 5.5 6.0 6.5
7.0 7.5 8.0 9.0 10.0 20.0
0
V
0
2
4
6
8
12
A
0
2
4
6
8
10
12
14
17
V
DS
I
D
Typ. forward transconductance
Typ. transfer characteristics I = f (V
)
D
GS
g = f(I ); T = 25˚C
parameter: t = 80 µs
fs
D
j
p
parameter: g
V
≥ 2 x I x R
fs
DS
D
DS(on) max
6
30
A
S
24
22
20
18
16
14
12
10
8
4
f
g
I
3
2
1
0
6
4
2
0
V
A
0
1
2
3
4
5
6
7
8
10
0
2
4
6
8
10 12 14 16
20
V
GS
I
D
Data Sheet
6
05.99
SPD 08N10
Gate threshold voltage
= f (T )
Drain-source on-resistance
= f (T )
V
GS(th)
j
R
DS(on)
j
parameter : V = V , I = 1 mA
GS
DS D
parameter : I = 5.4 A, V = 10 V
D
GS
SPD08N10
5.0
V
1.0
Ω
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
max
V
R
typ
98%
typ
min
˚C
-60
-20
20
60
100
160
˚C
-60
-20
20
60
100
180
T
j
T
j
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
I = f (V
)
)
SD
DS
F
parameter: V = 0 V, f = 1 MHz
parameter: T , t = 80 µs
GS
j
p
SPD08N10
10 3
10 2
A
pF
Ciss
10 1
10 0
10 -1
I
10 2
Coss
Crss
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 1
V
0
5
10
15
20
25
30
40
V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.0
V
DS
V
SD
Data Sheet
7
05.99
SPD 08N10
Typ. gate charge
Avalanche Energy E = f (T )
AS
j
V
= f (Q
)
parameter: I = 8.4 A, V = 25 V
GS
Gate
D
DD
parameter: I
= 8.4 A
R
= 25 Ω
D puls
GS
SPD08N10
35
16
V
mJ
12
10
8
25
20
15
10
5
E
V
V
V
DS max
0,2
0,8
DS max
6
4
2
0
0
˚C
20
40
60
80
100
120
160
0
2
4
6
8
10 12 14
19
16nC
Q
T
j
Gate
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPD08N10
120
V
114
112
110
108
106
104
102
100
98
V
96
94
92
90
˚C
-60
-20
20
60
100
180
T
j
Data Sheet
8
05.99
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