SPB80P06P G [INFINEON]
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.;
| 型号： | SPB80P06P G |
| 厂家： | 
Infineon |
| 描述： | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. |
| 文件： | 总11页 (文件大小：607K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPB80P06P G
SIPMOS Power-Transistor
Features
Product Summary
P-Channel
Drain source voltage
V
-60
0.023
-80
V
A
DS
Enhancement mode
Drain-source on-state resistance R
DS(on)
Avalanche rated
Continuous drain current
I
D
dv/dt rated
175°C operating temperature
° Pb-free lead plating: RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Pin 1 PIN 2/4 PIN 3
Type
Package
Lead free
G
D
S
SPB80P06P G
PG-TO263-3
Yes
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
I
D
A
1)
T
25 °C,
-80
-64
C =
T = 100 °C
C
Pulsed drain current
I
-320
D puls
T = 25 °C
C
Avalanche energy, single pulse
E
E
823
mJ
AS
AR
I = -80 A , V = -25 V, R = 25
D
DD
GS
Avalanche energy, periodic limited by T
34
6
jmax
Reverse diode dv/dt
dv/dt
kV/µs
I = -80 A, V = -48 , di/dt = 200 A/µs,
S
DS
T
= 175 °C
jmax
Gate source voltage
Power dissipation
V
P
±20
340
V
GS
tot
W
T = 25 °C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
,
T
-55...+175
55/175/56
°C
j
stg
1
Current limited by bondwire; with anRthJC = 0.4 K/W the chip is able to carry ID = -91A
Rev 1.6 Page 1
2011-09-01
SPB80P06P G
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
-
-
-
-
0.4
62
K/W
thJC
R
thJA
R
thJA
-
-
-
-
62
40
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
-60
max.
Static Characteristics
Drain- source breakdown voltage
V
V
-
-
V
(BR)DSS
GS(th)
V
= 0 V, I = -250 µA
D
GS
Gate threshold voltage, V = V
-2.1
-3
-4
GS
DS
I = -5.5 mA
D
Zero gate voltage drain current
I
µA
DSS
V
V
= -60 V, V = 0 V, T = 25 °C
-
-
-0.1
-10
-1
DS
DS
GS
j
= -60 V, V = 0 V, T = 150 °C
-100
GS
j
Gate-source leakage current
= -20 V, V = 0 V
I
-
-10
-100 nA
GSS
V
GS
DS
Drain-source on-state resistance
R
-
0.021 0.023
DS(on)
V
= -10 V, I = -64 A
D
GS
1
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.6
Page 2
2011-09-01
SPB80P06P G
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
18
-
36
-
S
fs
V
2*I *R
, I = -64 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = -25 V, f = 1 MHz
C
C
C
4026 5033 pF
1252 1565
iss
oss
V
GS
DS
Output capacitance
= 0 V, V = -25 V, f = 1 MHz
-
V
GS
DS
Reverse transfer capacitance
= 0 V, V = -25 V, f = 1 MHz
-
437
24
546
36
rss
V
GS
DS
Turn-on delay time
= -30 V, V = -10 V, I = -64 A,
t
t
t
t
-
ns
d(on)
V
DD
GS
D
R = 1
G
Rise time
-
-
-
18
56
30
27
84
45
r
V
= -30 V, V = -10 V, I = -64 A,
GS D
DD
R = 1
G
Turn-off delay time
= -30 V, V = -10 V, I = -64 A,
d(off)
V
DD
GS
D
R = 1
G
Fall time
f
V
= -30 V, V = -10 V, I = -64 A,
GS D
DD
R = 1
G
Rev 1.6
Page 3
2011-09-01
SPB80P06P G
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
Q
Q
Q
-
-
-
-
27.4
50
41
75
173
-
nC
gs
V
= -48 V, I = -80 A
D
DD
Gate to drain charge
= -48 V, I = -80 A
gd
V
DD
D
Gate charge total
= -48 V, I = -80 A, V = 0 to -10 V
115
-6.2
g
V
DD
D
GS
Gate plateau voltage
= -48 V , I = -80 A
V
V
(plateau)
V
DD
D
Parameter
Symbol
Values
typ.
Unit
min.
max.
-80
Reverse Diode
Inverse diode continuous forward current
I
-
-
-
-
-
-
A
S
T = 25 °C
C
Inverse diode direct current,pulsed
I
-
-320
-1.6
SM
T = 25 °C
C
Inverse diode forward voltage
V
-1.2
117
420
V
SD
V
= 0 V, I = -80 A
F
GS
Reverse recovery time
V = -30 V, I =I , di /dt = 100 A/µs
t
175 ns
630 nC
rr
R
F
S
F
Reverse recovery charge
V = -30 V, I =l , di /dt = 100 A/µs
Q
rr
R
F S
F
Rev 1.6
Page 4
2011-09-01
SPB80P06P G
Power dissipation
Drain current
I = f (T )
P
= f (T )
C
tot
D
C
parameter: V
10 V
GS
SPP80P06P
SPP80P06P
-90
360
A
W
-70
-60
-50
-40
-30
-20
-10
0
280
240
200
160
120
80
P
I
40
0
°C
°C
190
0
20 40 60 80 100 120 140 16
190
0
20 40 60 80 100 120 140 160
T
T
C
C
Safe operating area
I = f ( V
Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
SPP80P06P
SPP80P06P
-10 3
10 1
K/W
t
= 14.0µs
p
A
10 0
-10 2
10 -1
100 µs
I
Z
I
V
10 -2
1 ms
D = 0.50
0.20
10 ms
R
-10 1
10 -3
0.10
0.05
DC
0.02
single pulse
10 -4
0.01
-10 0
10 -5
-10 -1
-10 0
-10 1
-10 2
DS
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
V
t
p
Rev 1.6
Page 5
2011-09-01
SPB80P06P G
Typ. output characteristic
I = f (V ); T =25°C
Typ. drain-source-on-resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
GS
p
SPP80P06P
SPP80P06P
-190
A
Ptot = 340.00W
0.075
b
c
d
e
f
g
h
i
k
j
V
[V]
GS
a
-160
-140
-120
-100
-80
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-9.0
-10.0
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
b
c
d
e
f
i
h
I
R
g
h
i
g
e
f
j
k
-60
-40
d
b
V
[V] =
c
GS
c
a
-20
b
d
e
f
g
h
i
j
k
-4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0
j
k
0
V
A
0
-1 -2 -3 -4 -5 -6 -7 -8
-10
DS
0
-20 -40 -60 -80 -100 -120
-160
V
I
D
Typ. transfer characteristics I = f ( V
)
GS
Typ. forward transconductance
g = f(I ); T =25°C
D
V
2 x I x R
D DS(on)max
DS
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
50
-80
S
A
40
35
-60
-50
I
g
30
25
20
15
10
5
-40
-30
-20
-10
0
0
0
-1 -2 -3 -4 -5 -6 -7 -8
-10
GS
0
-10 -20 -30 -40 -50 -60 -70 -80
-100
V
V
A
I
D
Rev 1.6
Page 6
2011-09-01
SPB80P06P G
Drain-source on-state resistance
= f (T )
Gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = -64 A, V = -10 V
parameter: V = V , I = -5.5 mA
GS DS D
D
GS
SPP80P06P
-5.0
0.070
V
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
98%
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
typ
2%
V
R
98%
typ
°C
-60
-20
20
60
100
140
200
-60
-20
20
60
100
140
200
°C
T
T
j
j
Typ. capacitances
C = f (V )
Forward characteristics of reverse diode
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
SPP80P06P
10 5
10 3
pF
A
10 4
10 2
I
C
C
iss
C
C
oss
rss
10 3
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
10 0
0.0
V
0
-5
-10
-15
-25
DS
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
-3.0
V
V
V
SD
Rev 1.6
Page 7
2011-09-01
SPB80P06P G
Avalanche energy
= f (T )
Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
para.: I = -80 A , V = -25 V, R = 25
parameter: I = -80 A pulsed
D
DD
GS
D
SPP80P06P
850
-16
mJ
V
700
600
500
400
300
200
100
0
-12
-10
V
E
V
V
DS max
0,2
0,8
DS max
-8
-6
-4
-2
0
25
45
65
85 105 125 145
185
0
20 40 60 80 100 120 140
180
°C
nC
T
j
Q
Gate
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPP80P06P
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
V
°C
-60
-20
20
60
100
140
200
T
j
Rev 1.6
Page 8
2011-09-01
SPB80P06P G
PG-TO220-3
Rev 1.6
2011-09-01
Page 9
SPB80P06P G
PG-TO263-3
Rev 1.6
2011-09-01
Page 10
SPB80P06P G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
).
the nearest Infineon Technologies Office (www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev 1.6
Page 11
2011-09-01
相关型号：
SPB80P06PGATMA1
Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
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