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SIGC28T60SX1SA2 [INFINEON]

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3;
SIGC28T60SX1SA2
型号: SIGC28T60SX1SA2
厂家: Infineon    Infineon
描述:

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3

栅 功率控制 晶体管
文件: 总4页 (文件大小:80K)
中文:  中文翻译
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