SFH523 [INFINEON]

メ-モ-ャ-Strahlungsdetektor メ-モ-ャ-Radiation Detector; メ - モ - ャ-Strahlungsdetektorメ - モ - ャ-Radiation探测器

SFH523


型号：	SFH523
厂家：	Infineon
描述：	メ-モ-ャ-Strahlungsdetektor メ-モ-ャ-Radiation Detector メ - モ - ャ-Strahlungsdetektorメ - モ - ャ-Radiation探测器
文件：	总2页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SFH 523

SFH 523

α-β-γ−Strahlungsdetektor

α-β-γ−Radiation Detector

Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Eigenschaften

Substratscheibe:

Chipdicke:

4600 ± 1400 Ωcm

381 ± 15 µm

Vorderseite:

Aluminiumkontakt 1,4 µm

Aluminiumabdeckung ganzflächig 0,1 µm

0,4 µm Gold/Arsen

Rückseite:

● Kleiner Dunkelstrom

● Niedrige Kapazität

● Hohe Durchbruchspannung ermöglicht Betrieb bei voll ausgeräumten Chip

Features

Substrate:

4600 ± 1400 Ωcm

Chip thickness:

Topside:

381 ± 15 µm

Aluminium contact 1.4 µm

Aluminium total cover 0.1 µm

0.4 µm Au/As

Backside:

● Low dark current

● Low capacitance

● High breakdown voltage permits operation at full depletion

Typ

Type

Bestellnummer

Ordering Code

SFH 523

Q62702-P422

Semiconductor Group

491

10.95

SFH 523

Kennwerte

Characteristics

Bezeichnung

Description

Symbol

Symbol

Wert

Value

Einheit

Unit

Sperrspannung

Breakdown voltage

100 µA

V_R

> 180

V

Dunkelstrom

Dark current

80 V

I_R

nA

(< 120)

150 V

60 (< 240)

Flußspannung

Forward voltage

100 mA

V_F

C

0.7 (< 2)

V

Kapazität

Capacitance

f = 1 MHz, E_v= 0

80 V

pF

360

270

150 V

2

2

Kapazität pro cm

C

32

pF

/cm

2

Capacitance per cm

120 V

Betriebsspannung

Operating voltage

V_op

–

90 ... 120

10

V

Ladungsträger - Lebensdauer

Charge carrier - lifetime

msec.

2

Current and Capacitance Characteristics per cm

Semiconductor Group

492

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