SD203R25S20PV [INFINEON]
FAST RECOVERY DIODES Stud Version; 快恢复二极管梭哈版本型号: | SD203R25S20PV |
厂家: | Infineon |
描述: | FAST RECOVERY DIODES Stud Version |
文件: | 总9页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I2064 rev. A 09/94
SD203N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
200A
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-205AB (DO-9)
Maximum junction temperature 125°C
TypicalApplications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD203N/R
Units
200
85
A
°C
A
@ TC
IF(RMS)
IFSM
314
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4990
A
5230
A
I2t
125
KA2s
KA2s
V
114
VRRM range
400 to 2500
1.0 to 2.0
25
t
range
µs
°C
°C
rr
case style
DO-205AB (DO-9)
@ TJ
TJ
- 40 to 125
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1
SD203N/R Series
Bulletin I2064 rev. A 09/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
TJ = 125°C
mA
Type number
SD203N/R..S10
peak and off-state voltage
repetitive peak voltage
V
V
04
08
10
12
14
16
20
25
400
500
800
900
1100
1300
1500
1700
2100
2600
1000
1200
1400
1600
2000
2500
35
SD203N/R..S15
SD203N/R..S20
Forward Conduction
Parameter
SD203N/R Units Conditions
IF(AV) Max. average forward current
@ Case temperature
200
85
A
180° conduction, half sine wave.
°C
IF(RMS) Max. RMS current
314
4990
5230
4200
4400
125
A
DC @ 76°C case temperature
IFSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
114
KA2s
88
81
I2√t
Maximum I2√t for fusing
1250
1.00
1.47
1.10
0.46
1.65
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level of threshold voltage
F(TO)2 High level of threshold voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
V
(I > π x IF(AV)), TJ = TJ max.
rf1
rf2
VFM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
(I > π x IF(AV)), TJ = TJ max.
V
I = 628A, T = 25°C, t = 400 µs square pulse
pk p
J
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ=25oC
Code
typical t
I
di/dt
V
t
Q
I
rr
rr
pk
r
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
1.0
1.5
2.0
(A)
(A/µs)
(V)
(µs)
(µC)
52
(A)
33
44
46
S10
S15
S20
2.4
2.9
3.2
750
25
- 30
90
107
2
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SD203N/R Series
Bulletin I2064 rev. A 09/94
Thermal and Mechanical Specification
Parameter
SD203N/R Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
°C
-40 to 150
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
0.115
0.08
31
DC operation
K/W
Mounting surface, smooth, flat and greased
Not lubricated threads
T
Mounting torque ±10%
Nm
g
24.5
250
Lubricated threads
wt
Approximate weight
Case style
DO-205AB (DO-9)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.010
0.013
0.017
0.025
0.044
0.008
0.014
0.019
0.027
0.044
K/W
60°
30°
Ordering Information Table
Device Code
SD 20
3
R
25 S20
P
B
C
7
1
2
5
6
8
9
3
4
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fast recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
M = Stud base DO-205AB (DO-9) M16 X 1.5
8
-7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9
-
C = Ceramic housing (over 1600V)
V = Glass-metal seal (only up to 1600V)
3
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SD203N/R Series
Bulletin I2064 rev. A 09/94
Outline Table
CERAMIC HOUSING
19 (0.75)
MAX.
4 (0.16) MAX.
2
DIA. 8.5 (0.33) NOM.
C.S. 35mm
(0.054 s.i.)
DIA. 27.5 (1.08) MAX.
SW 32
Conform to JEDEC DO-205AB (DO-9)
All dimensions in millimeters (inches)
3/4"-16UNF-2A*
* FOR METRIC DEVICE: M16 X 1.5
GLASS-METAL SEAL
19 (0.75)
4 (0.16) MAX.
MAX.
DIA. 8.5 (0.33) NOM.
2
C.S. 35mm
(0.054 s.i.)
DIA. 28.5 (1.08) MAX.
SW 32
3/4-16UNF-2A*
* FOR METRIC DEVICE: M16 X 1.5
4
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SD203N/R Series
Bulletin I2064 rev. A 09/94
Outline Table
CERAMIC HOUSING
21 (0.83)
14 (0.55)
DIA. 6.5 (0.25)
DIA. 27.5 (1.08) MAX.
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5
DO-205AB (DO-9) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
21 (0.83)
14 (0.55)
DIA. 6.5 (0.26)
DIA. 28.5 (1.12) MAX.
3/4"-16UNF-2A*
*FOR METRIC DEVICE: M16 X 1.5
5
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SD203N/R Series
Bulletin I2064 rev. A 09/94
130
130
120
110
100
90
SD203N/ R Se rie s
SD203N/R Se rie s
(DC ) = 0.115 K/W
R
(DC ) = 0.115 K/ W
R
thJC
thJC
120
110
100
90
C o nd u ctio n Ang le
C o nd u ctio n Pe riod
30°
30°
60°
60°
90°
90°
120°
120°
80
80
180°
180°
DC
70
70
0
40
80
120
160
200
240
0
50 100 150 200 250 300 350
Ave ra g e Fo rwa rd C urre nt (A)
Ave ra g e Fo rwa rd C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
300
250
200
150
100
50
550
500
450
400
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
RMS Lim it
C o nd uctio n Ang le
C o nd u c tio n Pe riod
SD203N/R Se rie s
T = 125°C
J
SD203N/ R Se rie s
T = 125°C
J
0
0
0
50 100 150 200 250 300 350
Ave ra g e Fo rwa rd C urre nt (A)
0
50
100
150
200
Ave ra g e Fo rwa rd C urre nt (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
At Any Ra te d Lo a d Co nd itio n And With
Ma xim um Non Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tio n.
Ra te d V
Ap p lie d Fo llo win g Surg e .
RRM
Initia l T = 125°C
J
Initia l T = 125 °C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
SD203N/ R Se rie s
SD203N/ R Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
1
Numb e r O f Eq ua l Amp litud e Ha lf Cyc le C urre nt Pulse s (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
6
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SD203N/R Series
Bulletin I2064 rev. A 09/94
1
10000
1000
100
Ste a d y Sta te Va lue :
= 0.115 K/W
T = 25 °C
J
R
th JC
(DC O p e ra tio n)
T = 125 °C
J
0.1
0.01
SD203N/ R Se rie s
SD203N/ R Se rie s
4.5
0.001
0.001
0.01
0.1
1
10
.5
2.5
6.5
Sq ua re Wa ve Pulse Dura tion (s)
Insta nta ne ous Fo rwa rd Vo lta g e (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
120
V
FP
100
80
60
40
20
0
I
T = 125°C
J
TJ = 25°C
SD203N/ R..S20 Se rie s
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Ra te Off Fa ll Of Forwa rd C urre nt d i/d t (A/ use c )
Fig. 9 - Typical Forward Recovery Characteristics
2.8
140
100
90
80
70
60
50
40
30
20
I
= 750 A
I
= 750 A
FM
FM
130
120
110
100
90
SD203N/ R..S10 Se rie s
Sq ua re Pulse
Sq u a re Pu lse
T = 125 °C, V = 30V
2.6
2.4
2.2
2
J
r
400 A
200 A
I
= 750 A
FM
400 A
200 A
Sq ua re Pu lse
80
70
60
400 A
200 A
50
40
SD203N/ R..S10 Se rie s
T = 125 °C , V = 30V
1.8
1.6
30
SD203N/ R..S10 Se rie s
T = 125 °C, V = 30V
J
r
20
r
J
10
10
100
0
20
40
60
80
100
20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Fig. 12 - Recovery Current Characteristics
7
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SD203N/R Series
Bulletin I2064 rev. A 09/94
3.6
170
160
150
140
130
120
110
100
90
130
120
110
100
90
I
= 750 A
FM
I
= 750 A
SD203N/ R..S15 Se rie s
T = 125 °C , V = 30V
FM
Sq ua re Pulse
Sq ua re Pu lse
J
r
3.2
2.8
2.4
2
I
= 750 A
FM
400 A
200 A
400 A
200 A
Sq u a re Pulse
80
70
60
50
400 A
200 A
80
40
SD203N/ R..S15 Se rie s
T = 125 °C , V = 30V
70
30
SD203N/R..S15 Se rie s
T = 125 °C , V = 30V
J
r
60
20
J
r
50
10
1.6
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te O f Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig. 14 - Recovery Charge Characteristics
Fig. 15 - Recovery Current Characteristics
Fig.13 - Recovery Time Characteristics
3.6
300
130
SD203N/R..S20 Se rie s
I
= 750 A
FM
Sq ua re Pulse
I
= 750 A
120
110
100
90
FM
T = 125 °C , V = 30V
J
r
Sq ua re Pulse
3.4
3.2
3
250
200
150
100
50
400 A
I
= 750 A
FM
Sq ua re Pulse
400 A
200 A
80
200 A
400 A
200 A
70
60
2.8
2.6
2.4
50
SD203N/ R..S20 Se rie s
T = 125 °C , V = 30V
SD203N/ R..S20 Se rie s
T = 125 °C , V = 30V
40
r
J
J
r
30
20
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig.16 - Recovery Time Characteristics
Fig. 17 - Recovery Charge Characteristics
Fig. 18 - Recovery Current Characteristics
1E4
20 jo ule s p e r p ulse
10
20 jo ule s p e r p ulse
10
4
2
4
1
2
1
1E3
1E2
1E1
0.4
0.2
0.1
0.04
0.02
0.01
0.4
0.2
0.1
0.06
SD203N/R..S1 0 Se rie s
Tra p e zo id a l Pulse
T = 125°C , VRRM = 1120V
SD203N/ R..S10 Series
Sinuso id a l Pulse
T = 125°C, VRRM= 1120V
d v/ d t = 1000V/µs
J
J
tp
d v/ d t=1000V/µs, d i/ d t=50A/ µs
1E1
1E4
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se w id th (µs)
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
8
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SD203N/R Series
Bulletin I2064 rev. A 09/94
1E4
1E3
1E2
1E1
20 jo u le s p e r p ulse
10
20 jo ule s p e r p ulse
10
4
4
2
2
1
1
0.4
0.2
0.1
0.04
0.02
0.01
0.4
0.2
0.1
SD203N/ R..S15 Se ries
Tra p e zoid a l Pu lse
SD203N/R..S15 Se ries
Sinusoid a l Pulse
T = 125°C, VRRM = 1120V
d v/d t = 1000V/ µs
T = 125°C , VRRM= 1120V
J
tp
J
d v/d t=1000V/ µs, d i/ d t=50A/ µs
tp
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E1
20 jo ule s p er p u lse
20 jo ule s p e r p ulse
10
10
4
4
2
1
2
1
0.4
0.2
0.4
0.1
0.2
0.04
SD203N/R..S20 Se ries
Si nu soi d a l Pu lse
SD203N/ R..S20 Se rie s
Tra p e zoid a l Pu lse
0.02
0.01
T = 125°C , VRRM = 1760V
T = 125°C, VRRM = 1760V
J
J
tp
tp
d v/ d t=1000V/ µs, d i/ d t=50A/ µs
d v/ d t = 1000V/ µs
1E1
1E2
1E3
1E141E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
9
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