Q67060-S6136 [INFINEON]
Addendum for PCN-Datasheet 2004-018-A; 增编的PCN -数据2004-018 -A
| 型号： | Q67060-S6136 |
| 厂家： | 
Infineon |
| 描述： | Addendum for PCN-Datasheet 2004-018-A |
| 文件： | 总18页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Addendum for PCN 2004-018-A
BTS 5440 G
Addendum for PCN-Datasheet 2004-018-A: BTS 5440 G
This Addendum and PCN-Datasheet refers to the PCN 2004-018-A:
“Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “.
The PCN-datasheet attached will be valid starting from August 2004.
There are the following changes in the datasheet (on page 7):
Old:
Symbol
VCLA(T-)
min typ
max Unit
Current limit adjustment threshold voltage
2.6
-
-
-
-
V
3.6
New:
Symbol
VCLA(T-)
min typ
max Unit
Current limit adjustment threshold voltage
2.0
-
-
-
-
V
4.0
PCN 2004-018-A: BTS 5440G
Smart High-Side Power Switch
Four Channels: 4 x 25mΩ
IntelliSense
Package
Product Summary
Operating voltage
V
4,5...28
V
bb(on)
( Loaddump: 40 V )
Active channels
one
25
four parallel
On-state resistance
Nominal load current
Current limitation
R
6.5
mΩ
A
A
ON
I
6.2
13.9
IL(SCr)
P-DSO-28-19
Low
High
10
40
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions.
• Extern adjustable current limitation.
Application
• All types of resistive, inductive and capacitive loads
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Block Diagram
• Very low standby current
• CMOS compatible input
Vbb
• Improved electromagnetic compatibility (EMC)
• Stable behaviour at low battery voltage
IN1
IS1
IS2
IN2
Logic
Channel 1
Channel 2
Load 1
Protection Functions
• Reverse battery protection with external resistor
• Short circuit protection
• Overload protection
• Current limitation
• Thermal Shutdown
• Overvoltage protection with external resistor
CLA 1/2
Load 2
IN3
IS3
IS4
Logic
Channel 3
Channel 4
Load 3
IN4
CLA 3/4
Load 4
GND
• Loss of GND and loss of V protection
bb
• Electrostatic discharge Protection (ESD)
Dianostic Functions: IntelliSense
• Proportional load current sense ( with defined fault signal during thermal shutdown and overload )
• Additional open load detection in OFF - state
• Suppressed thermal toggling of fault signal
2004-Mar-08
Page 1
PCN 2004-018-A: BTS 5440G
Functional diagram
overvoltage
protection
current limit
gate
control
+
VBB
internal
voltage
supply
charge
pump
clamp for
logic
inductive load
OUT1
temperature
sensor
IN1
ESD
LOAD
openload
dedection
IS1
Current
sense
CLA 1/2
IN2
control and protection circuit
of
IS2
channel 2
GND1/2
OUT2
OUT3
OUT4
IN3
IS3
control and protection circuit
of
channel 3
CLA 3/4
IN4
control and protection circuit
of
IS4
GND3/4
channel 4
2004-Mar-08
Page 2
PCN 2004-018-A: BTS 5440G
Pin definition and function
Pin
Symbol
Function
1,14,
15,28
V
Positive power supply voltage. Design the wiring for the
simultaneous max. short circuit currents from channel 1 to 4
and also for low thermal resistance
bb
3
6
9
12
IN1
IN2
IN3
IN4
Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal
25,26,27 OUT1
22,23,24 OUT2
19,20,21 OUT3
16,17,18 OUT4
Output 1,2,3,4 protected high-side power output of channel 1,2,3,4.
Design the wiring for the max. short circuit current
4
5
IS1
IS2
IS3
IS4
CLA 1/2
CLA 3/4
Diagnostic feedback 1...4 of channel 1 to 4
On state: advanced current sense with defined signal in case
of overload or short circuit
10
11
7
13
2
Off state: High on failure
Current limit adjust; the current limit for channels 1/2 and 3/4 can
be chosen as high ( potential < 2,6V ) or low ( potential > 3,6V ).
GND 1/2 Ground of chip 1 ( channel 1,2 )
GND 3/4 Ground of chip 2 ( channel 3,4 )
8
Pin configuration
(top view)
V bb
1
28 V bb
•
GND ½
2
3
4
5
6
7
8
9
27 OUT1
26 OUT1
25 OUT1
24 OUT2
23 OUT2
22 OUT2
21 OUT3
20 OUT3
19 OUT3
18 OUT4
17 OUT4
16 OUT4
15 V bb
IN1
IS1
IS2
IN2
CLA ½
GND ¾
IN3
IS3 10
IS4 11
IN4 12
CLA ¾ 13
V bb 14
2004-Mar-08
Page 3
PCN 2004-018-A: BTS 5440G
Maximum Ratings at T =25°C, unless otherwise specified
j
Parameter
Supply voltage (overvoltage protection see page 6)
Symbol
Value
Unit
V
1)
V
V
V
V
28
28
bb
2)
Supply voltage for full short circuit protection;T = -40...150°C
ON
Maximum voltage across DMOS
52
3)
4)
Load dump protection V
= V + V ; V = 13,5 V
LoadDump
4)
A
S
A
Loaddump
In = low or high; t = 400 ms; R = 2 Ω
d
I
R = 2.25 Ω
40
L
R = 6.8 Ω
53
L
5)
Load current (Short - circuit current, see page 7)
Operating temperature range
I
T
I
A
°C
L
-40...+150
j
Storage temperature range
T
-55...+150
stg
Dynamical temperature rise at switching
Power dissipation (DC), all channels active
dT
60
1,6
K
W
6)
P
T = 85 °C
tot
mH
Maximal switchable inductance, single pulse
Z
L(s)
V =12V, T
=150°C;
(see diagrams on page 12)
bb
jstart
I = 6 A, E = 0.319 J, R = 0 Ω,
one channel:
two parallel channels:
9.8
5.2
L
AS
L
I = 12 A, E = 0.679 J, R = 0 Ω,
L
AS
L
kV
Electrostatic discharge voltage
IN: V
1,0
ESD
(Human Body Model)
IS:
2,0
according to ANSI EOS/ESD - S5.1 - 1993 , ESD STM5.1 - 1998 OUT:
Continuous input voltage
Voltage at current limit adjustment pin
Current through current limit adjustment pin
Current through input pin (DC)
4,0
-10...16
-10...16
±5.0
±5.0
-5...+10
V
V
V
IN
IN
mA
I
I
I
Current through sense pin (DC)
(see page 11)
IS
1
2
18...28 V for 100 hours
only single pulse, R = 200 mΩ ; L = 8 µH ; R and L are describing the complete circuit impedance including
L
line, contact and generator impedances.
3
4
5
Supply voltage higher thanV
require an external current limit for the GND (150Ω resistor) and sense pin.
bb(AZ)
R = internal resistance of the load dump test pulse generator.
I
Current limit is a protection function. Operation in current limitation is considered as "outside" normal operating
range. Protection functions are not designed for continuous repetitive operation.
6
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
2004-Mar-08
Page 4
PCN 2004-018-A: BTS 5440G
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
Values
Unit
at T = -40...+150 °C, V = 9...16 V, unless otherwise specified
min. typ. max.
j
bb
Thermal Resistance
junction - soldering point
1)
R
each channel:
one channel active:
all channels active:
-
-
-
40
32
25 K/W
thJS
2)
R
thJA
-
K/W
junction - ambient
Load Switching Capabilities and Characteristics
On-state resistance (V to OUT),
(see page 13)
R
mΩ
bb
ON
T = 25 °C, I = 5 A,
each channel:
each channel:
two parallel channels:
four parallel channels:
-
-
-
-
21
42
11
5.5
25
50
13
6.5
j
L
T = 150 °C,
j
T = 25 °C,
j
T = 25 °C,
j
2)
A
Nominal load current
I
L(nom)
T = 85°C, T ≤ 150°C ,
one channel active:
two channels active, per channel:
four channels active, per channel:
5.7
4.0
3.1
6.2
4.4
3.4
-
-
-
a
j
-
40
-
mV
mA
Output voltage drop limitation at small load currents V
ON(NL)
I = 0.5 A
L
3)
-
-
2
Output current while GND disconnected
I
L(GNDhigh)
( see diagram page 12 )
V = 0 V
IN
1
2
Soldering point is measured at Vbb-pin
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
3
not subject to production test, specified by design
2004-Mar-08
Page 5
PCN 2004-018-A: BTS 5440G
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
Values
Unit
at T = -40...+150 °C, V = 9...16 V, unless otherwise specified
min. typ. max.
j
bb
Load Switching Capabilities and Characteristics
1)
-
-
90
200
220
Turn-on time
to 90% V
t
µs
OUT
on
R = 12 Ω, V = 12 V
L
bb
1)
100
Turn-off time
to 10% V
t
off
OUT
R = 12 Ω, V = 12 V
L
bb
1)
0.1
0.25 0.45
V/µs
Slew rate on
10 to 30% V
R = 12 Ω, V = 12 V
,
dV/dt
OUT
OUT
on
L
bb
1)
0.09 0.25
0.4
Slew rate off
70 to 40% V
,
-dV/dt
off
R = 12 Ω, V = 12 V
L
bb
Operating Parameters
2)
4.5
41
-
47
28
52
V
Operating voltage
V
V
3)
Overvoltage protection
= 40 mA
bb(AZ)
I
bb
4)
µA
Standby current
I
bb(off)
(see diagram on page 13)
T = -40...+25 °C, V = 0 V
-
-
10
-
15
40
j
IN
T = 150 °C
j
1
2
3
See timing diagram on page 14.
18V...28V for 100 hours
Supply voltages higher thanV
require an external current limit for the status pin and GND pin (e.g. 150Ω).
in table of protection functions and circuit diagram on page 11.
bb(AZ)
See also V
Out(CL)
4
Measured with load; for the whole device; all channels off.
2004-Mar-08
Page 6
PCN 2004-018-A: BTS 5440G
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
Values
Unit
at T = -40...+150 °C, V = 9...16 V, unless otherwise specified
min. typ. max.
j
bb
Operating Parameters
-
-
1.5
1.6
8
4
µA
Off-State output current (included in I
)
I
L(off)
bb(off)
V = 0 V, each channel
IN
1)
mA
Operating current
I
GND
V = 5 V, per active channel
IN
2)
Protection Functions
A
Current limit, ( see timing diagrams, page 15 )
Low level; if potential at CLA = high
High level; if potential at CLA = low
I
L(LIM)
7
40
11
50
14
60
V
A
Current limit adjustment threshold voltage
V
V
2.0
-
-
-
-
CLA(T-)
CLA(T+)
4.0
Repetitive short circuit current limit
I
L(SCr)
T = T (see timing diagrams on page 15)
jt
j
High level
one active channel:
two active channels :
-
-
-
-
40
40
7
-
-
-
-
3)
Low level
one active channel:
3)
two active channels :
7
ms
V
Initial short circuit shutdown time
= 25°C ; V = 13,5 V
Output clamp (inductive load switch off)
low level:
high level:
4)
t
-
-
-
3.5
0.75
-15
-
-
-
off(SC)
T
j,start
bb
V
T
Out(CL)
jt
I = 40 mA
L
Thermal overload trip temperature
Thermal hysteresis
150
-
170
10
-
-
°C
K
∆T
jt
1
Add I , if I > 0
IS IS
2
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3
4
At the beginning of the short circuit the double current is possible for a short time.
If channels are connected in parallel, output clamp is usually accomplished by the
channel with the lowest V
Out(CL)
.
2004-Mar-08
Page 7
PCN 2004-018-A: BTS 5440G
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
Values
Unit
at T = -40...+150 °C, V = 9...16 V, unless otherwise specified
min. typ. max.
j
bb
Diagnostic Characteristics
2
11
3.2
23
4.4
35
V
kΩ
Open load detection voltage
Internal output pull down
V
1)
R
OUT(PD)
V
= 13.5 V
OUT
Current sense ratio, static on-condition
= I :I
k
ILIS
k
ILIS
L IS
I = 0.5 A
4640 5800 6960
4900 5400 5900
4900 5350 5800
L
I = 3 A
L
I = 6 A
L
2)
5
6.2
7.5
V
Sense signal in case of fault-conditions
in off-state
V
fault
Current saturation of sense fault signal
Sense signal delay after thermal shutdown
Current sense output voltage limitation
I
t
V
4
-
5.4
-
-
-
mA
fault
3)
1.2 ms
7.3
6.5
V
IS(lim)
IS(LH)
son(IS)
slc(IS)
I = 0 , I = 5 A
IS
L
-
-
-
-
-
-
5
µA
µs
Current sense leakage/offset current
V = 5 V, I = 0 , V = 0
I
t
t
IN
L
IS
400
300
Current sense settling time to I static ±10%
IS
4)
after positive input slope , I = 0 to 5A
L
Current sense settling time to I static ±10%
IS
4)
after change of load current , I = 2.5 to 5A
L
1
2
In case of floating output, the status doesn´t show open load.
Fault condition means output voltage exceeds open load detection voltageV
OUT(OL)
3
In the case of thermal shutdown the V
signal remains for t
longer
fault
delay(fault)
than the restart of the switch ( see diagram on page 16 ).
4
not subject to production test, specified by design
2004-Mar-08
Page 8
PCN 2004-018-A: BTS 5440G
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = -40...+150 °C, V = 9...16 V, unless otherwise specified
min. typ. max.
bb
Diagnostic Characteristics
Status invalid after negative input slope
Status invalid after positive input slope
with open load
-
-
-
-
1.2 ms
t
d(SToff)
20
t
µs
d(STOL)
1)
Input Feedback
2.0
-
1.0
-
3.5
-
-
0.5
-
5.5
2.4
-
Input resistance (see circuit page 11)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
R
kΩ
I
V
V
V
-
∆V
IN(off)
3
40 µA
Off state input current
I
V = 0.4 V
IN
20
50
90
On state input current
I
IN(on)
V = 5 V
IN
2)
Reverse Battery
-
-
-
27
-
V
mV
Reverse battery voltage
Drain-source diode voltage (V
-V
-V
bb
330
> V )
bb
OUT
ON
T = 150 °C, I = -10 mA
j
bb
1
2
If ground resistors R
are used, add the voltage drop across these resistor.
GND
Requires a 150Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode
has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions
due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse
current operation! Input and status currents have to be limited. (see max. ratings page 4 )
2004-Mar-08
Page 9
PCN 2004-018-A: BTS 5440G
Truth Table - for each of the four channels
Input
level
Output
level
L
Diagnostic
output
1)
Normal
L
Z
Operation
H
V
I = I / kilis
bb
IS
L
Current
Limitation
Short circuit
to GND
Overtemperature
H
V
V
bb
fault
1)
2)
L
H
L
H
L
L
L
L
L
V
V
Z
V
fault
1)
Z
V
fault
Short circuit
V
bb
bb
fault
3)
to V
H
< I = I / kilis
bb
IS
L
Open load
L
H
>V
V
Z
out(OL)
fault
1)
V
bb
L = " Low" Level Z = high impedance, potential depends on external circuit
H = "High" Level = 5V typ., constant voltage independent of external sense resistor.
V
fault
Parallel switching of channels is possible by connecting the inputs and outputs parallel.
The current sense ouputs have to be connected with a single sense resistor.
Terms
I
bb
V
V
ON3
Leadframe
Leadframe
ON1
V
V
bb
V
V
ON4
bb
V
ON2
I
I
I
I
IN3
IN4
IN1
IN2
V
V
bb
bb
9
3
19
20
21
25
26
27
IN3
IN1
I
I
L3
L4
L1
L2
OUT3
OUT4
OUT1
OUT2
12
10
6
4
IN4
IN2
PROFET
PROFET
I
I
I
I
I
IS1
IS2
IS3
IS4
I
IS1
IS3
16
17
18
22
23
24
V
V
V
IN3
IN1 IN2
IN4
11
13
5
7
IS2
IS4
V
OUT3
V
V
V
V
IS1
V
CLA3/4
CLA1/2
IS2
IS4
IS3
OUT1
GND3/4
GND1/2
V
V
2
V
8
V
OUT4
OUT2
CLA3/4
CLA1/2
I
GND
I
GND
Leadframe (V ) is connected to pin 1, 14, 15, 28
bb
1
2
3
L-potential by using a sense resistor
Current limitation is only possible while the device is switched on.
Low ohmic short to V may reduce the output current I and therefore also the sense current I .
bb
L
IS
2004-Mar-08
Page 10
PCN 2004-018-A: BTS 5440G
Input circuit ( ESD protection ), IN1...IN4
Inductive and overvoltage output clamp,
OUT1...OUT4
R
I
IN
+V
+V
bb
bb
V
V
Z
Z
ESD-ZD
I
I
I
OUT
OUT
GND
V
V OOUUTT
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended.
GND
GND
Power GND
Power GND
V
clamped to V
= -15 V typ.
Out
Out(CL)
Sense-Status output, IS1...IS4
ON-State: Normal operation: I = I /
S
L kILIS
Overvolt. Protection of logic part
V
= I * R
;
R
R
= 1kΩ nominal
> 500Ω
IS
S
IS
IS
OUT1...OUT4
IS
+
V
bb
V
Sense output
logic
Z2
V
R
I
IS
IN
IS
I
Logic
IS
IS
V
f
V
Z1
PROFET
GND
R
IS
ESD-ZD
R
R
GND
IS
GND
Signal GND
V
R
= 6,1V typ., V = 47V typ., R
= 150Ω ,
GND
ESD zener diode: V
ESD
ON-State: Fault condition so as thermal shut down
or current limitation
= 6,1 V typ., max. 14 mA ;
Z1
IS
Z2
= 1kΩ , R = 3,5kΩ typ.
I
Sense output
logic
V
fault
V
fault
V
f
R
IS
ESD-ZD
GND
V
= 6 V typ ; V
fault
< V
under all conditions
fault
ESD
OFF-State diagnostic condition:
Open Load, if V
> 3 V typ.; IN low
OUT
Int. 5V
IS - ST
RIS
ESD-
ZD
GND
ESD-Zener diode: 6,1V typ., max. 5mA; R
ST(ON)
< 375Ω
at 1,6mA.. The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended.
2004-Mar-08
Page 11
PCN 2004-018-A: BTS 5440G
Vbb disconnect with energized inductive
load
Reverse battery protection
OUT1...OUT4
-
V
bb
V
Z2
V
hhigghh
R
I
IN
IN
Logic
OUT
PROFET
IS
O U T
IS
V
Z1
GND
PR O FET
-I
G N D
R
V
R
IS
R
Load
G N D
bb
Load G N D
Signal G N D
For inductive load currents up to the limits defined
V
R
= 6,1V typ., V = 47V typ., R
Z2
= 150Ω
Z1
IS
GND
by Z each switch is protected against loss of V
.
L
bb
= 1kΩ, R = 3,5kΩ typ.
I
(max. ratings and diagram on page 12)
In case of reverse battery the load current has to
be limited by the load. Protection functions are
not active.
Consider at your PCB layout that in the case of Vbb
disconnection with energized inductive load all the
load current flows through the GND connection.
Open load detection, OUT1...OUT4
Inductive load switch-off energy
dissipation
Off-state diagnostic condition:
Open load, if V
> 3 V typ.; IN = low
OUT
E
bb
V
bb
E
AS
E
E
R
Load
E XT
V
bb
IN
IS
OFF
OUT
V
PROFET
OUT
L
=
L
GND
Open load
detection
Logic
unit
Z
L
{
E
R
R
L
Signal GND
2
Energy stored in load inductance: E = ½ * L * I
L
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
L
GND disconnect
E
= E + E - E = V * i (t) dt,
bb ON(CL) L
AS
L
R
V
bb
IN
with an approximate solution for R > 0Ω:
L
OUT
PROFET
IS
GND
I
L
* L
I
L
* R
L
V
V
V
E
AS
=
*(Vbb+|VOUT (CL)| )*ln(1+
)
V
bb
IN
IS
GND
2 * R
L
|VOUT (CL)|
Any kind of load.
2004-Mar-08
Page 12
PCN 2004-018-A: BTS 5440G
Typ. standby current
Maximum allowable load inductance
for a single switch off (one channel)
I
= f(T ) ; V = 16 V ; V
= low
IN1...4
bb(off)
j
bb
L =f(IL); T
= 150°C, V = 12V, R = 0Ω
jstart
bb L
16
14
12
10
8
1000
100
10
1
6
4
2
0
-40 -20
0
20 40 60 80 100 120 140 160
0,1
Tj [°C]
0
5
10
IL [A]
15
20
Typ. on-state resistance
= f(V ,T ); I = 5 A ; V = high
R
ON
bb
j
L
in
30
28
26
24
22
20
18
16
14
12
0
5
10
15
20
25
30
35
Vbb [V]
2004-Mar-08
Page 13
PCN 2004-018-A: BTS 5440G
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4.
Figure 1a: Switching a resistive load,
Figure 1c: Behaviour of sense output:
Sense current (I ) and sense voltage (V )
change of load current in on-condition
S
S
as function of load current dependent on
IN
the sense resistor.
Shown is V and I for three different
S
S
VOUT
sense resistors. Curve 1 refers to a low
resistor, curve 2 to a medium-sized
resistor and curve 3 to a big resistor.
Note, that the sense resistor may not falls
short of a minimum value of 500Ω.
t
on
t
off
t
t
slc(IS)
IL
slc(IS)
V
S
Load 1
Load 2
V
ESD
V
fault
I ,V
S
S
t
3
t
son(IS)
2
1
I
The sense signal is not valid during settling time after
turn on or change of load current. tslc(IS) = 300 µs typ.
L
L
I
S
1
2
3
Figure 1b: V turn on
bb
IN
I
I
L(lim)
V
bb
I = I / k
S
L
ILIS
V
= I * R ; R = 1kΩ nominal
IS
S
IS IS
R
> 500Ω
IS
I
L
I ,V
S
S
proper turn on under all conditions
2004-Mar-08
Page 14
PCN 2004-018-A: BTS 5440G
Figure 2a: Switching a lamp
Figure 3a: Short circuit:
Shut down by overtemperature,
reset by cooling
IN
IN
IS
I
I
L(lim)
L
VO U T
I
L(SCr)
IL
t
delayfault
V
fault
t
V
S
Figure 2b: Switching a lamp with current limit:
The behaviour of I and V is shown for a
resistor, which refers to curve 1 in figure 1c
S
S
Heating up may require several milliseconds,
depending on external conditions.
I
= 50A typ. increases with
L(lim)
IIN
decreasing temperature.
VOO
U
T
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
( channel 1 and 2 switched parallel )
I LL
IN1/2
I
I
I
+ I
L1
2 x I
L2
V
L(lim )
V
u llt
t
I
L(SCr)
t
off(SC)
, V
S2
t
delayfault
V
S1
V
fault
2004-Mar-08
Page 15
PCN 2004-018-A: BTS 5440G
1)
Figure 4a: Overtemperature
Figure 6a: Current sense ratio
Reset if T < T
j
jt
The behaviour of I and V is shown for a resistor,
7000
S
S
k
ILIS
which refers to curve 1 in figure 1c.
IN
6000
5000
4000
I
L
I
S
I
[A]
L
t
delay(fault)
T
J
0 1 2 3 4 5 6 7 8 9 10 11 12 13
t
Figure 5a:Open-load: detection in OFF-state,
turn on/off to open load.
Open load of channel 1; other channels normal
opertaion.
IN1
toff
toff
VOUT1
IL1
tST delay
tST delay
IS
V
fault
t
= 250µs max.;
t
= 500µs max.
ST delay
off
with pull up resistor at output
1
This range for the current sense ratio refers to all devices. The accuracy of the
k
can
ILIS
be raised by calibrating the value of
k
for every single device.
ILIS
2004-Mar-08
Page 16
PCN 2004-018-A: BTS 5440G
Package and ordering code
all dimensions in mm
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
P-DSO-28-19
Sales Code
Ordering Code
D-81669 München
BTS 5440G
Q67060-S6136
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery
terms and conditions and prices please contact
your nearest Infineon Technologies Office in
Germany or our Infineon Technologies
Representatives worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information
on the types in question please contact your
nearest Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies,
if a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.
2004-Mar-08
Page 17
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