Q67040-S4640 [INFINEON]
CoolMOS Power Transistor; 的CoolMOS功率晶体管
| 型号： | Q67040-S4640 |
| 厂家： | 
Infineon |
| 描述： | CoolMOS Power Transistor |
| 文件： | 总10页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPW24N60C3
CoolMOSTM Power Transistor
Features
Product Summary
DS @ T j,max
R DS(on),max
I D
V
650
V
Ω
A
• New revolutionary high voltage technology
• Ultra low gate charge
0.16
24.3
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO247
Type
Package
Ordering Code Marking
SPW24N60C3
P-TO247
Q67040-S4640
24N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
24.3
15.4
72.9
780
Continuous drain current
A
Pulsed drain current1)
I D,pulse
E AS
I D=12.1 A, V DD=50 V
Avalanche energy, single pulse
mJ
1),2)
1)
E AR
I AR
I D=24.3 A, V DD=50 V
1.5
Avalanche energy, repetitive t AR
24.3
A
Avalanche current, repetitive t AR
Drain source voltage slope
Gate source voltage
I D=24.3 A,
50
dv /dt
V/ns
V
V
DS=480 V, T j=125 °C
V GS
±20
±30
static
V GS
AC (f >1 Hz)
T C=25 °C
P tot
240
Power dissipation
W
T j, T stg
-55 ... 150
Operating and storage temperature
°C
Rev. 1.0
page 1
2004-04-27
SPW24N60C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
0.52 K/W
62
Thermal resistance, junction -
ambient
R thJA
leaded
1.6 mm (0.063 in.)
from case for 10 s
T sold
Soldering temperature
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V (BR)DS
V
V
GS=0 V, I D=250 µA
GS=0 V, I D=24.3 A
Drain-source breakdown voltage
Avalanche breakdown voltage
600
-
-
-
-
V
700
V GS(th)
V
DS=V GS, I D=1.2 mA
Gate threshold voltage
2.1
-
3
3.9
1
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
0.1
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
-
-
100
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
GS=10 V, I D=15.4 A,
R DS(on)
Drain-source on-state resistance
0.14
0.16
Ω
T j=25 °C
V
GS=10 V, I D=15.4 A,
-
-
-
0.34
0.7
24
-
-
-
T j=150 °C
R G
g fs
Gate resistance
f =1 MHz, open drain
|V DS|>2|I D|R DS(on)max
I D=15.4 A
,
Transconductance
S
Rev. 1.0
page 2
2004-04-27
SPW24N60C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
C iss
-
-
-
2800
930
66
-
-
-
pF
V
GS=0 V, V DS=25 V,
C oss
C rss
Output capacitance
f =1 MHz
Reverse transfer capacitance
Effective output capacitance, energy
related3)
C o(er)
-
-
114
204
-
-
V
GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related4)
C o(tr)
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
13
21
73
6
-
-
-
-
ns
V
V
DD=480 V,
GS=10 V, I D=24.3 A,
Turn-off delay time
Fall time
R G=3.3 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
15
49
-
nC
V
V
DD=480 V,
I D=24.3 A,
GS=0 to 10 V
Q gd
-
137
-
Q g
105
5.4
V
V plateau
Gate plateau voltage
1) Pulse width limited by maximum temperature T j,max only
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.0
page 3
2004-04-27
SPW24N60C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
24.3
72.9
A
V
T C=25 °C
I S,pulse
V
GS=0 V, I F=24.3 A,
V SD
Diode forward voltage
-
0.96
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
600
13
-
-
-
ns
µC
A
V R=480 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
70
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
R th1
R th2
R th3
R th4
R th5
0.00705
0.00972
0.0546
0.0906
0.133
K/W
C th1
C th2
C th3
C th4
C th5
C th6
0.000231
0.0014
0.00197
0.0112
0.0612
Ws/K
4.45)
5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
thCA=0 K/W.
R
Rev. 1.0
page 4
2004-04-27
SPW24N60C3
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P tot=f(T C)
102
250
200
150
100
50
1 µs
limited by on-state
resistance
10 µs
100 µs
101
1 ms
DC
10 ms
100
10-1
0
100
101
102
103
0
40
80
120
160
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
100
80
70
60
50
40
30
20
10
0
20 V
7 V
6.5 V
0.5
10-1
0.2
6 V
0.1
0.05
0.02
5.5 V
10-2
0.01
single pulse
5 V
4.5 V
4 V
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
0
5
10
15
20
V
DS [V]
t
p [s]
Rev. 1.0
page 5
2004-04-27
SPW24N60C3
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: V GS
40
0.8
20 V
5.5 V
4.5 V
5 V
4 V
7 V
6.5 V
6 V
0.7
5.5 V
30
20
10
0
0.6
0.5
0.4
0.3
0.2
0.1
6 V
5 V
20 V
4.5 V
4 V
0
0
0
5
10
15
20
10
20
30
40
V
DS [V]
I
D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=15.4 A; V GS=10 V
0.5
100
80
60
40
20
0
25 °C
0.4
0.3
0.2
98 %
150 °C
typ
0.1
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 1.0
page 6
2004-04-27
SPW24N60C3
9 Typ. gate charge
GS=f(Q gate); I D=24.3 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
12
25 °C
25 °C, 98%
150 °C, 98%
10
8
150 °C
120 V
480 V
101
6
4
100
2
10-1
0
0
0.5
1
1.5
SD [V]
2
2.5
0
20
40
60
gate [nC]
80
100
120
Q
V
11 Avalanche SOA
12 Avalanche energy
I
AR=f(t AR
)
E
AS=f(T j); I D=12.1 A; V DD=50 V
parameter: T j(start)
25
1000
20
15
10
5
800
600
400
200
0
25 °C
125 °C
0
10-3
10-2
10-1
100
101
102
103
20
60
100
T j [°C]
140
180
t
AR [µs]
Rev. 1.0
page 7
2004-04-27
SPW24N60C3
13 Drain-source breakdown voltage
14 Typ. capacitances
V
BR(DSS)=f(T j); I D=0.25 mA
C =f(V DS); V GS=0 V; f =1 MHz
105
700
104
660
620
580
540
Ciss
103
Coss
102
Crss
101
0
100
200
300
DS [V]
400
500
-60
-20
20
60
T j [°C]
100
140
180
V
15 Typ. C oss stored energy
E
oss= f(V DS)
20
16
12
8
4
0
0
100
200
300
400
500
600
V
DS [V]
Rev. 1.0
page 8
2004-04-27
SPW24N60C3
Definition of diode switching characteristics
P-TO247: Outline
Dimensions in mm
Rev. 1.0
page 9
2004-04-27
SPW24N60C3
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 10
2004-04-27
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