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元器件品牌
PXAC243502FV_15
[INFINEON]
High Power RF LDMOS Field Effect Transistor;
元器件型号：
PXAC243502FV_15
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
High Power RF LDMOS Field Effect Transistor
PDF文件：
总10页 (文件大小：1367K)
下载文档：
下载PDF数据表文档文件
型号参数：PXAC243502FV_15参数
查看货源
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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 â 2400 MHz
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PXAC243502FVV1R0
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 â 2400 MHz
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PXAC243502FVV1R250
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 â 2400 MHz
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PXAC243502FVV1R250XTMA1
RF Power Field-Effect Transistor,
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PXAC243502FVV1XWSA1
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PXAC260602FC_16
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 â 2690 MHz
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PXAC260602FCV1R0
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 â 2690 MHz
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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INFINEON
PXAC260602FCV1R0XTMA1
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 â 2690 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
INFINEON
PXAC260602FCV1R250
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 â 2690 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
INFINEON
PXAC260602FCV1R250XTMA1
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 â 2690 MHz
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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PXAC261002FC
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 â 2690 MHz
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INFINEON
PXAC261002FCV1R0
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on line
156
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