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PXAC203302FVV1R250XTMA1 [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 â 2025 MHz;

PXAC203302FVV1R250XTMA1


元器件型号：	PXAC203302FVV1R250XTMA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 â 2025 MHz
PDF文件：	总8页 (文件大小：1192K)
下载文档：	下载PDF数据表文档文件
型号参数：PXAC203302FVV1R250XTMA1参数

PXAC241002FC

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz

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0 CREE

PXAC241002FCV1R0

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz

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0 CREE

PXAC241002FC-V1-R0

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz

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0 CREE

PXAC241002FCV1R2

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz

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0 CREE

PXAC241002FC-V1-R2

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz

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0 CREE

PXAC241702FC

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz

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0 INFINEON

PXAC241702FCV1R0

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz

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0 INFINEON

PXAC241702FCV1R0XTMA1

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz

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0 INFINEON

PXAC241702FCV1R250

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz

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0 INFINEON

PXAC241702FCV1R250XTMA1

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz

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0 INFINEON

PXAC243502FV

High Power RF LDMOS Field Effect Transistor

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0 INFINEON

PXAC243502FV_15

High Power RF LDMOS Field Effect Transistor

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0 INFINEON

PXAC243502FV_16

High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 â 2400 MHz

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0 INFINEON

PXAC243502FVV1R0

High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 â 2400 MHz

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0 INFINEON

PXAC243502FVV1R0XTMA1

RF Power Field-Effect Transistor,

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0 INFINEON

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