Toggle navigation
首页
加载中...
马上查询
×
马上查询
关闭背景特效
首页
|
元器件品牌
PTFB241402F_16
[INFINEON]
High Power RF LDMOS Field Effect Transistor 140 W, 2300 â 2400 MHz;
元器件型号：
PTFB241402F_16
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
High Power RF LDMOS Field Effect Transistor 140 W, 2300 â 2400 MHz
PDF文件：
总13页 (文件大小：810K)
下载文档：
下载PDF数据表文档文件
型号参数：PTFB241402F_16参数
查看货源
PTFB241402F-2X70W
RF Power Field-Effect Transistor
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFB241402FV1
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-4, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFB241402FV1
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-4, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFB241402FV1R0
High Power RF LDMOS Field Effect Transistor 140 W, 2300 â 2400 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFB241402FV1R0XTMA1
RF Power Field-Effect Transistor,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFB241402FV1R250
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-4, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFB241402FV1R250
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-4, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFB241402FV1R250XTMA1
RF Power Field-Effect Transistor,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFC210202FC
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
CREE
PTFC210202FC
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 â 2200 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFC210202FC_16
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 â 2200 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFC210202FCV1R0
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 â 2200 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFC210202FCV1R0XTMA1
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 â 2200 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFC210202FCV1R250
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 â 2200 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFC210202FCV1R250XTMA1
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 â 2200 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
©2020 ICPDF网
联系我们和版权申明
INFINEON TECHNOLOGIES AG 
