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PTFB093608FVV2R250XTMA1 [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET;

PTFB093608FVV2R250XTMA1


元器件型号：	PTFB093608FVV2R250XTMA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Thermally-Enhanced High Power RF LDMOS FET
PDF文件：	总13页 (文件大小：1107K)
下载文档：	下载PDF数据表文档文件
型号参数：PTFB093608FVV2R250XTMA1参数

PTFB093608FVV2XWSA1

Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON

PTFB093608SV

Thermally-Enhanced High Power RF LDMOS FET

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4 INFINEON

PTFB093608SV_15

Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON

PTFB181702FC

Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 â 1880 MHz

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0 CREE

PTFB181702FC

Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON

PTFB181702FCV1R0

Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON

PTFB181702FCV1R0XTMA1

Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON

PTFB181702FCV1R250

Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON

PTFB181702FCV1R250XTMA1

Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON

PTFB182503EFL

Thermally-Enhanced High Power RF LDMOS FETs

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0 INFINEON

PTFB182503EL

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

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29 INFINEON

PTFB182503ELV1R0

Thermally-Enhanced High Power RF LDMOS FETs

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0 INFINEON

PTFB182503ELV1R0XTMA1

Thermally-Enhanced High Power RF LDMOS FETs

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0 INFINEON

PTFB182503ELV1R250

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-33288-6, 6 PIN

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0 INFINEON

PTFB182503ELV1R250

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-33288-6, 6 PIN

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0 INFINEON

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