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ND171N12K [INFINEON]

Netz-Dioden-Modul Rectifier Diode Module;

ND171N12K


元器件型号：	ND171N12K
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Netz-Dioden-Modul Rectifier Diode Module
PDF文件：	总10页 (文件大小：546K)
下载文档：	下载PDF数据表文档文件
型号参数：ND171N12K参数

ND171N14KHPSA1

Rectifier Diode, 1 Phase, 1 Element, 171A, 1400V V(RRM), Silicon, MODULE-3

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0 INFINEON

ND171N16K

Netz-Dioden-Modul Rectifier Diode Module

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0 INFINEON

ND171N18KHPSA1

Rectifier Diode, 1 Phase, 1 Element, 171A, 1800V V(RRM), Silicon, MODULE-3/2

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1 INFINEON

ND181

Switching Diode

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25 AUK

ND181

Small Signal Fast Switching Diode

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31 KODENSHI

ND2010C000J0G

Barrier Strip Terminal Block

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0 AMPHENOL

ND2012E

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 160MA I(D) | TO-52

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47 ETC

ND2012L

N-Channel Depletion-Mode MOSFET Transistors

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25 TEMIC

ND2012L

N-Channel Depletion-Mode MOSFET Transistors

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80 TEMIC

ND2012L-18

Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

ND2012L-18

Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,

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0 TEMIC

ND2012L18-1

Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

ND2012L18-2

Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

ND2012L-1TR1

Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

ND2012LTA

Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,

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0 TEMIC

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