LSK376-T [INFINEON]

Hyper ARGUS LED Hyper-Bright, 3 mm T1 LED, Non Diffused; 超ARGUS LED超高亮, 3毫米T1 LED,不扩散
LSK376-T
型号: LSK376-T
厂家: Infineon    Infineon
描述:

Hyper ARGUS LED Hyper-Bright, 3 mm T1 LED, Non Diffused
超ARGUS LED超高亮, 3毫米T1 LED,不扩散

光电 静态存储器
文件: 总7页 (文件大小:368K)
中文:  中文翻译
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Hyper ARGUS® LED  
Hyper-Bright, 3 mm (T1) LED, Non Diffused  
LS K376, LA K376, LO K376  
LY K376  
Besondere Merkmale  
eingefärbtes, klares Gehäuse  
Kunststoffgehäuse mit spezieller Formgebung  
bei Einsatz eines äußeren Reflektors zur Hintergrundbe-  
leuchtung von Leuchtfeldern und LCD-Anzeigen geeignet.  
zur Direkteinkopplung in Lichtleiterflächen geeignet  
gleichmäßige Ausleuchtung einer Streuscheibe (Weiß-  
druck) vor dem äußeren Reflektor  
Lötspieße mit Aufsetzebene  
gegurtet lieferbar  
Störimpulsfest nach DIN 40839  
Hinweis: Bei farbigen Streuscheiben muß die spektrale  
Transmission an die von der LED emittierte Wellenlänge  
angepaßt werden.  
Features  
colored, clear package  
plasic package with a special design  
in connection with an additional, custom  
built reflector suitable for backlighting of display panels  
for optical coupling into light pipes  
uniform illumination of a diffuser screen in front of the  
custom built reflector  
solder leads with stand-off  
available taped on reel  
load dump resistant acc. to DIN 40839  
Note: If the diffuser screen is tinted, the spectral  
transmission must be adjusted to the wavelength  
emitted by the LED.  
Semiconductor Group  
1
11.96  
LS K376, LA K376, LO K376, LY K376  
Typ  
Type  
Emissionsfarbe Gehäusefarbe  
Lichtstrom  
Luminous Flux  
IF = 20 mA  
ΦV (mlm)  
Bestellnummer  
Ordering Code  
Color of  
Color of  
Package  
Emission  
LS K376-QT  
LS K376-R  
LS K376-S  
LS K376-T  
LS K376-RU  
super-red  
amber  
colorless clear  
colorless clear  
colorless clear  
colorless clear  
63 ... 500  
100 ... 200  
160 ... 320  
250 ... 500  
100 ... 800  
Q62703-Q3467  
Q62703-Q3468  
Q62703-Q3469  
Q62703-Q3470  
Q62703-Q3471  
LA K376-RU  
LA K376-S  
LA K376-T  
LA K376-U  
LA K376-SV  
100 ... 800  
160 ... 320  
250 ... 500  
400 ... 800  
160 ... 1250  
Q62703-Q3735  
Q62703-Q3737  
Q62703-Q3738  
Q62703-Q3739  
Q62703-Q3736  
LO K376-RU  
LO K376-S  
LO K376-T  
LO K376-U  
LO K376-SV  
orange  
yellow  
100 ... 800  
160 ... 320  
250 ... 500  
400 ... 800  
160 ... 1250  
Q62703-Q3472  
Q62703-Q3473  
Q62703-Q3474  
Q62703-Q3475  
Q62703-Q3476  
LY K376-RU  
LY K376-S  
LY K376-T  
LY K376-U  
LY K376-SV  
100 ... 800  
160 ... 320  
250 ... 500  
400 ... 800  
160 ... 1250  
Q62703-Q3477  
Q62703-Q3478  
Q62703-Q3479  
Q62703-Q3480  
Q62703-Q3481  
Streuung des Lichtstromes in einer Verpackungseinheit ΦV max / ΦV min 2.0.  
Luminous flux ratio in one packaging unit ΦV max / ΦV min 2.0.  
Semiconductor Group  
2
LS K376, LA K376, LO K376, LY K376  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS, LO, LA LY  
Betriebstemperatur  
Operating temperature range  
T
– 55 … + 100  
˚C  
˚C  
˚C  
mA  
A
op  
Lagertemperatur  
Storage temperature range  
T
stg  
– 55 … + 100  
+ 100  
Sperrschichttemperatur  
Junction temperature  
T
j
Durchlaßstrom  
Forward current  
IF  
30  
20  
Stoßstrom  
IFM  
to be defined  
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
3
V
Verlustleistung  
Power dissipation  
TA 25 ˚C  
P
tot  
80  
55  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Luft  
Junction / air  
Rth JA  
500  
K/W  
Semiconductor Group  
3
LS K376, LA K376, LO K376, LY K376  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LA  
LO  
LY  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 20 mA  
(typ.) λpeak  
(typ.)  
645  
622  
615  
16  
610  
605  
16  
591  
nm  
nm  
nm  
Dominantwellenlänge  
Dominant wavelength  
IF = 20 mA  
(typ.) λdom  
(typ.)  
632  
16  
587  
15  
Spektrale Bandbreite bei 50% Irel max  
Spectral bandwidth at 50% Irel max  
IF = 20 mA  
(typ.) λ  
(typ.)  
Durchlaßspannung  
Forward voltage  
IF = 20 mA  
(typ.) VF  
(max.) VF  
2.0  
2.6  
2.0  
2.6  
2.0  
2.6  
2.0  
2.6  
V
V
Sperrstrom  
Reverse current  
VR = 3 V  
(typ.) IR  
(max.) IR  
0.01 0.01 0.01  
10 10 10  
0.01  
10  
µA  
µA  
Temperaturkoeffizient von λdom (IF = 20 mA)  
Temperature coefficient of λdom (IF = 20 mA)  
TC  
0.014 0.062 0.067 0.096 nm/K  
0.14 0.13 0.13 0.13 nm/K  
λ
λ
Temperaturkoeffizient von λpeak  
,
TC  
IF = 20 mA  
Temperature coefficient of λpeak  
IF = 20 mA  
(typ.)  
(typ.)  
,
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TC  
Temperature coefficient of VF, IF = 20 mA (typ.)  
– 1.95 – 1.78 – 1.67 – 2.51 mV/K  
V
Semiconductor Group  
4
LS K376, LA K376, LO K376, LY K376  
Relative spektrale Emission Φrel = f (λ), TA = 25 ˚C, IF = 20 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
Abstrahlcharakteristik Φrel = f (ϕ)  
Radiation characteristic  
Semiconductor Group  
5
LS K376, LA K376, LO K376, LY K376  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 ˚C  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
I = f (TA)  
F
Relativer Lichtstrom ΦV/ΦV (20 mA) = f (IF)  
Relative luminous flux  
TA = 25 ˚C  
Relativer Lichtstrom ΦV / ΦV(25˚C ) = f (TA)  
Relative luminous flux  
I = 20 mA  
F
Semiconductor Group  
6
LS K376, LA K376, LO K376, LY K376  
Zulässige Impulsbelastbarkeit IF = f (tp)  
Permissible pulse handling capability  
LS, LA, LO  
Zulässige Impulsbelastbarkeit IF = f (tp)  
Permissible pulse handling capability  
LY  
Duty cycle D = parameter, TA = 25 ˚C  
Duty cycle D = parameter, TA = 25 ˚C  
Maßzeichnung  
Package Outlines  
(Maße in mm, wenn nicht anders angegeben)  
(Dimensions in mm, unless otherwise specified)  
Kathodenkennzeichnung:  
Cathode mark:  
Kürzerer Lötspieß  
Short solder lead  
Semiconductor Group  
7

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