LH1485AABTR [INFINEON]
Optoelectronic Device, SMD-6;
| 型号： | LH1485AABTR |
| 厂家： | 
Infineon |
| 描述： | Optoelectronic Device, SMD-6 光电 |
| 文件： | 总4页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LH1485AT/AAB/AABTR
Optically Coupled
High Speed MOSFET Drivers
FEATURES
Package Dimensions in Inches (mm)
• Fast Turn On
DIP
• Fast Turn Off
6
5
4
S
S'
Pin One ID.
• Low Input Current
• Isolation Test Voltage, 5300 VAC
• Flammability; UL94,VØ
2
1
3
RMS
.256 (6.50)
.248 (6.30)
1
2
3
4
5
6
.343 (8.70)
.335 (8.50)
AGENCY APPROVALS
.300 (7.62)
Typ.
• UL – File No. E52744
• BSI/BABT Cert. No. 7980
.039
(1.00)
Min.
.150 (3.81)
.130 (3.30)
APPLICATIONS
4° Typ.
18° Typ.
.150 (3.81)
.110 (2.79)
• Motor Drive Controls
• IGBT-predrivers
.020 (.051) Min.
.014 (.35)
.010 (.25)
.035 (0.90)
.031 (0.80)
.022 (0.55)
.018 (0.45)
.347 (8.82)
.300 (7.62)
• AC/DC Power Inverters
• See Application Note 56
.100 (2.54) Typ.
Pin one I.D.
SMD
.343 (8.71)
.335 (8.51)
DESCRIPTION
The LH1485 is a photovoltatic generator (optically cou-
pled) designed to drive highly capacitive loads such as
the gate of a power MOSFET transistor and at the same
time provide isolation and floating voltage supply capa-
bility. The coupler consists of a GaAlAs light emitting
diode as input control and a custom photo IC chip with
photodiode array (PDA) as output device. When the LED
is turned on, the emitted light produces a voltage in the
PDA. The output of the PDA is used to drive the gate of
a power MOSFET. The photo IC chip contains additional
circuitry to enhance the switching speeds, (both turn on
.256 (6.50)
.248 (6.30)
.050 (1.27) typ.
.395 (10.03)
.375 (9.63)
.052 (1.33)
.048 (1.22)
.300 (7.62)
typ.
3° to 7°
.039
(0.99)
min.
.150 (3.81)
.130 (3.30)
.0098 (.25)
.0040 (.10)
18°
4°
.012 (0.31)
.008 (0.20)
.040 (1.016)
.020 (0.508)
.100 (2.54)
.315 (8.00)
min.
turn off). The optocoupler is packaged in a 6 pin DIP.
Part Identification
Part Number
LH1485AT
Description
6-pin DIP
LH1485AAB
LH1485AABTR
6-pin SMD, Tubes
6-pin SMD, Tape and Reel
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
3–31
March 26, 2000-18
Absolute Maximum Ratings, T =25°C (except where noted)
A
Stresses in excess of the absolute Maximum Ratings can cause permanent
damage to the device. These are absolute stress ratings only. Functional oper-
ation of the device is not implied at these or any other conditions in excess of
those given in the operational sections of this document. Exposure to absolute
Maximum Ratings for extended periods of time can adversely affect reliability.
Emitter
Reverse Voltage ...........................................................................4.0 V
Forward Current .........................................................................60 mA
Peak Forward Current ...............................................................600 mA
Power Dissipation.....................................................................100 mW
Thermal Resistance.................................................................700°C/W
Detector
Breakdown Voltage (pin 5 to 6)....................................................300 V
Peak Input Current (pin 5 to 4)....................................................50 mA
Reverse Current (pin 5 to 6, V=100 V) .......................................200 nA
Power Dissipation (pin 5 to 4) ..................................................150 mW
Package
Insulation Thickness between Emitter and Detector...............≥0.4 mm
Isolation Test Voltage (1.0 s)............................................5300 VAC
Isolation Resistance
RMS
12
V =500 V, T =25°C..............................................................≥10
Ω
IO
A
11
V =500 V, T =100°C............................................................≥10
Ω
IO
A
Comparative Tracking Index per
DIN IEC 112/VDE 303, Part 1 ....................................................≥175
Total Power Dissipation ............................................................250 mW
Storage Temperature Range ......................................–55°C to +150°C
Operating Temperature Range...................................–55°C to +100°C
Junction Temperature..................................................................100°C
Soldering Temperature (max. 10 s,
dip soldering distance to seating plane >1.5 mm)..................260°C
Electrical Characteristics, T =25°C
A
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the
result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
Parameter
Symbol Min.
Typ.
Max.
Unit
Condition
Input — Emitter
LED Forward Voltage
LED Junction Capacitance
V
0.9
—
1.5
25
2.1
—
V
I =10 mA
F
F
C
pF
V =0 V, f=1.0 MHz
R
J
MOSFET Driver Output with External Biasing (see Figure 1 and Figure 3)
Zener Voltage (pin 4 to 6)
V
V
13
11
—
—
V
V
I =10 µA
ZT
Z
Dynamic Output Voltage (pin 4 to 6)
9.0
—
C =2000 pF, V =20 V,
L B
OUT
I =10 mA
F
Dynamic Output Current (pin 4 to 6)
I
5.0
15
—
—
mA
C =2000 pF, V =20 V,
L B
OUT
I =10 mA
F
—
C =2000 pF, V =20 V,
L B
I =40 mA
F
Dynamic Output Resistance
Turn-on Time
Sourcing (pin 4)
Sinking (pin 4)
R
—
—
—
300
20
—
Ω
I =10 mA
F
OUT
—
—
µs
t
t
3.5
5.0
C =2000 pF, I =40 mA
on
L
F
OUT
Measure at V
=5.0 V,
V =20 V
B
Turn-off Time
—
3.5
5.0
µs
C =2000 pF, I =40 mA
off
L
F
OUT
Measure at V
=2.0 V,
V =20 V
B
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
LH1485AT/AAB/AABTR
March 26, 2000-18
3–32
Parameter
Symbol Min.
Typ.
Max.
Unit
Condition
MOSFET Driver Output without External Biasing (see Figure 2 and Figure 3)
Output Open Circuit Voltage (pin 4 to 6)
Output Short Circuit Current (pin 4 to 6)
V
8.0
2.1
8.4
—
10
—
V
I =10 mA
F
OC
I
4.0
16
—
µA
I =10 mA
F
SC
—
Dynamic Output Resistance Sinking (pin 4)
Turn-on Time
R
20
—
Ω
I =10 mA
F
OUT
t
—
650
1000
µs
C =2000 pF
L
on
(see Figure 3)
Measure at V
=5.0 V,
=2.0 V,
OUT
I =40 mA
F
Turn-off Time
t
—
3.0
5.0
µs
C =2000 pF
L
off
(see Figure 3)
Measure at V
OUT
I =40 mA
F
MOSFET Driver Output Switching Speed (see Figure 3, Figure 4, Figure 5)
Rise time
t
t
t
t
—
—
—
—
500
3.5
300
3.5
—
—
—
—
ns
µs
ns
µs
r
M1 Cgs=2000 pF,
Turn-on Time
on
f
V =50 V
S
Measure at 90%–10% M1
Fall time
V
DS
(see Figure 4)
Turn-off Time
off
Package Isolation Characteristics
Input-Output CMRR
Coupling Capacitance
dv/dt
—
—
15 kV
1.0
—
—
V/µs
V
=1000 V
CM
C
pF
f=1.0 MHz
IO
Figure 1. Switching Time Measurement With External
Voltage Bias
Figure 2. Switching Time Measurement Without Voltage
Bias
5
1
5
B
1
B
I
I
F
F
Photo
diode
array
Photo
4
Vo
Vo
4
6
diode
array
2
2
3
V
B
C
C
L
L
6
3
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
LH1485AT/AAB/AABTR
March 26, 2000-18
3–33
Figure 3. Switching Time Measurement
t
on
V
out
5.0 V
2.0 V
t
t
off
I
LED
t
Figure 4. LH1485 Connected in DC Load Switching Configuration
5
1
+5.0 V
100 Ω
M1
Load
Photo
diode
array
4
2
1.0 kΩ
2000 pF
300 V
V
S
2N2222
6
3
Figure 5. LH1485 Connected in AC Load Switching Configuration
+5.0 V
100 Ω
5
4
1
ac
1.0 kΩ
M1
Photo
diode
array
2N2222
2
2000 pF
300V
M2
6
3
ac
Load
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
LH1485AT/AAB/AABTR
March 26, 2000-18
3–34
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