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ISP26DP06NMS [INFINEON]

OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on). It is available in logic level.;
ISP26DP06NMS
型号： ISP26DP06NMS
厂家： Infineon    Infineon
描述：

OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on). It is available in logic level.
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ISP26DP06NMS  
MOSFET  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
PG-SOT223-3  
Features  
•ꢀP-Channel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀNormalꢀLevel  
•ꢀEnhancementꢀmode  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Drain  
Pin 2  
Gate  
Pin 1  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
Source  
Pin 3  
VDS  
-60  
V
RDS(on),max  
ID  
260  
mΩ  
A
-1.9  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
ISP26DP06NMS  
PG-SOT223-3  
26DP06NS  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
VGS=-10ꢀV,ꢀTA=25ꢀ°C,  
RTHJA=70ꢀ°C/W  
Continuous drain current1)  
Continuous drain current1)  
ID  
ID  
-
-
-
-1.9  
A
VGS=-10ꢀV,ꢀTA=100ꢀ°C,  
RTHJA=70ꢀ°C/W  
-
-1.2  
A
Pulsed drain current2)  
Avalanche energy, single pulse3)  
ID,pulse  
EAS  
-
-
-
-
-7.6  
257  
20  
A
TA=25ꢀ°C  
-
mJ  
V
ID=-1.9ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
5.0  
1.8  
TS=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=70ꢀ°C/W1)  
IEC climatic category; DIN IEC 68-1:  
55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - soldering  
point  
RthJS  
RthJA  
-
-
-
25  
°C/W -  
°C/W -  
Device on PCB,  
-
70  
6 cm² cooling area1)  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) See Diagram 3 for more detailed information  
3) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
-60  
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA  
VDS=VGS,ꢀID=-270ꢀµA  
-2.1  
-3  
-4  
-
-
-0.1  
-10  
-1  
-100  
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IGSS  
RDS(on)  
RG  
-
-
-
-
-10  
189  
5
-100  
VGS=-20ꢀV,ꢀVDS=0ꢀV  
260  
mΩ VGS=-10ꢀV,ꢀID=-1.9ꢀA  
-
-
Ω
-
Transconductance  
gfs  
3.1  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-1.9ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
420  
62  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
18  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
5
-
-
-
-
ns  
ns  
ns  
ns  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,  
RG,ext=1.6ꢀΩ  
7
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
15  
5
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-1.9ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
-1.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-1.9ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
-1.2  
-3.8  
Qsw  
-4.5  
Gate charge total  
Qg  
-10.8  
-4.6  
Gate plateau voltage  
Output charge  
Vplateau  
Qoss  
-5  
nC  
1) See diagram ,Gate charge waveforms, for gate charge parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-1.5  
-6  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TA=25ꢀ°C  
IS,pulse  
VSD  
trr  
A
TA=25ꢀ°C  
Diode forward voltage  
-0.81 -1.2  
V
VGS=0ꢀV,ꢀIF=-1.5ꢀA,ꢀTj=25ꢀ°C  
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs  
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
30  
-
-
ns  
nC  
Qrr  
-58  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
2.0  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
1.5  
1.0  
0.5  
0.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
TA[°C]  
TA[°C]  
Ptot=f(TA)  
ID=f(TA);ꢀ|VGS|≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
101  
102  
1 µs  
100 µs  
1 ms  
10 ms  
0.5  
100  
10-1  
10-2  
10-3  
10-4  
0.2  
101  
0.1  
100 ms  
0.05  
DC  
0.02  
100  
0.01  
single pulse  
10-1  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
-VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTA=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJA=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
16  
400  
-5 V  
-4.5 V  
-10 V  
-8 V  
14  
-7 V  
12  
300  
200  
100  
0
10  
-6 V  
-6 V  
-7 V  
-8 V  
-10 V  
8
6
4
-5 V  
2
-4.5 V  
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-VDSꢀ[V]  
-IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
8
600  
7
6
5
4
3
2
500  
400  
150 °C  
300  
200  
25 °C  
150 °C  
100  
0
1
25 °C  
0
0
1
2
3
4
5
6
7
5
6
7
8
9
10  
-VGSꢀ[V]  
-VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=-1.9ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
3.6  
1.6  
1.2  
0.8  
0.4  
0.0  
3.2  
2.8  
2.4  
2.0  
-2700 µA  
-270 µA  
-80  
-40  
0
40  
80  
120  
160  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=-1.9ꢀA,ꢀVGS=-10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
103  
101  
25 °C  
25 °C, max  
150 °C  
150 °C, max  
Ciss  
100  
10-1  
10-2  
102  
Coss  
Crss  
101  
0
10  
20  
30  
40  
50  
60  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
-VDSꢀ[V]  
-VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
101  
10  
-12 V  
-30 V  
-48 V  
8
6
4
2
0
100  
25 °C  
100 °C  
10-1  
125 °C  
101  
102  
103  
104  
0
2
4
6
8
10  
12  
tAVꢀ[µs]  
-Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=-1.9ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
68  
66  
64  
62  
60  
58  
56  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00180553  
0
SCALE  
MILLIMETERS  
MAX  
INCHES  
DIM  
MIN  
1.52  
-
MIN  
0.060  
-
MAX  
2.5  
A
A1  
A2  
b
1.80  
0.10  
1.70  
0.80  
3.10  
0.32  
6.70  
7.30  
3.70  
0.071  
0.004  
0.067  
0.031  
0.122  
0.013  
0.264  
0.287  
0.146  
0
2.5  
1,50  
0.059  
0.024  
0.116  
0.009  
0.248  
0.264  
0.130  
5mm  
0.60  
2.95  
0.24  
6.30  
6.70  
3.30  
b2  
c
EUROPEAN PROJECTION  
D
E
E1  
e
2.3 BASIC  
4.6 BASIC  
0.091 BASIC  
0.181 BASIC  
e1  
L
ISSUE DATE  
24-02-2016  
0.75  
1.10  
0.030  
0.043  
N
3
3
REVISION  
O
ꢀƒ  
ꢁꢀƒ  
ꢀƒ  
ꢁꢀƒ  
01  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223-3,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2019-03-25  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP26DP06NMS  
RevisionꢀHistory  
ISP26DP06NMS  
Revision:ꢀ2019-03-25,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2019-03-25  
Trademarks  
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(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
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Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2019-03-25  

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