ISC027N10NM6 [INFINEON]
正常电平 ISC027N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。;
| 型号： | ISC027N10NM6 |
| 厂家： | 
Infineon |
| 描述： | 正常电平 ISC027N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。 |
| 文件： | 总12页 (文件大小：1586K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISC027N10NM6
MOSFET
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
TDSON-8ꢀFLꢀ(enlargedꢀsourceꢀinterconnection)
8
7
6
5
Features
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
1
5
2
6
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀHighꢀavalancheꢀenergyꢀrating
7
3
4
8
4
•ꢀ175°Cꢀoperatingꢀtemperature
3
2
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020
1
Drain
Pin 5-8
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
*1
Gate
Pin 4
Source
Pin 1-3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1: Internal body diode
Parameter
Value
100
2.7
Unit
VDS
V
RDS(on),max
ID
mΩ
A
192
107
58
Qoss
nC
nC
nC
QGꢀ(0V...10V)
Qrrꢀ(100A/µs)
62
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISC027N10NM6
PG-TDSON-8 FL
027N10N6
-
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
192
136
124
23
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
VGS=8ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,TA=25°C,ꢀRthJA=50°C/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
768
50
A
A
TC=25ꢀ°C
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
-
TC=25ꢀ°C
EAS
VGS
-
1057 mJ
ID=19ꢀA,ꢀRGS=25ꢀΩ
-20
20
V
-
-
-
-
-
217
3.0
TC=25ꢀ°C
Power dissipation
Ptot
W
°C
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.34
0.69
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
-
-
20
50
Thermal resistance, junction - ambient,
6 cm² cooling area
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.3
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2.8
3.3
VDS=VGS,ꢀID=116ꢀµA
-
-
0.1
10
1.0
100
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C1)
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
2.3
2.8
2.7
3.2
VGS=10ꢀV,ꢀID=50ꢀA
VGS=8ꢀV,ꢀID=25ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
0.6
1.2
85
1.8
-
Ω
-
Transconductance
42.5
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
4300 5500 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
960
16
1200 pF
24
-
pF
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
11
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
4.5
24
-
-
-
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
5.5
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
19
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
25
15
14.4
-
Gate to source charge1)
Gate charge at threshold1)
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
12
9.6
Qsw
16.9
58
Gate charge total1)
Qg
72.5
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
4.5
53
-
nC
nC
107
134
VDS=50ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
192
768
1.0
69
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.81
46
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=1000ꢀA/µs
VR=50ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=1000ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
ns
nC
Qrr
trr
62
93
25
38
Qrr
305
458
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
240
200
175
150
125
100
75
200
160
120
80
50
40
25
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
single pulse
0.01
0.02
1 µs
10 µs
0.05
0.1
0.2
0.5
102
101
100 µs
1 ms
100
10-1
10-2
10 ms
100
DC
10-1
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1000
7
6 V
7 V
8 V
6
5
4
3
2
1
0
10 V
800
600
400
200
0
8 V
10 V
7 V
6 V
5 V
4.5 V
0
1
2
3
4
5
0
100
200
300
400
500
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
350
7
300
250
200
150
100
6
175 °C
5
4
3
2
1
0
25 °C
175 °C
50
25 °C
0
0
1
2
3
4
5
6
7
5
6
7
8
9
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.6
1.2
0.8
0.4
0.0
1160 µA
116 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
Ciss
175 °C, max
103
102
101
100
Coss
102
101
100
Crss
0
20
40
60
80
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
20 V
50 V
80 V
8
6
4
2
0
25 °C
101
100 °C
150 °C
100
100
101
102
103
0
10
20
30
40
50
60
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=25ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
112
110
108
106
104
102
100
98
96
94
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=10ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B000193699
REVISION
04
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.26
4.80
3.70
0.00
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.42
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.69
0.45
0.90
0.69
ISSUE DATE
05.11.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ100ꢀV
ISC027N10NM6
PG-TDSON-8FL: Recommended Boardpads & Apertures
Figure 2 Outline Boardpads (TDSON-8 FL)
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2023-02-14
OptiMOSTM 6 Power-Transistor , 100 V
ISC027N10NM6
Revision History
ISC027N10NM6
Revision: 2023-02-14, Rev. 2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2021-07-05
Release of final version
Updated ID Pulse at Tc
Update SOA Diagram
2023-01-05
2023-02-14
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
12
Rev. 2.2, 2023-02-14
相关型号：
ISC030N10NM6
正常电平 ISC030N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
INFINEON
ISC030N12NM6
This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.04 mOhm on-resistance. ISC030N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
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