IRSF3021 [INFINEON]

FULLY PROTECTED POWER MOSFET SWITCH(Vds(50V), Rds(on)=200mohm); 充分保护功率MOSFET开关(VDS ( 50V ) , RDS(ON) = 200mohm )
IRSF3021
型号: IRSF3021
厂家: Infineon    Infineon
描述:

FULLY PROTECTED POWER MOSFET SWITCH(Vds(50V), Rds(on)=200mohm)
充分保护功率MOSFET开关(VDS ( 50V ) , RDS(ON) = 200mohm )

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文件: 总6页 (文件大小:276K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Previous Datasheet  
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Provisional Data Sheet No. PD 6.068B  
IRSF3021  
FULLY PROTECTED POWER MOSFET SWITCH  
Features  
Controlled Slew Rate Reduces EMI  
V
R
50 V  
ds(clamp)  
Over Temperature Protection with Auto-Restart  
Linear Current-Limit Protection  
Active Drain-to-Source Clamp  
ESD Protection  
Compatible with Standard Power MOSFET  
Low Operating Input Current  
Monolithic Construction  
200 mΩ  
3.0 A  
165oC  
ds(on)  
lim  
I
T
j(sd)  
AS  
Logic Level Input Threshold  
E
200 mJ  
Description  
The IRSF3021 Lamp and DC Motor Driver is a fully protected three  
terminal monolithic SMART POWER MOSFET that features current  
limiting,over-temperatureprotection,gate-to-sourceESDprotection  
andgate-to-drainclampforover-voltageprotection.  
Applications  
Cabin Lighting  
Airbag System  
Programmable Logic Controller  
DC Motor Drive  
The on-chip protection circuit limits the drain current in the on-state.  
The over-temperature circuitry turns off the POWER MOSFET when  
the junction temperature exceeds 165°C. The device restarts automati-  
cally once it has cooled down below the reset temperature.  
Available Packages  
The IRSF3021 is specifically designed for driving loads that require  
overload protection and in-rush current control while operating in auto-  
motiveandindustrialenvironments.Targetedapplicationsinclude  
resistive loads such as lamps or capacitive loads such as airbag squibs  
and DC motor drives.  
IRSF3021  
(TO-220AB)  
IRSF3021L  
(SOT-223)  
IRSF3021 Block Diagram  
Drain  
Input  
Source  
To Order  
 
 
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IRSF3021  
Absolute Maximum Ratings  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless  
otherwisespecified.)  
Minimum Maximum Units Test Conditions  
V
V
Continuous Drain to Source Voltage  
Continuous Input Voltage  
—
-0.3  
—
50  
ds, max  
V
8
in, max  
I
ds  
Continuous Drain Current  
self limited  
30  
P
E
Power Dissipation  
—
W
T 25°C  
c
d
Unclamped Single Pulse Inductive Energy  
Electrostatic Discharge Voltage (Human Body Model)  
Electrostatic Discharge Voltage (Machine Model)  
Operating Junction Temperature Range  
Storage Temperature Range  
—
200  
mJ  
AS  
V
esd1  
—
4000  
1000  
self-limited  
175  
1000pF. 1.5kΩ  
200pF, 0Ω  
V
V
—
esd2  
Jop  
Stg  
L
T
T
T
-40  
-40  
—
°C  
Lead Temperature (Soldering, 10 seconds)  
300  
Static Electrical Characteristics  
(Tc = 25°C unless otherwise specified.)  
Minimum Typical Maximum Units Test Conditions  
V
Drain to Source Clamp Voltage  
Drain to Source On Resistance  
Drain to Source Leakage Current  
Input Threshold Voltage  
Input Supply Current (Normal Operation)  
Input Supply Current (Protection Mode)  
Input Clamp Voltage  
50  
—
—
1.0  
—
—
9
56  
155  
—
2.0  
100  
500  
10  
65  
200  
250  
3.0  
300  
—
I
V
V
V
V
V
= 6A, t = 700 µS  
= 5V, I = 2A  
ds  
= 40V, V = 0V  
in  
= V , I + I = 10mA  
in ds in  
= 5V  
= 5V  
= 1mA  
ds,clamp  
ds  
in  
ds  
ds  
in  
in  
p
V
R
mΩ  
ds(on)  
I
µA  
V
µA  
µA  
V
dss  
V
th  
I
I
i,on  
i,off  
V
V
—
I
in  
in, clamp  
sd  
Body-Drain Diode Forward Drop➂  
—
1.5  
—
V
I = -2A, R = 1kΩ  
ds in  
Thermal Characteristics  
Minimum Typical Maximum Units Test Conditions  
RΘ  
RΘ  
RΘ  
RΘ  
JunctiontoCase  
JunctiontoAmbient  
JunctiontoPCB  
—
—
—
—
—
—
—
—
4
jc  
°C/W TO-220AB  
60  
40  
60  
jA  
jc  
°C/W SOT-223  
Junction to PCB➀  
jA  
SwitchingElectricalCharacteristics  
(VCC = 14V, Resistive Load (RL) = 10, Rin= 100Ω. Specifications measured at TC= 25°C unless otherwise specified.)  
Minimum Typical Maximum Units Test Conditions  
t
t
t
t
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
OutputPositiveSlewRate  
OutputPositiveSlewRate  
—
—
—
—
-4  
-4  
10  
30  
20  
15  
—
50  
80  
60  
50  
4
V
V
V
V
V
V
= 0V to 5V, 50% to 90%  
= 0V to 5V, 90% to 10%  
= 0V to 5V, 50% to 10%  
= 0V to 5V, 10% to 90%  
= 0V to 5V, +dVds/dt  
= 0V to 5V, -dVds/dt  
don  
in  
in  
in  
in  
in  
in  
r
µs  
doff  
f
SR  
SR  
V/µs  
—
4
To Order  
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Index  
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IRSF3021  
Protection Characteristics  
(TC= 25 °C unless otherwise specified. Min/Max specifications are for TC= -40°C to TC = +125°C unless otherwise  
specified.)  
Minimum Typical Maximum Units Test Conditions  
I
T
V
Current Limit  
3.0  
155  
—
5.5  
165  
3
8.0  
—
—
—
—
—
A
°C  
V
Vin = 5V, V = 14V  
ds(sd)  
DS  
Over Temperature Shutdown Threshold  
Min. Input Voltage for Over-temp function  
Current Limit Response Time  
Peak Short Circuit Current  
Vin = 5V, Ids = 2A  
j(sd)  
protect  
Iresp  
t
I
t
—
—
TBD  
10  
µs  
A
peak  
Over-Temperature Response Time  
—
TBD  
µs  
Tresp  
Notes:  
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer  
toInternationalRectifierApplicationNoteAN-994.  
EAS is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25°C.  
Input current must be limited to less than 5mA with a 1kresistor in series with the input when the Body-Drain Diode  
is forward biased.  
To Order  
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Index  
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IRSF3021  
Case Outline — SOT-223 (IRSF3021L)  
MILLIMETERS  
INCHES  
DIM  
A
B
B1  
C
D
MIN  
1.55  
0.65  
2.95  
0.25  
6.30  
3.30  
MAX  
1.80  
0.85  
3.15  
0.35  
6.70  
3.70  
MIN  
MAX  
0.071  
0.033  
0.124  
0.014  
0.264  
0.146  
0.061  
0.026  
0.116  
0.010  
0.248  
0.130  
E
e
e1  
H
L
L1  
Θ
2.30 BSC  
4.60 BSC  
.0905 BSC  
0.181 BSC  
6.71  
0.02  
7.29  
0.91  
0.10  
0.287  
0.0006  
0.264  
0.036  
0.004  
10° MAX  
10° MAX  
LEADASSIGNMENTS  
1. Gate  
NOTES:  
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982  
2. Controlling dimension: INCH  
3. Dimensions do not include lead flash  
4. Conforms to JEDEC outline TO-261AA  
2. Drain  
3. Source  
4. Drain  
To Order  
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Index  
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IRSF3021  
Tape and Reel — SOT-223 (IRSF3021L)  
NOTES:  
1. Controlling dimension: MILLIMETER  
2. Conforms to outline EIA-481 and EIA-541  
3. Each 330.00 (13.00) reel contains 2,500 devices.  
NOTES:  
1. Controlling dimension: MILLIMETER  
2. Conforms to outline EIA-481-1  
3. Dimension measured at hub  
4. Includes flange distortion at outer edge  
To Order  
Previous Datasheet  
Index  
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IRSF3021  
Case Outline — TO-220AB (IRSF3021)  
LEADASSIGNMENTS  
NOTES:  
1. Gate  
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982  
2. Controlling dimension: INCH  
2. Drain  
3. Source  
4. Drain  
3. Dimensions shown are in millimeters (inches)  
4. Conforms to JEDEC outline TO-251AA  
5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371  
http://www.irf.com/  
Data and specifications subject to change without notice.  
12/96  
To Order  

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