IRSF3021 [INFINEON]
FULLY PROTECTED POWER MOSFET SWITCH(Vds(50V), Rds(on)=200mohm); 充分保护功率MOSFET开关(VDS ( 50V ) , RDS(ON) = 200mohm )型号: | IRSF3021 |
厂家: | Infineon |
描述: | FULLY PROTECTED POWER MOSFET SWITCH(Vds(50V), Rds(on)=200mohm) |
文件: | 总6页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD 6.068B
IRSF3021
FULLY PROTECTED POWER MOSFET SWITCH
Features
■ Controlled Slew Rate Reduces EMI
V
R
50 V
ds(clamp)
■ Over Temperature Protection with Auto-Restart
■ Linear Current-Limit Protection
■ Active Drain-to-Source Clamp
■ ESD Protection
■ Compatible with Standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
200 mΩ
3.0 A
165oC
ds(on)
lim
I
T
j(sd)
AS
■ Logic Level Input Threshold
E
200 mJ
Description
The IRSF3021 Lamp and DC Motor Driver is a fully protected three
terminal monolithic SMART POWER MOSFET that features current
limiting,over-temperatureprotection,gate-to-sourceESDprotection
andgate-to-drainclampforover-voltageprotection.
Applications
■
■
■
■
Cabin Lighting
Airbag System
Programmable Logic Controller
DC Motor Drive
The on-chip protection circuit limits the drain current in the on-state.
The over-temperature circuitry turns off the POWER MOSFET when
the junction temperature exceeds 165°C. The device restarts automati-
cally once it has cooled down below the reset temperature.
Available Packages
The IRSF3021 is specifically designed for driving loads that require
overload protection and in-rush current control while operating in auto-
motiveandindustrialenvironments.Targetedapplicationsinclude
resistive loads such as lamps or capacitive loads such as airbag squibs
and DC motor drives.
IRSF3021
(TO-220AB)
IRSF3021L
(SOT-223)
IRSF3021 Block Diagram
Drain
Input
Source
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IRSF3021
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless
otherwisespecified.)
Minimum Maximum Units Test Conditions
V
V
Continuous Drain to Source Voltage
Continuous Input Voltage
-0.3
50
ds, max
V
8
in, max
I
ds
Continuous Drain Current
self limited
30
P
E
Power Dissipation
W
T ≤ 25°C
c
d
Unclamped Single Pulse Inductive Energy
Electrostatic Discharge Voltage (Human Body Model)
Electrostatic Discharge Voltage (Machine Model)
Operating Junction Temperature Range
Storage Temperature Range
200
mJ
AS
V
esd1
4000
1000
self-limited
175
1000pF. 1.5kΩ
200pF, 0Ω
V
V
esd2
Jop
Stg
L
T
T
T
-40
-40
°C
Lead Temperature (Soldering, 10 seconds)
300
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
V
Drain to Source Clamp Voltage
Drain to Source On Resistance
Drain to Source Leakage Current
Input Threshold Voltage
Input Supply Current (Normal Operation)
Input Supply Current (Protection Mode)
Input Clamp Voltage
50
1.0
9
56
155
2.0
100
500
10
65
200
250
3.0
300
I
V
V
V
V
V
= 6A, t = 700 µS
= 5V, I = 2A
ds
= 40V, V = 0V
in
= V , I + I = 10mA
in ds in
= 5V
= 5V
= 1mA
ds,clamp
ds
in
ds
ds
in
in
p
V
R
mΩ
ds(on)
I
µA
V
µA
µA
V
dss
V
th
I
I
i,on
i,off
V
V
I
in
in, clamp
sd
Body-Drain Diode Forward Drop➂
1.5
V
I = -2A, R = 1kΩ
ds in
Thermal Characteristics
Minimum Typical Maximum Units Test Conditions
RΘ
RΘ
RΘ
RΘ
JunctiontoCase
JunctiontoAmbient
JunctiontoPCB
4
jc
°C/W TO-220AB
60
40
60
jA
jc
°C/W SOT-223
Junction to PCB➀
jA
SwitchingElectricalCharacteristics
(VCC = 14V, Resistive Load (RL) = 10Ω, Rin= 100Ω. Specifications measured at TC= 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
t
t
t
t
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
OutputPositiveSlewRate
OutputPositiveSlewRate
-4
-4
10
30
20
15
50
80
60
50
4
V
V
V
V
V
V
= 0V to 5V, 50% to 90%
= 0V to 5V, 90% to 10%
= 0V to 5V, 50% to 10%
= 0V to 5V, 10% to 90%
= 0V to 5V, +dVds/dt
= 0V to 5V, -dVds/dt
don
in
in
in
in
in
in
r
µs
doff
f
SR
SR
V/µs
4
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IRSF3021
Protection Characteristics
(TC= 25 °C unless otherwise specified. Min/Max specifications are for TC= -40°C to TC = +125°C unless otherwise
specified.)
Minimum Typical Maximum Units Test Conditions
I
T
V
Current Limit
3.0
155
5.5
165
3
8.0
A
°C
V
Vin = 5V, V = 14V
ds(sd)
DS
Over Temperature Shutdown Threshold
Min. Input Voltage for Over-temp function
Current Limit Response Time
Peak Short Circuit Current
Vin = 5V, Ids = 2A
j(sd)
protect
Iresp
t
I
t
TBD
10
µs
A
peak
Over-Temperature Response Time
TBD
µs
Tresp
Notes:
①When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
toInternationalRectifierApplicationNoteAN-994.
②EAS is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25°C.
③Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode
is forward biased.
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IRSF3021
Case Outline SOT-223 (IRSF3021L)
MILLIMETERS
INCHES
DIM
A
B
B1
C
D
MIN
1.55
0.65
2.95
0.25
6.30
3.30
MAX
1.80
0.85
3.15
0.35
6.70
3.70
MIN
MAX
0.071
0.033
0.124
0.014
0.264
0.146
0.061
0.026
0.116
0.010
0.248
0.130
E
e
e1
H
L
L1
Θ
2.30 BSC
4.60 BSC
.0905 BSC
0.181 BSC
6.71
—
0.02
7.29
0.91
0.10
0.287
—
0.0006
0.264
0.036
0.004
10° MAX
10° MAX
LEADASSIGNMENTS
1. Gate
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
3. Dimensions do not include lead flash
4. Conforms to JEDEC outline TO-261AA
2. Drain
3. Source
4. Drain
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IRSF3021
Tape and Reel SOT-223 (IRSF3021L)
NOTES:
1. Controlling dimension: MILLIMETER
2. Conforms to outline EIA-481 and EIA-541
3. Each 330.00 (13.00) reel contains 2,500 devices.
NOTES:
1. Controlling dimension: MILLIMETER
2. Conforms to outline EIA-481-1
3. Dimension measured at hub
4. Includes flange distortion at outer edge
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IRSF3021
Case Outline TO-220AB (IRSF3021)
LEADASSIGNMENTS
NOTES:
1. Gate
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
2. Drain
3. Source
4. Drain
3. Dimensions shown are in millimeters (inches)
4. Conforms to JEDEC outline TO-251AA
5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/96
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