IRLR8103PBF [INFINEON]
Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3;
| 型号： | IRLR8103PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93838
PD - 93839
IRLR8103/IRLR8503
Provisional Data Sheet
HEXFET® Chipset for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
D
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
Description
G
These new devices employ advanced HEXFET® power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge.The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
D-Pak
S
Both the IRLR8103 and IRLR8503 have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including RDS(on), gate charge
and Cdv/dt-induced turn-on immunity.The IRLR8103 offers
particulary low RDS(on) and high Cdv/dt immunity for
synchronous FET applications.The IRLR8503 offers an
extremely low combination of Qsw & RDS(on) for reduced
losses in control FET applications.
DEVICE RATINGS (typ.)
IRLR8103 IRLR8503
VDS
RDS
QG
30V
30V
6 mΩ
12 mΩ
15 nC
5.4 nC
23 nC
(on)
45 nC
20.3 nC
23 nC
Qsw
The package is designed for vapor phase, infrared,
convection, or wave soldering techniques. Power
dissipation of greater than 80W is possible in a typical PCB
mount application.
Qoss
Absolute Maximum Ratings
Parameter
Symbol
IRLR8103
IRLR8503
Units
Drain-Source Voltage
VDS
VGS
ID
30
V
Gate-Source Voltage
±20
Continuous Drain or Source TA = 25°C
89ꢀ
61ꢀ
350
89
49ꢀ
34ꢀ
196
62
Current (VGS ≥ 10V)
Pulsed Drain Current
Power Dissipation
TL = 90°C
A
IDM
PD
TA = 25°C
TL = 90°C
W
42
30
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
TJ,TSTG
IS
–55 to 150
°C
A
89ꢀ
49ꢀ
ISM
350
196
Thermal Resistance
Parameter
Max.
Units
°C/W
°C/W
Maximum Junction-to-Ambient PCB
Maximum Junction-to-Case
RθJA
RθJC
50
1.4
2.0
Revised 1/13/00
www.irf.com
1
IRLR8103/IRLR8503
Electrical Characteristics
Parameter
IRLR8103
Min Typ Max Min Typ Max Units
IRLR8503
Conditions
Drain-to-Source
Breakdown Voltage*
BVDSS
RDS(ON)
30
–
–
30
–
–
V
VGS = 0V, ID = 250µA
Static Drain-Source
–
6
7.0
12
16
mΩ VGS = 10V, ID = 15A
mΩ VGS = 4.5V, ID = 15A
on Resistance*
Gate Threshold Voltage*
–
2.0
7
–
8.5
–
14
–
18
–
VGS(th)
IDSS
1.0
–
V
VDS = VGS,ID = 250µA
Drain-Source Leakage
Current*
–
–
–
–
30
–
–
30
VDS = 24V, VGS = 0
150
–
150
µA VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current*
IGSS
–
–
±100
–
–
±100 nA VGS = ±20V
Total Gate Chg Cont FET*
Total Gate Chg Sync FET*
QG
–
–
–
50
45
17
–
–
–
–
–
–
15
13
–
–
–
VGS=5V, ID=15A, VDS=16V
QG
VGS = 5V, VDS< 100mV
VDS = 16V, ID = 15A
Pre-Vth
QGS1
3.7
Gate-Source Charge
Post-Vth
QGS2
–
4.3
–
–
1.3
–
nC
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)*
Output Charge*
QGD
Qsw
Qoss
RG
–
–
–
–
–
–
–
–
–
–
–
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.1
5.4
–
–
–
–
–
–
–
–
–
–
–
20.3
23
23
VDS = 16V, VGS = 0
VDD = 16V, ID = 15A
Gate Resistance
Turn-on Delay Time
Rise Time
1.5
2.0
Ω
td(on)
tr
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns VGS = 5V
Clamped Inductive Load
Turn-off Delay Time
FallTime
td (off)
tf
See test diagram Fig 19.
Input Capacitance
Output Capacitance
Ciss
Coss
pF VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter
Min Typ Max
Min Typ Max Units
Conditions
Diode Forward
Voltage*
VSD
Qrr
–
–
0.9
–
–
1.0
V
IS = 15A, VGS = 0V
Reverse Recovery
–
100
–
–
89
–
di/dt ~ 700A/µs
Charge
nC VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
–
77
–
–
75
–
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
ꢀ
Typ = measured - Qoss
Calculated continuous current based on maximum allowable
Junction temperature; packagle limitation current = 20A
Devices are 100% tested to these parameters.
*
2
www.irf.com
IRLR8103/IRLR8503
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIG NM ENTS
1 - GATE
1
2
3
0.51 (.020)
MIN.
2 - DRA IN
- B -
3 - SOURCE
4 - DRA IN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M
A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y 14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDE C OUTLINE TO-252AA.
DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP M AX. +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
EXAMPLE : THIS IS AN IRFR120
W ITH ASSEM BLY
A
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 9U1P
FIRST PORTION
OF PART NUMBER
IRFR
120
1P
9U
ASSEMBLY
SECOND PORTION
OF PART NUM BER
LOT CODE
www.irf.com
3
IRLR8103/IRLR8503
Tape & Reel Information
TO-252AA
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIR ECTIO N
FEED DIR ECTIO N
N O TES :
1. C O NTRO LLING D IM EN SIO N : M ILLIM ETER.
2. ALL D IM EN SIO N S ARE SH O W N IN M ILLIM ETERS ( INC HES ).
3. O U TLINE C O N FO RM S TO EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO N FO RM S TO EIA-481.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
11/98
4
www.irf.com
相关型号：
IRLR8103TR
Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103TRL
Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103TRLPBF
Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103TRPBF
Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103TRR
Power Field-Effect Transistor, 89A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103VHR
Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103VTR
Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103VTRL
Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRLR8103VTRLPBF
Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明