IRLML0060 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRLML0060 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLML0060TRPbF
HEXFET® Power MOSFET
VDSS
VGS
60
V
V
±16
RDS(on) max
(@ VGS = 10V)
92
m
m
RDS(on) max
(@ VGS = 4.5V)
116
G
D
S
Applications
Gate
Drain
Source
Load/System Switch
Features
Benefits
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1
results in
Environmentally Friendlier
Increased Reliability
Standard Pack
Form Quantity
Tape and Reel 3000
Base part number
Package Type
Orderable Part Number
IRLML0060TRPbF
Micro 3™ (SOT-23)
IRLML0060TRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
60
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
2.7
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2.1
11
A
PD @TA= 25°C
PD @TA= 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
0.80
0.01
W
mW/°C
VGS
TJ
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
± 16
-55 to + 150
°C
TSTG
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
Typ.
–––
–––
Max.
100
Units
RJA
RJA
°C/W
Junction-to-Ambient (t < 10s)
99
1
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IRLML0060TRPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ
–––
–––
1.0
98
78
116
92
VGS = 4.5V, ID = 2.2A
m
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
GS = 10V, ID = 2.7A
–––
2.5
20
V
VDS = VGS, ID = 25µA
––– –––
V
V
V
V
DS = 60V, VGS = 0V
DS = 60V,VGS = 0V,TJ = 125°C
GS = 16V
Drain-to-Source Leakage Current
µA
––– ––– 250
––– ––– 100
––– ––– -100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
GS = -16V
RG
gfs
Qg
Internal Gate Resistance
Forward Trans conductance
Total Gate Charge
–––
7.6
1.6
–––
––– –––
S
V
DS = 25V, ID = 2.7A
–––
–––
2.5
0.7
–––
–––
ID = 2.7A
nC
ns
Qgs
Gate-to-Source Charge
VDS = 30V
Qgd
td(on)
tr
td(off)
tf
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
1.3
5.4
6.3
6.8
4.2
–––
–––
–––
–––
–––
VGS = 4.5V
VDD = 30V
ID = 1.0A
RG = 6.8
V
GS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 290 –––
VGS = 0V
pF
Output Capacitance
–––
–––
37
21
–––
–––
VDS = 25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Continuous Source Current
(Body Diode)
IS
––– –––
1.6
11
A
V
Pulsed Source Current
(Body Diode)
ISM
––– –––
––– –––
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.3
21
20
TJ = 25°C,IS = 2.7A,VGS = 0V
–––
–––
14
13
ns TJ = 25°C ,VR = 30V, IF = 1.6A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
2
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IRLML0060TRPbF
100
10
1
100
10
VGS
10V
VGS
10V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
TOP
TOP
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
1
0.1
0.01
2.8V
2.8V
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
2.0
1.5
1.0
0.5
100
10
1
I
= 2.7A
= 10V
D
V
GS
T = 150°C
J
T = 25°C
J
V
= 25V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig. 4 Normalized On-Resistance
Fig. 3 Typical Transfer Characteristics
vs. Temperature
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IRLML0060TRPbF
10000
1000
100
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 2.7A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
V
= 48V
DS
DS
DS
= C + C
ds
gd
= 30V
= 12V
C
iss
6.0
C
oss
C
rss
4.0
2.0
10
0.0
0.1
1
10
100
0
1
2
3
4
5
6
7
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
1
10msec
T = 150°C
J
T = 25°C
J
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.2
0.4
SD
0.6
0.8
1.0
1.2
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig. 7 Typical Source-to-Drain Diode
Fig 8. Maximum Safe Operating Area
2016-12-20
Forward Voltage
4
IRLML0060TRPbF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRLML0060TRPbF
150
125
100
75
400
300
200
100
0
I
= 2.7A
D
Vgs = 4.5V
T = 125°C
J
Vgs = 10V
T = 25°C
J
50
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
2016-12-20
IRLML0060TRPbF
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
100
80
60
40
20
0
I
= 250µA
D
I
= 25µA
D
-75 -50 -25
0
25 50 75 100 125 150
1
10
100
1000
10000 100000
T , Temperature ( °C )
Time (sec)
J
Fig 15. Typical Threshold Voltage Vs.
Fig 16. Typical Power Vs. Time
Junction Temperature
7
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IRLML0060TRPbF
Micro3™ (SOT-23) Package Outline (Dimensions are shown in millimeters (inches))
DIMENSIONS
A
5
6
MILLIMETERS
MIN MAX
INCHES
MIN MAX
D
SYMBOL
A
A1
A2
b
0.89 1.12
0.035 0.044
A
3
0.01 0.10 0.0004 0.004
E
6
E1
A2
C
0.15 [0.006]
0.88 1.02
0.30 0.50
0.08 0.20
2.80 3.04
2.10 2.64
1.20 1.40
0.95 BSC
1.90 BSC
0.40 0.60
0.54 REF
0.25 BSC
0.035 0.040
0.012 0.020
0.003 0.008
0.110 0.120
0.083 0.104
0.047 0.055
0.037 BSC
0.075 BSC
0.016 0.024
0.021 REF
0.010 BSC
M
C B A
1
2
c
e
0.10 [0.004]
C
B
5
D
A1
e1
3X b
0.20 [0.008]
E
M
C B A
E1
e
NOTES:
e1
L
L1
L2
4
H
L1
L2
0
8
0
8
Recommended Footprint
c
NOTES:
0.972
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
0.950
2.742
0.802
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
1.900
Micro3™ (SOT-23/TO-236AB) Part Marking Information
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
8
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IRLML0060TRPbF
Micro3™Tape & Reel Information (Dimensions are shown in millimeters (inches))
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
9
2016-12-20
IRLML0060TRPbF
Qualification Information
Qualification Level
Consumer
(per JEDEC JESD47F) †
MSL1
Micro3™ (SOT-23)
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D) †
Yes
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Changed datasheet with Infineon logo - all pages.
Removed typo “Industrial” on Feature and Benefits Table on page1.
12/20/16
Corrected typo for Igss test condition from “VGS = 20V” to “VGS = 16V” on page 2.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
WARNINGS
Due to technical requirements products may
In addition, any information given in this contain dangerous substances. For information on
document is subject to customer’s compliance the types in question please contact your nearest
with its obligations stated in this document and Infineon Technologies office.
any applicable legal requirements, norms and
standards concerning customer’s products and
Except as otherwise explicitly approved by Infineon
any use of the product of Infineon Technologies in
Technologies in a written document signed by
customer’s applications.
Document reference
ifx1
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
10
2016-12-20
相关型号：
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The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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