IRLB8748 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRLB8748 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96231
IRLB8748PbF
HEXFET® Power MOSFET
Applications
l Optimized for UPS/Inverter Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS RDS(on) max
Qg
15nC
4.8m
30V
D
S
D
G
Benefits
TO-220AB
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
IRLB8748PbF
G
D
S
Gate
Drain
Source
l Lead-Free
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
30
Drain-to-Source Voltage
Gate-to-Source Voltage
V
± 20
V
GS
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
92
I
I
I
I
@ TC = 25°C
D
D
D
65
@ TC = 100°C
@ TC = 25°C
A
78
370
DM
75
38
Maximum Power Dissipation
P
P
@TC = 25°C
D
D
W
@TC = 100°C Maximum Power Dissipation
Linear Derating Factor
0.5
W/°C
-55 to + 175
T
T
Operating Junction and
J
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case)
10 lbf
in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
0.5
Max.
2.0
Units
RθJC
Junction-to-Case
RθCS
RθJA
–––
62
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
–––
Notes through are on page 9
www.irf.com
1
04/22/09
IRLB8748PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
RDS(on)
30
–––
–––
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
∆
V
DSS/ TJ
–––
–––
–––
1.35
–––
–––
–––
–––
–––
196
–––
–––
–––
–––
–––
–––
–––
21
––– mV/°C Reference to 25°C, ID = 1mA
3.8
5.5
1.8
-7.1
–––
–––
–––
–––
–––
15
4.8
6.8
VGS = 10V, ID = 40A
VGS = 4.5V, ID = 32A
Ω
m
VGS(th)
2.35
V
Gate Threshold Voltage
V
DS = VGS, ID = 50µA
∆
V
∆
GS(th)/ TJ
––– mV/°C
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IDSS
1.0
µA
V
DS = 24V, VGS = 0V
150
V
DS = 24V, VGS = 0V, TJ = 125°C
IGSS
100
nA
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
VGS = -20V
gfs
Qg
–––
23
S
VDS = 15V, ID = 32A
Qgs1
3.6
2.2
–––
–––
–––
–––
–––
–––
VDS = 15V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Qgs2
Qgd
nC VGS = 4.5V
ID = 32A
5.9
3.9
8.1
11
Qgodr
Qsw
Qoss
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
–––
–––
–––
–––
–––
2.0
14
3.5
–––
–––
–––
–––
Ω
VDD = 15V, VGS = 4.5V
Turn-On Delay Time
96
ID = 32A
ns
Rise Time
td(off)
tf
16
RG = 1.8Ω
Turn-Off Delay Time
34
Fall Time
Ciss
Coss
Crss
––– 2139 –––
VGS = 0V
Input Capacitance
–––
–––
464
199
–––
–––
VDS = 15V
ƒ = 1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
114
32
Units
mJ
A
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
7.5
mJ
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
–––
–––
MOSFET symbol
Continuous Source Current
92
(Body Diode)
showing the
integral reverse
A
ISM
–––
–––
Pulsed Source Current
370
(Body Diode)
p-n junction diode.
VSD
–––
–––
–––
–––
23
1.0
35
59
V
T = 25°C, I = 32A, V = 0V
J S GS
Diode Forward Voltage
trr
ns T = 25°C, I = 32A, VDD = 15V
Reverse Recovery Time
J
F
Qrr
di/dt = 200A/µs
39
nC
Reverse Recovery Charge
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
2
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IRLB8748PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
BOTTOM
BOTTOM
3.0V
3.0V
60µs
PULSE WIDTH
Tj = 175°C
≤
60µs
Tj = 25°C
PULSE WIDTH
≤
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1000
100
I
= 40A
D
V
= 10V
GS
T
= 175°C
J
10
1
T = 25°C
J
V
= 15V
DS
≤60µs PULSE WIDTH
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
1
2
3
4
5
6
7
8
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRLB8748PbF
14.0
12.0
10.0
8.0
10000
V
= 0V,
= C
f = 1 MHZ
GS
I = 32A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
= 24V
= 15V
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
C
iss
1000
6.0
C
oss
4.0
C
rss
2.0
0.0
100
0
10
20
30
40
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
T = 175°C
J
100µsec
1msec
10msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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IRLB8748PbF
2.5
2.0
1.5
1.0
0.5
100
80
60
40
20
0
Limited By Package
I
= 50µA
D
ID = 250µA
ID = 1.0mA
-75 -50 -25
0
25 50 75 100 125 150 175
25
50
75
100
125
150
175
T , Temperature ( °C )
J
T
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
1
0.1
D = 0.50
0.20
0.10
0.05
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
1.55246 0.005303
0.00682 8.250407
0.00172 6.932919
0.43999 0.000317
τ
0.02
0.01
τ
J τJ
τ
C
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLB8748PbF
18
16
14
12
10
8
500
450
400
350
300
250
200
150
100
50
I
= 40A
I
D
D
TOP
6.73A
11.6A
BOTTOM 32A
T
T
= 125°C
J
J
6
= 25°C
8
0
4
2
4
6
10
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13c. Maximum Avalanche Energy
Fig 12. On-Resistance vs. Gate Voltage
vs. Drain Current
15V
RD
VDS
VGS
DRIVER
+
L
V
DS
D.U.T.
RG
+VDD
-
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
VGS
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Ω
0.01
t
p
Fig 13a. Unclamped Inductive Test Circuit
Fig 14a. Switching Time Test Circuit
V
(BR)DSS
V
DS
t
p
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
I
AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
6
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IRLB8748PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
Qgodr
Qgd
Qgs2
I
I
D
G
Current Sampling Resistors
Fig 17. Gate Charge Waveform
Fig 16. Gate Charge Test Circuit
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7
IRLB8748PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLB8748PbF
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.22mH, RG = 25Ω,
IAS = 32A.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on
maximum allowable junction temperature.
Package limitation current is 78A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
www.irf.com
9
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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