IRL40SC209 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRL40SC209
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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IR MOSFET

StrongIRFET™

IRL40SC209

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

R_DS(on)typ.

max

40V

0.6m

0.8m

478A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

300A

Benefits

 Optimized for Logic Level Drive

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free*

D2PAK-7Pin

IRL40SC209

 RoHS Compliant, Halogen-Free

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Tape and Reel Left

Quantity

IRL40SC209

D2PAK-7Pin

800

IRL40SC209

500

400

300

200

100

5.0

4.0

3.0

2.0

1.0

0.0

Limited By Package

= 100A

= 125°C

= 25°C

100

125

150

175

10 12 14 16 18 20

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

2017-05-12

IRL40SC209

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

478

338

300

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current 

1200

375

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

2.5

V_GS

T_J

Gate-to-Source Voltage

± 20

Operating Junction and

-55 to + 175

300

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

728

Single Pulse Avalanche Energy 

E_{AS (Thermally limited)}

1404

Single Pulse Avalanche Energy 

Avalanche Current 

Repetitive Avalanche Energy 

I_AR

E_AR

See Fig 15, 16, 23a, 23b

Thermal Resistance

Symbol

Parameter

Typ.

–––

0.50

–––

Max.

0.4

Units

Junction-to-Case 

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

°C/W

–––

Junction-to-Ambient 

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Min. Typ. Max. Units

40 ––– –––

––– 0.031 –––

Conditions

V_GS= 0V, I_D= 250µA

V/°C Reference to 25°C, I_D= 5mA 

V_(BR)DSS/T_J

–––

1.0 –––

––– –––

––– ––– 150

––– ––– 100

––– ––– -100

0.6

0.8

1.1

2.4

1.0

_GS= 10V, I_D= 100A 

_GS= 4.5V, I_D= 50A 

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

m

V_GS(th)

V_DS= V_GS, I_D= 250µA

_DS= 40 V, V_GS= 0V

V_DS= 40V,V_GS= 0V,T_J=125°C

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Resistance

_GS= 20V

_GS= -20V

I_GSS

R_G

–––

2.1

–––



Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 300A. Note that

Current imitations arising from heating of the device leads may occur with some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.146mH, R_G= 50, I_AS= 100A, V_GS=10V.

I_SD 100A, di/dt  954A/µs, V_DD V_(BR)DSS, T_J 175°C.

Pulse width  400µs; duty cycle  2%.

C_osseff. (TR) is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_DSS

C_osseff. (ER) is a fixed capacitance that gives the same energy as C_osswhile VDS is rising from 0 to 80% V_DSS

 R_is measured at T_Japproximately 90°C.

 Limited by T_Jmax, starting T_J= 25°C, L = 1mH, R_G= 50, I_AS= 53A, V_GS=10V.

 Pulse drain current is limited to 1200A by source bonding technology.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994: http://www.infineon.com/technical-info/appnotes/an-994.pdf

2017-05-12

IRL40SC209

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

gfs

Parameter

Forward Transconductance

Total Gate Charge

Min.

244

–––

Typ. Max. Units

Conditions

–––

178

–––

267

–––

V_DS= 10V, I_D= 100A

Q_g

I_D= 100A

V_DS= 20V

Q_gs

Gate-to-Source Charge

Gate-to-Drain Charge

Total Gate Charge Sync. (Qg– Qgd)

Turn-On Delay Time

Q_gd

V_GS= 4.5V

Q_sync

t_d(on)

t_r

V_DD= 20V

I_D= 30A

Rise Time

182

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

–––

182

138

–––

R_G= 2.7

_GS= 4.5V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 15270 –––

V_GS= 0V

–––

1960

1370

–––

V_DS= 25V

ƒ = 1.0MHz, See Fig.7

C_{oss eff.(ER)}Effective Output Capacitance (Energy Related) –––

2305

2935

–––

V_GS= 0V, VDS = 0V to 32V

V_GS= 0V, VDS = 0V to 32V

C_{oss eff.(TR)}Output Capacitance (Time Related)

–––

Diode Characteristics

Symbol

I_S

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Min.

Typ. Max. Units

Conditions

MOSFET symbol

–––

––– 478

––– 1200

showing the

integral reverse

p-n junction diode.

I_SM

–––

V_SD

Diode Forward Voltage

–––

2.2

1.2

T_J= 25°C,I_S=100A,V_GS= 0V 

dv/dt

Peak Diode Recovery dv/dt 

––– V/ns T_J= 175°C,I_S= 100A,V_DS= 40V

–––

T_J= 25°C

V_DD= 34V

I_F= 100A,

t_rr

Reverse Recovery Time

–––

2.5

–––

T_J= 125°C

T_J= 25°C di/dt = 100A/µs 

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

T_J= 125°C

I_RRM

T_J= 25°C



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IRL40SC209

1000

100

1000

100

3.25V

VGS

15V

10V

6.0V

5.0V

4.5V

4.0V

3.5V

3.25V

VGS

15V

10V

6.0V

5.0V

4.5V

4.0V

3.5V

3.25V

TOP

60µs

Tj = 175°C



PULSE WIDTH

60µs

Tj = 25°C



PULSE WIDTH

BOTTOM

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

Fig 3. Typical Output Characteristics

1000

100

2.2

1.8

1.4

1.0

0.6

= 100A

= 10V

= 175°C

= 25°C

= 10V

60µs PULSE WIDTH

0.1

-60

-20

100

140

180

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

1000000

100000

10000

1000

= 0V,

f = 1 MHZ

= C + C , C SHORTED

= 100A

iss

gd ds

= C

rss

= 32V

= 20V

= C + C

oss

VDS= 8V

iss

oss

rss

100

0.1

100

50 100 150 200 250 300 350 400 450

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

2017-05-12

IRL40SC209

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

1000

100

100µsec

Limited by Package

= 175°C

1msec

= 25°C

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

, Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode Forward Voltage

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Id = 5.0mA

-60

-20

100

140

180

, Temperature ( °C )

Drain-to-Source Voltage (V)

DS,

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_ossStored Energy

2.0

VGS = 3.5V

VGS = 4.5V

VGS = 6.0V

VGS = 8.0V

VGS = 10V

1.6

1.2

0.8

0.4

100

150

200

, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

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IRL40SC209

0.1

D = 0.50

0.20

0.10

0.05

0.01

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart = 25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25°C and

Tstart = 150°C.

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Avalanche Current vs. Pulse Width

800

700

600

500

400

300

200

100

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.infineon.com)

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 14, 15).

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

100

125

150

175

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 14)

Starting T , Junction Temperature (°C)

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

Fig 16. Maximum Avalanche Energy vs. Temperature

2017-05-12

IRL40SC209

2.5

2.0

1.5

1.0

0.5

0.0

= 60A

= 34V

T = 25°C

T = 125°C

ID = 250µA

ID = 1.0mA

ID = 1.0A

200

400

600

800

-75

-25

125

175

di /dt (A/µs)

, Temperature ( °C )

Fig 17. Threshold Voltage vs. Temperature

Fig 18. Typical Recovery Current vs. dif/dt

1500

1250

1000

750

500

250

= 60A

= 34V

= 100A

= 34V

T = 25°C

T = 125°C

200

400

600

800

200

400

600

800

di /dt (A/µs)

Fig 19. Typical Recovery Current vs. dif/dt

Fig 20. Typical Stored Charge vs. dif/dt

1000

= 100A

= 34V

T = 25°C

750

500

250

T = 125°C

200

400

600

800

di /dt (A/µs)

Fig 21. Typical Stored Charge vs. dif/dt

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IRL40SC209

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 23a. Unclamped Inductive Test Circuit

Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit

Fig 24b. Switching Time Waveforms

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 25b. Gate Charge Waveform

Fig 25a. Gate Charge Test Circuit

2017-05-12

IRL40SC209

D²Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))

D²Pak - 7 Pin Part Marking Information

PART NUMBER

INTERNATIONAL

RECTIFIER LOGO

F1324S-7P

YWWP

DATE CODE

Y = YEAR

W = WEEK

ASSEMBLY

LOT CODE

P = LEADFREE

2017-05-12

IRL40SC209

Qualification Information

Qualification Level

Industrial

(per JEDEC JESD47F)^†

MSL1

D2PAK-7Pin

Moisture Sensitivity Level

RoHS Compliant

(per JEDEC J-STD-020D^†)

Yes

†

Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comments

 Corrected package picture added “s” on pin number 4 - page 1.

05/12/2017

Published by

Infineon Technologies AG

81726 München, Germany

IMPORTANT NOTICE

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

WARNINGS

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

2017-05-12

IRL40SC209 [INFINEON]

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