IRL3705NSPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRL3705NSPBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总10页 (文件大小:294K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95381
IRL3705NSPbF
l Logic-Level Gate Drive
IRL3705NLPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Surface Mount (IRL3705NS)
l Low-profilethrough-hole(IRL3705NL)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
l Fully Avalanche Rated
l Lead-Free
RDS(on) = 0.01Ω
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewellknownfor, providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
ID = 89A
S
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3705NL) is available for low-
profileapplications.
2
TO-262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
89
63
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
A
310
3.8
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
170
1.1
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
340
46
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
1.7
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.90
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
06/08/04
IRL3705NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.056 V/°C Reference to 25°C, ID = 1mAꢀ
0.010
0.012
0.018
VGS = 10V, ID = 46A
VGS = 5.0V, ID = 46A
VGS = 4.0V, ID = 39A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 46Aꢀ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
50
2.0
V
S
Forward Transconductance
25
250
100
-100
98
19
49
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 46A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13 ꢀ
12
VDD = 28V
RiseTime
140
ID = 46A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
37
78
RG = 1.8Ω, VGS = 5.0V
RD = 0.59Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
7.5
nH
pF
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
3600
870
320
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
89
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
310
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.3
94 140
290 440
V
TJ = 25°C, IS = 46A, VGS = 0V
TJ = 25°C, IF = 46A
ns
nC
Qrr
ton
di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRL3705N data and test conditions
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL3705NS/LPbF
1000
100
10
1000
100
10
VGS
VGS
15V
TOP
15V
TOP
12V
12V
10V
8.0V
6.0V
4.0V
3.0V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 175°C
T
= 25°C
J
J
1
0.1
1
A
A
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 77A
D
T = 25°C
J
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
V
= 10V
GS
1
A
A
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
IRL3705NS/LPbF
15
12
9
6000
I
= 46A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
ds
DS
DS
= C
gd
5000
4000
3000
2000
1000
0
C
= C + C
iss
ds
gd
C
oss
6
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
20
40
60
80
100
120
140
1
10
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
Single Pulse
C
J
V
= 0V
GS
1
A
A
1
10
100
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
IRL3705NS/LPbF
100
80
60
40
20
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+
-
VDD
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
2
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRL3705NS/LPbF
800
600
400
200
0
I
D
TOP
19A
33A
BOTTOM 46A
15V
DRIVER
L
V
DS
D.U.T
R
+
-
G
V
DD
I
A
AS
10V
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
175
25
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL3705NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14.ForN-ChannelHEXFETS
IRL3705NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INT E RNAT IONAL
RECTIFIER
LOGO
ASS EMBLED ON WW 02, 2000
IN THE ASSEMBLYLINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WE EK 02
Note: "P" in ass embly line
pos i ti on indicates "L ea d-F ree"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
ASSEMBLY
LOT CODE
WEEK 02
A = ASSEMBLY SITE CODE
IRL3705NS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INT ERNATIONAL
RECTIFIER
LOGO
ASS EMB LED ON WW 19, 1997
IN T HE AS SEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WE EK 19
Note: "P" in assembly line
pos ition ind icates "Lead-F ree"
AS S EMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MB LY
LOT CODE
WEE K 19
A = AS S E MB LY S IT E CODE
IRL3705NS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
相关型号:
IRL3705NSTRLPBF
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRL3705NSTRR
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRL3705NSTRRPBF
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRL3705S
Power Field-Effect Transistor, 80A I(D), 50V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRL3705STRL
Power Field-Effect Transistor, 80A I(D), 50V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRL3705STRR
Power Field-Effect Transistor, 80A I(D), 50V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明