IRL3502_03 [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRL3502_03
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总7页 (文件大小：173K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 94879

IRL3502PbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Optimized for 4.5V-7.0V Gate Drive

l Ideal for CPU Core DC-DC Converters

l Fast Switching

V_DSS= 20V

R_DS(on)= 0.007Ω

l Lead-Free

I_D= 110Aꢀ

Description

These HEXFET Power MOSFETs were designed

specifically to meet the demands of CPU core DC-DC

converters in the PC environment. Advanced

processing techniques combined with an optimized

gate oxide design results in a die sized specifically to

offer maximum efficiency at minimum cost.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

110ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 5.0V

Pulsed Drain Current

420

140

1.1

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 10

V_GSM

Gate-to-Source Voltage

(Start Up Transient, tp = 100µs)

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

390

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

6-32

Mounting

torque,

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

0.89

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

°C/W

12/9/03

IRL3502PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient 0.019 V/°C Reference to 25°C, I_D= 1mA

0.008

0.007

0.70

V_GS= 4.5V, I_D= 64A

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS= 7.0V, I_D= 64A

V_DS= V_GS, I_D= 250µA

V_DS= 10V, I_D= 64A

V_DS= 20V, V_GS= 0V

V_DS= 10V, V_GS= 0V, T_J= 150°C

V_GS= -10V

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

250

100

-100

110

µA

I_DSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= 10V

Q_g

I_D= 64A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 16V

V_GS= 4.5V, See Fig. 6

140

V_DD= 10V

I_D= 64A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 3.8Ω, V_GS= 4.5V

R_D= 0.15Ω,

Between lead,

6mm (0.25in.)

from package

130

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

4.5

7.5

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

4700

1900

640

Output Capacitance

V_DS= 15V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

110ꢀ

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

420

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

1.3

87 130

200 310

T_J= 25°C, I_S= 64A, V_GS= 0V

T_J= 25°C, I_F= 64A

Q_rr

t_on

di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Repetitive rating; pulse width limited by

max. junction temperature.

ꢀ Calculated continuous current based on maximum allowable

junction temperature; for recommended current-handling of the

package refer to Design Tip # 93-4

Starting T_J= 25°C, L = 190µH

R_G= 25Ω, I_AS= 64A.

I_SD≤ 64A, di/dt ≤ 86A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

IRL3502PbF

1000

100

1000

100

VGS

TOP

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

TOP

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

BOTTOM2.25V

2.25V

20µs PULSE WIDTH

T = 150 C

T = 25 C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

1000

110A

T = 25 C

1.5

1.0

0.5

0.0

T = 150 C

100

= 15V

20µs PULSE WIDTH

=4.5V

5 6

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRL3502PbF

8000

= 0V,

f = 1MHz

gd , ds

64A

= C + C

SHORTED

iss

= C

= C + C

rss

= 16V

oss

6000

4000

2000

iss

oss

rss

100

120

160

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

T = 150 C

100us

1ms

100

T = 25 C

T = 150 C

Single Pulse

= 0 V

10ms

0.5

1.0

1.5

2.0

2.5

100

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

IRL3502PbF

120

100

800

600

400

200

LIMITED BY PACKAGE

TOP

29A

40A

BOTTOM 64A

100

125

150

100

125

150

T , Case Temperature ( C)

Starting T , Junction Temperature ( C)

Fig 9. Maximum Drain Current Vs.

Fig 10. Maximum Avalanche Energy

Case Temperature

Vs. Drain Current

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL3502PbF

0.010

0.008

0.006

0.004

0.014

0.012

0.010

0.008

= 64A

= 4.5V

0.006

0.004

= 7.0V

2.0

3.0

4.0

5.0

6.0

7.0

8.0

100

200

300

400

V_GS, Gate-to-Source Voltage (V)

I , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Fig 13. On-Resistance Vs. Gate Voltage

IRL3502PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

3.78 (.149)

- B -

10.29 (.405)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

3.54 (.139)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

LEAD ASSIGNMENTS

1.15 (.045)

MIN

HEXFET

IGBTs, CoPACK

1 - GATE

2 - DRAIN

3 - SOURCE

2- DRAIN

3- SOURCE

4 - DRAIN

1- GATE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

4- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

CONTROLLING DIMENSION : INCH

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPLE: T HIS IS AN IRF1010

LOT CODE 1789

PART NUMBER

AS S EMBLED ON WW 19, 1997

IN T HE AS S E MBLY LINE "C"

INT ERNAT IONAL

RE CT IFIER

LOGO

Note: "P" in assembly line

position indicates "Lead-Free"

DAT E CODE

YEAR 7 = 1997

WEEK 19

AS SE MBLY

LOT CODE

LINE C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/03

IRL3502_03 [INFINEON]

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