IRKT91/08S90PBF [INFINEON]
Silicon Controlled Rectifier, 210A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA;
| 型号： | IRKT91/08S90PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 210A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA 局域网 栅 栅极 |
| 文件： | 总10页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27132 rev. D 09/97
IRK.71, .91 SERIES
NEWADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
75 A
95 A
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configu-
rations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
Major Ratings and Characteristics
Parameters IRK.71
IRK.91
Units
IT(AV) or IF(AV)
75
95
A
A
@85°C
IO(RMS) (*)
165
210
ITSM @ 50Hz
IFSM @ 60Hz
1665
1740
1785
1870
A
A
2
2
I t @ 50Hz
13.86
15.91
KA s
2
@ 60Hz
12.56
138.6
14.52
159.1
KA s
2
2
I √t
KA √s
VRRM range
400to1600
V
TSTG
- 40 to 125
- 40 to125
oC
oC
TJ
(*) As AC switch.
1
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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive IRRM
peak off-state voltage, IDRM
Voltage
Type number
Code
gate open circuit
125°C
mA
-
V
V
V
04
06
08
400
500
400
600
700
600
800
900
800
IRK.71/ .91
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.71
75
IRK.91
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
180o conduction, half sine wave,
TC=85oC
95
IF(AV) Max. average forward
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
165
210
or
I(RMS)
I(RMS)
As AC switch
A
ITSM Max. peak, one cycle
1665
1740
1400
1470
1850
1940
13.86
12.56
9.80
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ = TJ max.
or
non-repetitive on-state
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ = 25oC,
IFSM or forward current
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
Initial TJ = TJ max.
t=10ms 100% VRRM
KA2s
8.96
t=8.3ms reapplied
t=10ms TJ = 25oC,
17.11
15.60
138.6
t= 8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max. value of threshold
voltage (2)
0.82
0.85
3.00
2.90
0.80
0.85
2.40
2.25
Low level (3)
TJ = TJ max
V
High level (4)
r
Max. value of on-state
slope resistance (2)
Max. peak on-state or
Low level(3)
TJ = TJ max
High level (4)
t
mΩ
VTM
VFM
ITM =π x IT(AV)
T
J = 25°C
1.59
1.58
V
forward voltage
IFM =π x IF(AV)
TJ = 25oC, from 0.67 VDRM
di/dt Max. non-repetitive rate
,
of rise of turned on
current
150
200
A/µs
mA
ITM =π x IT(AV), I = 500mA,
g
t < 0.5 µs, t > 6 µs
r
p
IH
Max. holding current
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
400
TJ =25oC,anode supply=6V, resistive load
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
Triggering
Parameters
IRK.71
12
IRK.91
12
Units
Conditions
PGM Max. peak gate power
W
A
PG(AV) Max. average gate power
3.0
3.0
IGM
Max. peak gate current
3.0
3.0
-VGM Max. peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
TJ=-40°C
TJ= 25°C
V
Anode supply=6V
resistive load
1.7
270
150
80
TJ= 125°C
TJ=-40°C
TJ= 25°C
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
TJ =125°C
TJ= 125oC,
rated VDRM applied
TJ= 125oC,
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
mA
rated VDRM applied
Blocking
Parameters
IRK.71
IRK.91
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
15
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16 S90.
Thermal and Mechanical Specifications
Parameters
IRK.71
IRK.91
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
- 40 to 125
stg
RthJC Max. internal thermal
resistance, junction
to case
0.165
0.135
Per module, DC operation
K/W
Nm
RthCS Typical thermal resistance
case to heatsink
Mounting surface flat, smooth and greased.
0.1
5
Flatness <0.03mm; roughness< 0.02mm
T
Mounting torque ± 10%
to heatsink
A mounting compound is recommended
and the torque shouldbe rechecked after
a period of 3 hours to allow for the
spread of thecompound
busbar
3
wt
Approximate weight
83 (3)
g (oz)
Case style
TO-240AA
JEDEC
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3
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.06
0.04
120o
0.07
0.05
90o
60o
30o
180o
0.04
0.03
120o
0.08
0.05
90o
60o
30o
IRK.71
IRK.91
0.09
0.06
0.12
0.08
0.18
0.12
0.10
0.06
0.13
0.08
0.18
0.12
Outlines Table
IRKT../.. (*)
IRKH../.. (*)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
15.5 ± 0.5
(0.61 ± 0.02)
18 REF.
(0.71)
Screws M5 x 0.8
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(0.11 x 0.03)
6.3 ± 0.3
6.3 ± 0.3
(0.25 ± 0.01)
(0.25 ± 0.01)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
IRKL../.. (*)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
6.3 ± 0.3
(0.25 ± 0.01)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
All dimensions in millimeters (inches)
(*)For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
Circuit Configurations Table
IRKT
IRKH
(1)
IRKL
(1)
~
(1)
~
~
+
(2)
+
(2)
+
(2)
-
(3)
-
(3)
-
(3)
K2 G2
(7) (6)
G1
(4) (5)
G1 K1
(4) (5)
K1
K2 G2
(7) (6)
Ordering Information Table
Device Code
IRK.92 types
With no auxiliary cathode
IRK
T
91
/
16 S90
3
4
1
2
5
13.8 (0.53)
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table)
Current code * *
* * Available with no auxiliary cathode.
To specify change:
91 to 92
71 to 72
Voltage code (See Voltage Ratings table)
dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
e.g. : IRKT92/16 etc.
130
120
110
100
90
130
120
110
100
90
IRK.71.. Se rie s
IRK.71.. Se rie s
R thJC (DC) = 0.33 K/W
R
(DC) = 0.33 K/W
thJC
C ond uc tio n Pe rio d
Co nd uctio n Ang le
30°
30°
60°
90°
60°
120°
180°
90°
80
80
120°
DC
100
180°
70
70
0
10 20 30 40 50 60 70 80
Ave ra g e On -sta te C urre nt (A)
0
20
40
60
80
120
Ave ra g e O n-sta te Curre n t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
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5
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
120
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
100
80
RMS Lim it
60
RMS Limit
60
Co nduc tio n Pe riod
40
20
0
Co n d uc tion An g le
40
IRK.71.. Se rie s
Pe r Junc tion
IRK.71.. Se rie s
Pe r Junc tion
20
T
= 125°C
J
T
= 125°C
J
0
0
10 20 30 40 50 60 70 80
Ave ra g e O n-sta te Curre nt (A)
0
20
40
60
80
100
120
Ave ra g e On -sta te C urre n t (A)
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
1800
1600
1500
1400
1300
1200
1100
1000
900
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tio n. C ontro l
Of C ond uc tion Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Cond itio n And With
Ra te d V
RRM
Ap p lie d Fo llowing Surg e .
1600
1400
1200
1000
800
Initia l T = 125°C
J
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta ge Re a p plie d
Ra te d V
Re a p p lie d
RRM
IRK.71.. Se rie s
Pe r Junc tio n
IRK.71.. Se rie s
Pe r Junc tio n
800
700
600
0.01
1
10
100
0.1
1
Nu m b er Of Eq ua l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Pulse Tra in Dura tio n (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
250
0
180°
120°
90°
60°
30°
.
2
t
h
K
S
A
0
/
.
W
3
K
/
200
150
100
50
W
0
.
7
K
/
W
C ond uc tion Ang le
IRK.71.. Se rie s
Pe r Mod ule
T
= 125°C
J
0
0
20 40 60 80 100 120 140 160 18
0
20
40
60
80
100 120 140
Ma ximum Allo wa b le Am b ie nt Te m p e ra ture (°C )
Tota l RMS Outp ut Curre nt (A)
Fig. 7 - On-state Power Loss Characteristics
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6
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
600
500
400
300
200
100
0
180°
(Sine )
180°
(Re c t)
0
.
3
K
/
W
2 x IRK.71.. Se rie s
Single Pha se Bridg e
C o nne c te d
1
K
/
W
2
K
/
W
T
= 125°C
J
0
20 40 60 80 100 120 140 160 180
20
40
60
80
100 120 140
To ta l Outp ut Curre nt (A)
Ma ximum Allo wa b le Am b ie n t Te mp e ra ture (°C)
Fig. 8 - On-state Power Loss Characteristics
800
700
600
500
400
300
200
100
0
t
h
S
A
120°
(Re c t)
0
.
2
K
/
W
W
W
0
.
3
K
/
0
1
.
5
K
/
3 x IRK.71.. Se rie s
Thre e Pha se Brid g e
C onne c te d
K
/
W
T
= 125°C
J
0
40
80
120
160
200
240
20
40
60
80
100 120 140
Tota l O utp ut Curre nt (A)
Ma ximum Allo w ab le Am b ien t Te m p era ture (°C)
Fig. 9 - On-state Power Loss Characteristics
130
120
110
100
90
130
120
110
IRK.91.. Se rie s
IRK.91.. Se rie s
R
(DC) = 0.27 K/ W
R
(DC ) = 0.27 K/ W
thJC
thJC
Cond uc tion Ang le
Conduc tion Pe riod
100
90
30°
30°
60°
60°
90°
120°
80
80
90°
120°
180°
DC
180°
70
70
0
20
40
60
80
100
0
20 40 60 80 100 120 140 160
Ave ra g e On -sta te C urre nt (A)
Ave ra g e On -sta te C urre nt (A)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
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7
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
140
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
120
100
RMS Lim it
80
60
40
20
0
RMS Lim it
C o nd uc tio n Perio d
Cond uc tio n Angle
60
IRK.91.. Se rie s
Pe r Jun c tio n
IRK.91.. Se rie s
Pe r Junc tion
40
20
T = 125°C
T = 125°C
J
J
0
0
20
40
60
80
100
0
20 40 60 80 100 120 140 160
Ave ra g e On-sta te C urre nt (A)
Avera g e O n-sta te Curre nt (A)
Fig. 12 - On-state Power Loss Characteristics
Fig. 13 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
At Any Ra te d Lo a d C onditio n And With
Ma xim um Non Re pe titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Contro l
Of Co nd uc tio n Ma y Not Be Ma inta ine d .
Ra te d V
App lie d Follo wing Surg e .
RRM
In itial T = 125°C
J
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.91.. Se rie s
Pe r Junc tion
IRK.91.. Se rie s
Pe r Junc tion
800
700
600
0.01
0.1
1
1
10
100
Nu mb e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre nt Pu lse s (N)
Pulse Tra in Dura tio n (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
350
R
300
250
200
150
100
50
180°
120°
90°
60°
30°
=
0
.
1
K
/
0
.
3
W
K
/
-
W
D
e
l
t
a
0
R
.
5
K
/
W
W
0
.
C onduc tio n Ang le
7
K
/
1
3
K
/
W
IRK.91.. Se rie s
Pe r Mo d ule
K
/ W
T = 125°C
J
0
0
40
80
120
160
200
24
0
20
40
60
80
100 120 140
To ta l RMS Outp ut Curre nt (A)
Ma xim um Allow a b le Am b ie nt Te mp e ra ture (°C )
Fig. 16 - On-state Power Loss Characteristics
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8
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
600
500
400
300
200
100
0
R
t
180°
(Sin e )
180°
h
S
A
=
0
.
1
K
(Re c t)
/
W
0
.
2
-
K
D
/
W
e
l
t
a
R
0
.
5
K
/
W
2 x IRK.91.. Se rie s
Single Pha se Bridg e
C onne c te d
2
K
/ W
T
= 125°C
J
0
40
80
120
160
200
20
40
60
80
100 120 140
To ta l O utp ut C urre n t (A)
Ma ximum Allo wa b le Amb ie nt Te m pe ra ture (°C )
Fig. 17 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
R
t
h
S
A
=
0
.
1
K
/
W
120°
(Re c t)
-
D
e
l
0
t
.
2
a
K
R
/
W
W
W
0
.
3
K
/
3 x IRK.91.. Se rie s
Thre e Pha se Brid g e
C onne c te d
0
.5
K
/
1
K
/
W
T J = 125°C
0
40
80
120 160 200 240 280
20
40
60
80
100 120 140
To ta l O utp ut Curre nt (A)
Maxim um Allo wa b le Am b ie n t Te mp e ra ture (°C)
Fig. 18 - On-state Power Loss Characteristics
1000
100
10
1000
100
10
T = 25°C
J
T = 25°C
J
T = 125°C
T = 125°C
J
J
IRK.71.. Serie s
Pe r Junc tion
IRK.91.. Se rie s
Pe r Junc tio n
1
0.5
1
0.5
1
1.5
2
2.5
3
3.5
4
1
1.5
2
2.5
3
3.5
In sta nta ne o us O n-sta te Vo lta g e (V)
Insta nta ne o us On -sta te Vo lta g e (V)
Fig. 19 - On-state Voltage Drop Characteristics
Fig. 20 - On-state Voltage Drop Characteristics
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9
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
700
140
120
100
80
IRK.71.. Se rie s
IRK.91.. Se rie s
I
= 200 A
100 A
TM
I
= 200 A
100 A
IRK.71.. Se rie s
TM
IRK.91.. Se rie s
= 125 °C
600
500
400
300
200
100
T
= 125 °C
J
T
J
50 A
50 A
20 A
10 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll O f On -sta te Curre n t - d i/ dt (A/µs)
Ra te O f Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig. 21 - Recovery Charge Characteristics
Fig. 22 - Recovery Current Characteristics
1
Ste a dy Sta te Va lue :
R
R
= 0.33 K/W
= 0.27 K/W
thJC
thJC
(DC Op era tion)
IRK.71.. Se rie s
IRK.91.. Se rie s
0.1
Pe r Junc tion
0.01
0.001
0.01
0.1
Sq ua re Wa ve Pulse Dura tio n (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a )Re c o m m e nd e d lo a d line fo r
ra te d d i/d t: 20 V, 20 o hm s
tr = 0.5 µs, tp >= 6 µs
b )Re c o m m e n d e d lo a d line fo r
<= 30% ra te d d i/d t: 15 V, 40 o hm s
tr = 1 µs, tp >= 6 µs
(a )
(b)
(4) (3) (2)
(1)
VG D
IG D
IRK.71../ .91.. Se rie s Fre q ue nc y Limite d b y PG(AV)
0.1 10 100
0.1
0.001
0.01
1
1000
Insta nta ne o us Ga te Curre nt (A)
Fig. 24 - Gate Characteristics
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