IRHYB68230CM [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;型号: | IRHYB68230CM |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
文件: | 总8页 (文件大小:178K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95818
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB67230CM
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHYB67230CM 100K Rads (Si) 0.13Ω 16A
IRHYB63230CM 300K Rads (Si) 0.13Ω 16A
IRHYB64230CM 600K Rads (Si) 0.13Ω 16A
IRHYB68230CM 1000K Rads (Si) 0.13Ω 16A
Low-Ohmic
TO-257AA
Tabless
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Their combination of very low R
and faster
DS(on)
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
16
10
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
64
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
±20
60
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
mJ
A
AS
I
16
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
6.1
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
05/10/04
IRHYB67230CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.19
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.13
Ω
V
= 12V, I = 10A Ã
D
DS(on)
GS
2.0
11
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
V
V
= 15V, I
= 10A Ã
DS
DS
DS
I
= 160V ,V =0V
GS
DSS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
33
12
15
15
40
35
15
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 16A
g
gs
gd
d(on)
r
GS D
V
DS
= 100V
t
t
t
t
V
DD
V
= 100V, I = 16A
=12V, R = 7.5Ω
GS G
D
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1660
206
2.6
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
pF
oss
rss
g
R
1.75
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
16
64
1.2
300
3.2
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 16A, V
= 0V Ã
j
S
GS
T = 25°C, I = 16A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHYB67230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
200
2.0
—
—
—
—
4.0
100
-100
10
200
2.0
—
—
—
—
4.0
100
-100
10
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
I
V
= 20V
GS
GSS
nA
V
GS
= -20 V
GSS
I
µA
Ω
V
V
= 160V, V =0V
DSS
DS GS
R
DS(on)
—
0.134
—
0.134
= 12V, I = 10A
D
GS
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance (Low Ohmic TO-257AA)
R
—
—
0.13
1.2
—
—
0.13
1.2
Ω
V
= 12V, I = 10A
D
GS
DS(on)
V
SD
Diode Forward Voltage
Ã
V
V
= 0V, I = 16A
GS S
1. Part numbers IRHYB67230CM, IRHYB63230CM and IRHYB64230CM
2. Part number IRHYB68230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
(MeV/(mg/cm2)) (MeV)
(µm)
0V
-5V
-10V
-15V
-17V
-18V
-19V
-20V
Xe
Xe
Xe
43
59
90
2441
825
205
66
200
200
200
200
200
200
200
200
50
200
200
-
200
170
-
190
160
-
180
150
-
-
-
-
1480
80
250
200
150
100
50
LET=43
LET=59
LET=90
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHYB67230CM
Pre-Irradiation
100
100
10
1
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
5.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
10
1
16A
=
I
D
T
= 150°C
2.0
1.5
1.0
0.5
0.0
J
T
= 25°C
J
V
= 50V
DS
0µ
6
s PULSE WIDTH
V
=12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2
4
6
8
10
12
14
16
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHYB67230CM
3000
20
16
12
8
V
= 0V,
f =1MHz
gd , ds
I
D
= 16A
GS
C
= C + C
gs
C
SHORTED
V
V
V
= 160V
iss
DS
DS
DS
C
= C
gd
= C + C
ds
= 100V
rss
C
= 40V
2400
1800
1200
600
0
oss
gd
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
= 25°C
T
J
100µs
1.0
0.1
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
GS
0.1
1
10
100
1000
0.2
0.4
SD
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHYB67230CM
Pre-Irradiation
RD
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYB67230CM
100
80
60
40
20
0
I
D
TOP
7.0A
10A
15V
BOTTOM 16A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHYB67230CM
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á
V
= 25V, starting T = 25°C, L= 0.5mH
J
DD
Peak I = 16A, V
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
= 12V
L
GS
 I
≤ 16A, di/dt ≤ 500A/µs,
≤ 200V, T ≤ 150°C
J
SD
DD
Å Total Dose Irradiation with V
Bias.
DS
applied and V = 0 during
GS
V
160 volt V
DS
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Ohmic TO-257AA ( Tabless)
10.66 [.420]
10.42 [.410]
5.08 [.200]
4.83 [.190]
A
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
0.13 [.005]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
B
A
NOT ES:
LEAD ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2004
8
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