IRGS4045DPbF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE; 符合UL TRAFAST软恢复二极管绝缘栅双极晶体管
| 型号： | IRGS4045DPbF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE |
| 文件： | 总12页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGS4045DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
C
C
IC 6.0A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. 1.7V
E
G
G
D2-Pak
E
IRGS4045DPbF
n-channel
Applications
Appliance Motor Drive
Inverters
SMPS
G
Gate
C
E
Colletor
Emitter
Features
Benefits
High efficiency in a wide range of applications and
switching frequencies
Low VCE(ON) and switching losses
Improved reliability due to rugged hard switching performance
and higher power capability
Square RBSOA and maximum junction temperature 175°C
Positive VCE(ON) temperature coefficient and tighter
distribution of parameters
Excellent current sharing in parallel operation
5μs short circuit SOA
Ultra fast soft recovery copak diode
Lead-free, RoHS compliant
Enables short circuit protection scheme
Performance optimized for motor drive operation
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Tube
Orderable Part Number
Quantity
50
IRGS4045DPbF
D2Pak
IRGS4045DPbF
IRGS4045DTRLPbF
IRGS4045DTRRPbF
Tape and Reel Left
Tape and Reel Right
800
800
Absolute Maximum Ratings
Parameter
Max.
600
12
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
V
IC@ TC = 25°C
IC@ TC = 100°C
ICM
6.0
18
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
24
ILM
A
8.0
4.0
IF@TC=25°C
IF@TC=100°C
IFM
24
± 20
± 30
77
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
V
VGE
PD @ TC =25°
PD @ TC =100°
TJ
W
39
Maximum Power Dissipation
Operating Junction and
°C
-55 to + 175
300 (0.063 in. (1.6mm) from case)
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.5
Max.
1.9
Units
R
JC
Junction-to-Case - Diode
R
6.3
JC
°C/W
R
Case-to-Sink, Flat, Greased Surface
–––
40
CS
R
Junction-to-Ambient (PCB Mountet, steady-state)
–––
JA
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
600
—
Typ.
—
Max.
—
Units
V
Conditions
VGE = 0V, Ic =100 μA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VGE = 0V, Ic = 250μA( 25 -175 oC )
IC = 6.0A, VGE = 15V, TJ = 25°C
IC = 6.0A, VGE = 15V, TJ = 150°C
IC = 6.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 150μA
V(BR)CES/TJ
0.36
1.7
2.07
2.14
—
—
V/°C
—
2.0
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
V
—
—
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
4.0
—
6.5
—
V
mV/°C
S
VCE = VGE, IC = 250μA ( 25 -175 oC )
Threshold Voltage temp. coefficient
Forward Transconductance
-13
5.8
VCE = 25V, I = 6.0A, PW =80 s
—
—
C
VGE = 0V,VCE = 600V
VGE = 0V, VCE = 600V, TJ =175°C
IF = 6.0A
ICES
—
—
25
μA
Collector-to-Emitter Leakage Current
—
—
—
—
—
1.60
1.30
—
250
2.30
—
VFM
V
nA
Diode Forward Voltage Drop
IF = 6.0A, TJ = 175°C
VGE = ± 20 V
IGES
Gate-to-Emitter Leakage Current
±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
Units
nC
Conditions
IC = 6.0A
Qg
13
3.1
6.4
56
19.5
4.65
9.6
86
143
229
35
15
93
22
—
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VCC = 400V
VGE = 15V
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47, L=1mH, LS= 150nH, TJ = 25°C
E nergy los s es include tail and diode revers e recovery
IC = 6.0A, VCC = 400V
RG = 47, L=1mH, LS= 150nH
TJ = 25°C
122
178
27
μJ
11
ns
td(off)
tf
Turn-Off delay time
75
Fall time
17
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
140
189
329
26
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47, L=1mH, LS= 150nH, TJ = 175°C
E nergy los s es include tail and diode revers e recovery
IC = 6.0A, VCC = 400V
—
μJ
—
—
12
—
ns
RG = 47, L=1mH, LS= 150nH
TJ = 175°C
td(off)
tf
Turn-Off delay time
95
—
Fall time
32
—
Cies
Coes
Cres
Input Capacitance
350
29
—
VGE = 0V
pF
Output Capacitance
Reverse Transfer Capacitance
—
VCC = 30V
10
—
f = 1Mhz
TJ = 175°C, IC = 24A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
CC = 500V, Vp =600V
RG = 100, VGE = +20V to 0V
CC = 400V, Vp =600V
V
SCSOA
Erec
Short Circuit Safe Operating Area
5
—
—
—
μs
RG = 100, VGE = +15V to 0V
Reverse recovery energy of the diode
Diode Reverse recovery time
—
178
74
μJ
ns
A
TJ = 175oC
VCC = 400V, IF = 6.0A
trr
Irr
—
—
—
—
Peak Reverse Recovery Current
12
VGE = 15V, Rg = 47, L=1mH, LS=150nH
Notes:
VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47
Pulse width limited by max. junction temperature.
R is measured at TJ approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Maximum limits are based on statistical sample size characterization.
www.irf.com © 2012 International Rectifier
October 10, 2012
2
IRGS4045DPbF
14
12
10
8
80
70
60
50
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10μsec
100μsec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
10
100
(V)
1000
1
10
100
1000
V
(V)
CE
V
CE
Fig. 3 - Forward SOA,
TC = 25°C, TJ 175°C, VGE = 15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C, VGE = 20V
20
15
10
5
20
15
10
5
Top
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
Bottom V
Bottom
V
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
3
www.irf.com © 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
20
15
10
5
20
18
16
14
12
10
8
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
Bottom
V
GE
-40°C
25°C
175°C
6
4
2
0
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
V
(V)
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
10
10
8
6
4
2
0
8
6
4
2
0
I
I
I
= 3.0A
= 6.0A
= 12A
I
I
I
= 3.0A
= 6.0A
= 12A
CE
CE
CE
CE
CE
CE
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
10
8
T = 25°C
J
T = 175°C
J
I
I
I
= 3.0A
CE
CE
CE
6
= 6.0A
= 12A
4
6
4
2
2
0
0
4
6
8
10
12
14
16
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
www.irf.com © 2012 International Rectifier
October 10, 2012
4
IRGS4045DPbF
400
350
300
250
200
150
100
50
1000
100
10
td
OFF
t
F
E
OFF
td
ON
t
R
E
ON
1
0
2
4
6
I
8
10
12
14
2
4
6
8
10
12
14
I
(A)
C
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V.
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47; VGE= 15V
220
200
1000
100
10
E
OFF
180
td
OFF
160
t
F
E
ON
140
120
100
80
td
ON
t
R
60
1
0
25
50
75
100
125
0
25
50
75
()
100
125
R
G
Rg ()
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
22
20
18
16
14
12
10
8
30
25
R
10
G =
20
15
10
5
R
22
G =
R
R
47
G =
100
G =
6
0
0
25
50
75
(
100
125
2
4
6
8
10
12
14
I
(A)
R
F
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C
TJ = 175°C; IF = 6.0A
5
www.irf.com © 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
1200
1000
800
20
18
16
14
12
10
8
12A
22
10
47
6.0A
600
100
400
3.0A
200
6
0
500
1000
1500
0
200
400
600
800 1000 1200
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
350
50
20
300
250
200
150
100
50
T
sc
40
30
20
10
15
R
R
= 10
G
G
I
sc
= 22
= 47
10
5
R
G
R
= 100
G
0
2
4
6
8
10
12
14
8
10
12
14
(V)
16
18
I
(A)
V
F
GE
Fig. 22- Typ. VGE vs. Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 175°C
1000
100
10
16
14
12
10
8
Cies
V
V
= 400V
= 300V
CES
CES
Coes
Cres
6
4
2
1
0
0
100
200
V
300
(V)
400
500
0
2
4
6
8
10
12
14
Q
, Total Gate Charge (nC)
CE
G
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 6.0A, L=600μH
VGE= 0V; f = 1MHz
www.irf.com © 2012 International Rectifier
October 10, 2012
6
IRGS4045DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.0301
0.7200
0.7005
0.4479
0.000004
0.000067
0.000898
0.005416
0.1
J J
C
0.02
0.01
11
Ci= iRi
2 2
33
44
SINGLE PULSE
0.01
0.001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.2056
1.4132
3.3583
1.8245
0.000019
0.000095
0.001204
0.009127
J J
C
0.02
0.01
11
Ci= iRi
2 2
33
44
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
www.irf.com © 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
www.irf.com © 2012 International Rectifier
October 10, 2012
8
IRGS4045DPbF
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
30
25
tr
TEST
CURRENT
20
tf
90% test
current
6
15
90% ICE
4
10
10% test
current
5% ICE
5% VCE
5
2
5% VCE
0
0
Eoff Loss
Eon Loss
-5
-100
-100
-2
4.3
4.5
4.7
-0.2
0
0.2 0.4 0.6 0.8
1
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
100
15
80
70
60
50
40
30
20
10
0
VCE
450
400
350
300
250
200
150
100
50
0
-100
-200
10
5
QRR
tRR
0
10%
Peak
IRR
ICE
-300 Peak
IRR
-5
-400
-10
-15
-20
-500
-10
-20
-600
0
-0.05
0.05
0.15
0.25
-2 -1 0 1 2 3 4 5 6 7 8
time (µS)
Time (uS)
WF.3- Typ. Diode Recovery Waveform
@ TJ = 175°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
9
www.irf.com © 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
October 10, 2012
10
IRGS4045DPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
11
www.irf.com © 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
Qualification Information†
Industrial††
Qualification Level
(per JEDEC JESD47F) †††
MSL1
Moisture Sensitivity Level
D2Pak
(per JEDEC J-STD-020D)†††
Class M2 (+/- 200V)†††
AEC-Q101-002
Machine Model
Class H1A (+/- 500V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1000V)†††
AEC-Q101-005
Yes
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
www.irf.com © 2012 International Rectifier
October 10, 2012
12
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