IRFTS8342 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFTS8342 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总9页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97728A
IRFTS8342PbF
HEXFET® Power MOSFET
VDS
VGS
30
20
V
V
±
RDS(on) max
(@VGS = 10V)
19
m
RDS(on) max
(@VGS = 4.5V)
29
4.8
8.2
m
TSOP-6
Qg (typical)
nC
A
ID
(@TA = 25°C)
Applications
System/Load Switch
FeaturesandBenefits
Features
Resulting Benefits
Industry-Standard TSOP-6 Package
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Note
Quantity
3000
IRFTS8342TRPBF
TSOP-6
Absolute Maximum Ratings
Max.
30
Parameter
Drain-to-Source Voltage
Units
VDS
V
±20
8.2
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
6.6
80
A
@ TA = 70°C
DM
2.0
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
W
W/°C
°C
1.3
Power Dissipation
0.02
Linear Derating Factor
Operating Junction and
-55 to + 150
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
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1
02/23/12
IRFTS8342PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min.
Typ.
–––
18
Max. Units
BVDSS
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
12
–––
–––
19
V
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.2A
VDSS/TJ
RDS(on)
mV/°C
15
Static Drain-to-Source On-Resistance
m
VGS = 4.5V, ID = 6.6A
22
29
VGS(th)
VGS(th)
IDSS
VDS = VGS, ID = 25μA
Gate Threshold Voltage
1.80
-5.7
–––
–––
–––
–––
–––
4.8
2.1
1.6
2.6
7.3
15
2.35
–––
1.0
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
μA
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
VGS = -20V
VDS = 10V, ID = 6.6A
gfs
Qg
V
GS = 4.5V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
ID = 6.6A
Qgs
Qgd
RG
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
V
DD = 15V, VGS = 4.5V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ID = 6.6.A
ns
RG = 6.8
Turn-Off Delay Time
Fall Time
9.1
8.2
560
102
48
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
VDS = 25V
ƒ = 1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max. Units
D
S
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
2.5
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
80
VSD
trr
T = 25°C, I = 6.6A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
8.2
4.5
1.0
12
V
T = 25°C, I = 6.6A, VDD = 24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100/μs
5.4
Thermal Resistance
Typ.
Max.
Parameter
Units
–––
62.5
RJA
Junction-to-Ambient
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
When mounted on 1 ich square copper board.
2
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IRFTS8342PbF
100
10
1
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
7.0V
4.5V
3.5V
3.0V
2.75V
2.5V
8.0V
7.0V
4.5V
3.5V
3.0V
2.75V
2.5V
BOTTOM
BOTTOM
1
2.5V
0.1
0.01
2.5V
60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.6
1.4
1.2
1.0
0.8
0.6
I
= 8.2A
D
V
= 10V
T = 150°C
GS
J
10
T
= 25°C
J
V
= 15V
DS
60μs PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 6.6A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
1000
100
10
C
iss
C
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
12
14
V
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFTS8342PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100μsec
1msec
10
1
T
= 25°C
10msec
J
1
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
1.4
GS
0.1
0.01
0.1
1
10
100
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
8
6
4
2
0
I
I
I
= 25μA
D
D
D
= 250μA
= 1.0mA
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
AmbientTemperature
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRFTS8342PbF
40
35
30
25
20
15
10
100
90
80
70
60
50
40
30
20
10
I
= 8.2A
D
Vgs = 4.5V
T
= 125°C
J
Vgs = 10V
T
= 25°C
J
0
5
10
15
20
0
10 20 30 40 50 60 70 80
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
100
1000
I
D
90
80
70
60
50
40
30
20
10
0
TOP
0.96A
1.5A
BOTTOM 6.6A
800
600
400
200
0
25
50
75
100
125
150
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Starting T , Junction Temperature (°C)
J
Time (sec)
Fig 15. Typical Power vs. Time
Fig 14. Maximum Avalanche Energy vs. Drain Current
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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5
IRFTS8342PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
AS
p
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
VDD
-
10%
VGS
VGS
PulseWidth µs
DutyFactor
td(on)
td(off)
tr
tf
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRFTS8342PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
DATE CODE MARKING INSTRUCTIONS
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFTS8342PbF
TSOP-6Tape & Reel Information
Qualification information†
Cons umer††
(per JEDEC JES D47F ††† guidelines )
MS L 1
(per JEDEC J-ST D-020D†††
Qualification level
Moisture Sensitivity Level
RoHS compliant
TSOP-6
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2012
8
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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