IRFS4410ZTRLPBF [INFINEON]
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRFS4410ZTRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
D
S
VDSS
RDS(on) typ.
max.
100V
7.2m
9.0m
97A
G
l Hard Switched and High Frequency Circuits
ID (Silicon Limited)
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
D
D
Ruggedness
D
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
S
D
S
S
D
D
G
G
G
D2Pak
IRFS4410ZPbF
TO-262
TO-220AB
l RoHSCompliant,Halogen-Free
IRFSL4410ZPbF
IRFB4410ZPbF
G
D
S
Gate
Drain
Source
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
IRFB4410ZPbF
IRFSL4410ZPbF
TO-220
TO-262
Tube
50
IRFB4410ZPbF
Tube
Tube
50
50
IRFSL4410ZPbF
IRFS4410ZPbF
IRFS4410ZPbF
D2Pak
Tape and Reel Left
Tape and Reel Right
800
800
IRFS4410ZTRLPbF
IRFS4410ZTRRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
97
Units
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
69
ID @ TC = 100°C
390
IDM
230
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W
1.5
W/°C
V
± 20
VGS
Gate-to-Source Voltage
16
Peak Diode Recovery
dv/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy
EAS (Thermally limited)
242
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
Max.
0.65
–––
62
Units
Rθ
–––
0.50
–––
–––
JC
Rθ
Case-to-Sink, Flat Greased Surface , TO-220
°C/W
CS
Rθ
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D2Pak
JA
Rθ
JA
40
1
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
100 ––– –––
––– 0.12 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
2.0
7.2
9.0
4.0
20
VGS = 10V, ID = 58A
mΩ
V
VGS(th)
–––
VDS = VGS, ID = 150μA
IDSS
Drain-to-Source Leakage Current
––– –––
μA
VDS = 100V, VGS = 0V
––– ––– 250
––– ––– 100
––– ––– -100
––– 0.70 –––
V
DS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA VGS = 20V
GS = -20V
V
RG
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Min. Typ. Max. Units
140 ––– –––
Conditions
VDS = 10V, ID = 58A
S
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
83
19
27
56
16
52
43
57
120
–––
nC ID = 58A
VDS =50V
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
VGS = 10V
Qsync
–––
–––
–––
–––
–––
ID = 58A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
ns VDD = 65V
ID = 58A
tr
Rise Time
td(off)
Turn-Off Delay Time
RG =2.7Ω
VGS = 10V
tf
Fall Time
Ciss
Input Capacitance
––– 4820 –––
––– 340 –––
––– 170 –––
––– 420 –––
––– 690 –––
pF
V
GS = 0V
Coss
Output Capacitance
VDS = 50V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0MHz, See Fig.5
Coss eff. (ER)
Coss eff. (TR)
V
GS = 0V, VDS = 0V to 80V , See Fig.11
GS = 0V, VDS = 0V to 80V
V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
––– –––
A
97
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– ––– 390
A
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
57
V
TJ = 25°C, IS = 58A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 85V,
IF = 58A
di/dt = 100A/μs
–––
–––
–––
–––
–––
38
46
53
82
2.5
ns
69
Qrr
Reverse Recovery Charge
80
nC
120
–––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 58A, di/dt ≤ 610A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
2
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
1000
1000
100
10
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
100
10
1
BOTTOM
BOTTOM
4.5V
4.5V
60μs PULSE WIDTH
Tj = 175°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 58A
V
= 50V
D
DS
≤60μs PULSE WIDTH
V
= 10V
GS
T
= 25°C
J
T
= 175°C
J
1
0.1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I = 58A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
V
= 80V
= 40V
= 20V
DS
DS
DS
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
= C + C
ds
gd
C
iss
C
C
oss
rss
100
0
20
40
60
80
100
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
1msec
T
= 175°C
J
100
10
1
10msec
DC
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
V
= 0V
GS
Single Pulse
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
80
60
40
20
0
125
120
115
110
105
100
95
Id = 5mA
90
25
50
T
75
100
125
150
-60 -40 -20 0 20 40 60 80 100120140160180
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
I
D
900
800
700
600
500
400
300
200
100
0
TOP
6.4A
9.4A
BOTTOM 58A
-10
0
10 20 30 40 50 60 70 80 90 100
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
V
J
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R2
R2
R1
Ri (°C/W) τi (sec)
τ
J τJ
τ
0.237
0.000178
τ
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
0.02
0.01
0.413
0.003772
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1.0% Duty Cycle
= 58A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
20
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 39A
= 85V
F
V
R
T
= 25°C _____
= 125°C ----------
J
T
15
10
5
J
I
I
I
I
= 150μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
0
100
200
300
400
500
600
700
-75 -50 -25
0
25 50 75 100 125 150175 200
di /dt (A/μs)
T , Temperature ( °C )
f
J
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
400
350
300
250
200
150
100
50
20
I
= 39A
= 85V
I
= 58A
= 85V
F
F
V
V
T
R
R
T
= 25°C _____
= 125°C ----------
= 25°C _____
= 125°C ----------
J
J
T
T
J
15
10
5
J
0
0
100
200
300
400
500
600
700
100
200
300
400
500
600
700
di /dt (A/μs)
di /dt (A/μs)
f
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
450
I
= 58A
= 85V
F
V
400
350
300
250
200
150
100
50
R
T
= 25°C _____
= 125°C
J
T
J
----------
0
100
200
300
400
500
600
700
di /dt (A/μs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
D.U.T
10%
VGS
VGS
Second Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
FB4410Z
FB4410Z
DATE CODE
OR
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
PYWW?
YWWP
LC
LC
LC
LC
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2PakPartMarkingInformation
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
IRFS4410Z
FS4410Z
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
LC
LC
LC
LC
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
PART NUMBER
PART NUMBER
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
FSL4410Z
FSL4410Z
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
LC LC
? = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Qualification information†
Industrial
Qualification level
(per JEDEC JESD47F†† guidelines)
TO-220
N/A
Moisture Sensitivity Level
RoHS compliant
D2Pak
TO-262
MS L 1
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
•
Updated data sheet with new IR corporate template.
Updated package outline & part marking on page 8, 9 & 10.
4/25/2014
Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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April 25, 2014
相关型号：
IRFS4410ZTRRPBF
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRFS442
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
SAMSUNG
IRFS443
Power Field-Effect Transistor, 4.8A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
SAMSUNG
IRFS4510TRLPBF
Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3/2
INFINEON
IRFS4510TRRPBF
Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3/2
INFINEON
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