IRFR3708PBF [INFINEON]
HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET
| 型号： | IRFR3708PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢Power MOSFET |
| 文件： | 总10页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95071A
IRFR3708PbF
IRFU3708PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
VDSS
30V
RDS(on) max
ID
61A
12.5mΩ
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
D-Pak
IRFR3708
I-Pak
IRFU3708
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
30
Units
V
V
VGS
Gate-to-Source Voltage
± 12
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
61
51
244
87
A
PD @TA = 25°C
PD @TA = 70°C
W
W
61
0.58
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.73
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 9
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1
12/13/04
IRFR/U3708PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.6
8.5
12.5
VGS = 10V, ID = 15A
RDS(on)
Static Drain-to-Source On-Resistance
10.0 14.0 mΩ VGS = 4.5V, ID = 12A
15.0 30.0
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VGS(th)
IDSS
Gate Threshold Voltage
–––
–––
–––
–––
–––
2.0
20
V
–––
–––
–––
–––
µA
Drain-to-Source Leakage Current
100
200
-200
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 15V, ID = 50A
ID = 24.8A
49
––– –––
24 –––
6.7 –––
5.8 –––
S
Qg
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 15V
VGS = 4.5V
VGS = 0V, ID = 24.8A, VDS = 15V
VDD = 15V
14
21
7.2 –––
50 –––
ID = 24.8A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 17.6 –––
––– 3.7 –––
RG = 0.6Ω
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 2417 –––
––– 707 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
ƒ = 1.0MHz
–––
52 –––
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
213
62
Units
mJ
IAR
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
61
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
244
––– –––
S
––– 0.88 1.3
––– 0.80 –––
V
TJ = 25°C, IS = 31A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 31A, VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 41
––– 64
––– 43
62
96
65
ns
TJ = 25°C, IF = 31A, VR=20V
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 31A, VR=20V
nC di/dt = 100A/µs
Qrr
––– 70 105
2
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IRFR/U3708PbF
1000
100
10
1000
100
10
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
VGS
TOP
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
61A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
2.0
3.0
4.0
5.0 6.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U3708PbF
3500
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
24.8A
GS
V
= 15V
C
= C + C
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
2800
2100
1400
700
0
oss
ds
C
iss
6
4
C
oss
2
C
rss
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
10us
J
°
100us
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFR/U3708PbF
RD
70
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3708PbF
0.025
0.017
0.015
0.013
0.011
0.009
0.007
0.020
0.015
VGS = 4.5V
I
= 31A
0.010
D
VGS = 10V
0.005
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
0
50
100
150
200
250
300
I
, Drain Current ( A )
V
Gate -to -Source Voltage (V)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
600
DS
D.U.T.
-
V
I
G
D
10A
V
GS
TOP
3mA
Charge
20.7A
BOTTOM 24.8A
480
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit
360
240
120
0
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
175
I
A
°
20V
Starting T , Junction Temperature ( C)
J
0.01Ω
t
p
I
AS
Fig 15a&b. Unclamped Inductive Test circuit
Fig 15c. Maximum Avalanche Energy
and Waveforms
Vs. Drain Current
6
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IRFR/U3708PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
34
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLYLINE "A"
12
LINE A
Note: "P" in assembly line position
ASSEMBLY
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 16
A= ASSEMBLYSITE CODE
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7
IRFR/U3708PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S E MB L Y
DAT E CODE
YEAR 9 = 1999
WE E K 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
ASS EMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WE E K 19
A = AS S E MB L Y S I T E CODE
8
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IRFR/U3708PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information12/04
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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