IRFP460A [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A); 功率MOSFET （ VDSS = 500V ， RDS（ON）最大值= 0.27ohm ，ID = 20A ）
| 型号： | IRFP460A |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
| 文件： | 总8页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91880
SMPS MOSFET
IRFP460A
HEXFET® Power MOSFET
Applications
VDSS
500V
Rds(on) max
ID
20A
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
0.27Ω
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN1001)
G D S
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
20
13
80
A
PD @TC = 25°C
Power Dissipation
280
W
W/°C
V
Linear Derating Factor
2.2
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
3.8
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies:
l Full Bridge
l PFC Boost
Notes through ꢀare on page 8
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1
6/23/99
IRFP460A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
––– 0.61 –––
––– ––– 0.27
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
2.0
––– 4.0
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 12A
ID = 20A
gfs
11 ––– –––
S
Qg
––– ––– 105
––– ––– 26
––– ––– 42
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
18 –––
55 –––
45 –––
39 –––
VDD = 250V
ID = 20A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 13Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3100 –––
––– 480 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
18 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 4430 –––
––– 130 –––
––– 140 –––
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
960
20
Units
mJ
EAS
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
28
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
20
80
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.8
––– 480 710
––– 5.0 7.5
V
TJ = 25°C, IS = 20A, VGS = 0V
ns
TJ = 25°C, IF = 20A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP460A
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
20µs PULSE WIDTH
°
°
J
T = 25 C
J
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
20A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP460A
20
16
12
8
100000
20A
=
I
D
V G S = 0V,
Ciss = Cgs + Cgd
Crss = C gd
f = 1MHz
Cds SHORTED
,
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
Coss = Cds + C gd
10000
1000
100
10
C
C
iss
oss
rss
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
A
0
20
40
60
80
100
1
10
100
1000
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
°
= 25 C
T
C
°
T
= 150 C
10ms
1000
J
V
= 0 V
Single Pulse
GS
1.4
1
0.1
0.2
10
100
10000
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP460A
RD
20
15
10
5
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP460A
2400
2000
1600
1200
800
400
0
I
1 5V
D
TOP
8.9A
13A
BOTTOM 20A
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
6 2 0
Q
Q
GD
GS
V
G
6 0 0
5 8 0
5 6 0
5 4 0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0
4
8
1 2
1 6
2 0
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
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IRFP460A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP460A
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D
-
3.65 (.143)
3.55 (.140)
5 .30 (.209)
4 .70 (.185)
1 5.90 (.626)
1 5.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
1.50 (.059)
- B -
- A -
5.50 (.217)
4
20 .30 (.800)
19 .70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIO NING & TO LER ANCING
PER ANSI Y14.5M , 1982.
CONTROLLIN G DIM ENSION : INCH .
CONF ORMS TO JEDEC O UTLINE
TO-247-AC.
1
2
3
2
3
- C
-
14.80 (.583)
14.20 (.559)
4.3 0 (.1 70)
3.7 0 (.1 45)
LEAD ASSIGNM ENTS
2.40 (.094)
2.00 (.079)
0.80 (.031)
0.40 (.016)
1.40 (.056 )
1.00 (.039 )
3X
3X
1 - GATE
2 - DR AIN
3 - SOURC E
4 - DR AIN
2X
2.60 (.102)
2.20 (.087)
0.25 (.010)
A
C
M
S
5.45 (.215)
3.4 0 (.1 33)
3.0 0 (.1 18)
2X
Part Marking Information
TO-247AC
E X A M P L E
:
TH IS IS AN IR F P E 30
A
W ITH A S S E M B L Y
L O T C O D E 3 A 1 Q
P AR T N U M B E R
IN TE R N A TIO N A L
R E C T IF IE R
L O G O
IR F P E 3 0
3 A 1 Q 9 3 0 2
D A TE C O D E
(Y YW W )
A S S E M B L Y
L O T
C O D E
YY
= YE A R
W W W E E K
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 4.3mH
as Coss while VDS is rising from 0 to 80% VDSS
R
G = 25Ω, IAS = 20A. (See Figure 12)
ISD ≤ 20A, di/dt ≤ 125A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
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Data and specifications subject to change without notice. 6/99
8
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