IRFBG20 [INFINEON]
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A); 功率MOSFET ( VDSS = 1000V , RDS(ON) = 11ohm ,ID = 1.4A )型号: | IRFBG20 |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A) |
文件: | 总6页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRFBG20STRR
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
VISHAY
IRFBG20STRRPBF
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
VISHAY
IRFBG22-011
Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFBG30-001PBF
Power Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFBG32
Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
©2020 ICPDF网 联系我们和版权申明