IRFBF22-005PBF [INFINEON]
Power Field-Effect Transistor, 1.5A I(D), 900V, 9.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | IRFBF22-005PBF |
| 厂家： | 
INFINEON TECHNOLOGIES AG |
| 描述： | Power Field-Effect Transistor, 1.5A I(D), 900V, 9.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网 脉冲 晶体管 |
| 文件： | 总1页 (文件大小：45K) |
| 下载： | 下载PDF数据表文档文件 |
IRFBF30
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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291
IRF
IRFBF30
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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48
VISHAY
IRFBF30
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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58
VISHAY
IRFBF30L
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
VISHAY
IRFBF30PBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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28
VISHAY
IRFBF30PBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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58
IRF
IRFBF30STRR
Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
IRFBF32
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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27
ETC
IRFBF32-006PBF
Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRFBF32-013
Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRFBG20
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
413
IRF
IRFBG20
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
235
VISHAY
IRFBG20PBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
45
VISHAY
IRFBG20PBF
HEXFET㈢ Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
72
IRF
IRFBG20STRR
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
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