IRFB7430_技术文档

StrongIRFET^TM

IRFB7430PbF

Applications

HEXFET^®Power MOSFET

l Brushed Motor drive applications

l BLDC Motor drive applications

l Battery powered circuits

l Half-bridge and full-bridge topologies

l Synchronous rectifier applications

l Resonant mode power supplies

l OR-ing and redundant power switches

l DC/DC and AC/DC converters

l DC/AC Inverters

D

S

V_DSS

40V

R_DS(on)typ.

max.

1.0mΩ

1.3mΩ

G

I_D

409A

(Silicon Limited)

I_D

195A

(Package Limited)

D

Benefits

S

D

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

G

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-220AB

IRFB7430PbF

G

Gate

D

S

l RoHS Compliant, Halogen-Free*

Drain

Source

Ordering Information

Base Part Number

Package Type

Standard Pack

Form

Tube

Complete Part Number

Quantity

IRFB7430PbF

TO-220

50

IRFB7430PbF

500

400

300

200

100

0

6.0

4.0

2.0

0.0

I

= 100A

D

Limited By Package

T

= 125°C

J

T

= 25°C

J

25

50

75

100

125

150

175

4

6

8

10

12 14 16

18 20

T

, Case Temperature (°C)

C

V

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Submit Datasheet Feedback February 19, 2015

Fig 1. Typical On-Resistance vs. Gate Voltage

1

IRFB7430PbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

409

289

195

1524

375

Units

A

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

P_D@T_C= 25°C

W

Maximum Power Dissipation

2.5

± 20

Linear Derating Factor

Gate-to-Source Voltage

W/°C

V

V_GS

T_J

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

10lbf in (1.1N m)

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

760

1452

mJ

E_{AS (Thermally limited)}

I_AR

Single Pulse Avalanche Energy

Avalanche Current

See Fig. 14, 15, 22a, 22b

A

Repetitive Avalanche Energy

E_AR

mJ

Thermal Resistance

Symbol

R_θJC

R_θCS

Parameter

Typ.

–––

0.50

–––

Max.

0.40

–––

62

Units

Junction-to-Case

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

R_θJA

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min.

Typ.

Max.

Units

Conditions

V_GS= 0V, I_D= 250μA

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

40

–––

V

V / T

_(BR)DSSΔ

––– 0.014 –––

V/°C Reference to 25°C, I_D= 1.0mA

Δ

J

m

Ω

–––

1.0

1.2

1.3

V_GS= 10V, I_D= 100A

R_DS(on)

–––

V_GS= 6.0V, I_D= 50A

V_DS= V_GS, I_D= 250μA

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 20V

V_GS(th)

I_DSS

Gate Threshold Voltage

2.2

–––

2.1

3.9

1.0

V

Drain-to-Source Leakage Current

μA

nA

Ω

150

100

-100

–––

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

V

_GS= -20V

R_G

Notes:

Calculated continuous current based on maximum allowable junction

ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.

temperature. Bond wire current limit is 195A. Note that current

C_osseff. (TR) is a fixed capacitance that gives the same charging time

limitations arising from heating of the device leads may occur with

someleadmountingarrangements.(RefertoAN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

as C_osswhile V_DSis rising from 0 to 80% V_DSS

.

C_osseff. (ER) is a fixed capacitance that gives the same energy as

C_osswhile V_DSis rising from 0 to 80% V_DSS

.

R_θis measured at T_Japproximately 90°C..

Limited by T_Jmax, starting T_J= 25°C, L = 0.15mH

R_G= 50Ω, I_AS= 100A, V_GS=10V.

Limited by T_Jmax, starting T_J= 25°C, L = 1mH, R_G= 50Ω, I_AS= 54A,

V_GS=10V.

I_SD≤ 100A, di/dt ≤ 990A/μs, V_DD≤ V_(BR)DSS, T_J≤ 175°C.

*

Halogen -Free since April 30, 2014

2

Submit Datasheet Feedback

February 2, 2015

IRFB7430PbF

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol Parameter

Forward Transconductance

Min.

150

–––

Typ.

–––

300

77

Max.

–––

460

–––

Units

S

Conditions

gfs

Q_g

V_DS= 10V, I_D= 100A

Total Gate Charge

nC

I_D= 100A

V_DS=20V

V_GS= 10V

Q_gs

Q_gd

Q_sync

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

98

202

32

ns

V_DD= 20V

I_D= 30A

Rise Time

105

160

100

t_d(off)

t_f

Turn-Off Delay Time

R = 2.7

Ω

G

Fall Time

V_GS= 10V

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 14240 –––

––– 2130 –––

––– 1460 –––

––– 2605 –––

––– 2920 –––

pF

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

ƒ = 1.0 MHz

C_osseff. (ER)

_osseff. (TR)

V_GS= 0V, V_DS= 0V to 32V

C

Diode Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

394

D

S

I_S

Continuous Source Current

–––

A

MOSFET symbol

(Body Diode)

showing the

G

I_SM

Pulsed Source Current

–––

––– 1576

A

V

integral reverse

(Body Diode)

p-n junction diode.

V_SD

dv/dt

t_rr

Diode Forward Voltage

Peak Diode Recovery

–––

0.86

2.7

52

1.2

–––

T_J= 25°C, I_S= 100A, V_GS= 0V

V/ns T_J= 175°C, I_S= 100A, V_DS= 40V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ns

nC

A

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 34V,

52

I_F= 100A

di/dt = 100A/μs

Q_rr

97

I_RRM

2.3

3

Submit Datasheet Feedback

February 2, 2015

IRFB7430PbF

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

4.8V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

4.8V

4.5V

TOP

BOTTOM

4.5V

60μs PULSE WIDTH

≤

60μs PULSE WIDTH

≤

Tj = 175°C

Tj = 25°C

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 3. Typical Output Characteristics

Fig 4. Typical Output Characteristics

1000

2.0

I

= 100A

= 10V

D

V

1.8

1.6

1.4

1.2

1.0

0.8

0.6

GS

100

10

T

= 25°C

J

T = 175°C

J

V

= 25V

DS

≤60μs PULSE WIDTH

1.0

2

3

4

5

6

7

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

100000

10000

1000

14.0

V

= 0V,

= C

f = 1 MHZ

GS

I = 100A

D

C

+ C , C

SHORTED

ds

iss

gs

gd

12.0

= C

rss

oss

gd

= C + C

V

= 32V

= 20V

DS

ds

gd

10.0

8.0

6.0

4.0

2.0

0.0

C

iss

C

oss

rss

1

10

, Drain-to-Source Voltage (V)

100

0

50 100 150 200 250 300 350 400

V

DS

Q , Total Gate Charge (nC)

G

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

Submit Datasheet Feedback February 2, 2015

4

IRFB7430PbF

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

T

= 175°C

J

100μsec

1msec

10msec

Limited by package

T

= 25°C

J

1

DC

10

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

0.1

1

100

0.0

0.5

1.0

1.5

2.0

2.5

V

, Drain-toSource Voltage (V)

V

, Source-to-Drain Voltage (V)

DS

SD

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode

Forward Voltage

2.5

47

46

45

44

43

42

41

40

Id = 1.0mA

V

= 0V to 32V

DS

2.0

1.5

1.0

0.5

0.0

0

5

10 15 20 25 30 35 40 45

Drain-to-Source Voltage (V)

-60 -40 -20 0 20 40 60 80 100120140160180

, Temperature ( °C )

T

J

V

DS,

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_OSSStored Energy

6.0

V

= 5.5V

= 6.0V

= 7.0V

= 8.0V

=10V

GS

4.0

2.0

0.0

0

200

400

600

800 1000 1200

I

, Drain Current (A)

D

Fig 13. Typical On-Resistance vs. Drain Current

5

February 2, 2015

IRFB7430PbF

1

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

800

700

600

500

400

300

200

100

0

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

I

D

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

25

50

75

100

125

150

175

E_{AS (AR)}= P_{D (ave)}·t_av

Starting T , Junction Temperature (°C)

J

Fig 16. Maximum Avalanche Energy vs. Temperature

6

Submit Datasheet Feedback

February 2, 2015

IRFB7430PbF

4.0

3.5

3.0

2.5

2.0

1.5

1.0

12

10

8

I = 60A

F

V

= 34V

R

T = 25°C

J

T = 125°C

J

6

I

= 250μA

= 1.0mA

= 1.0A

D

4

2

0

-75 -50 -25

0

25 50 75 100 125 150 175

0

200

400

600

800

1000

T , Temperature ( °C )

di /dt (A/μs)

J

F

Fig. 18 - Typical Recovery Current vs. di_f/dt

Fig 17. Threshold Voltage vs. Temperature

12

300

I = 100A

F

I = 60A

F

V

= 34V

V

= 34V

R

10

8

R

250

200

150

100

50

T = 25°C

J

T = 125°C

J

T = 125°C

J

6

4

2

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 19 - Typical Recovery Current vs. di_f/dt

Fig. 20 - Typical Stored Charge vs. di_f/dt

260

I = 100A

F

V

= 34V

R

220

180

140

100

60

T = 25°C

J

T = 125°C

J

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 21 - Typical Stored Charge vs. di_f/dt

7

February 2, 2015

IRFB7430PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

-

*

=10V

V

GS

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dtcontrolledbyR_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

InductorCurrent

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

2V0_GV_S

Ω

0.01

t

p

I

AS

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

PulseWidth ≤ 1 µs

Duty Factor≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Id

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

Submit Datasheet Feedback February 2, 2015

8

IRFB7430PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

9

Submit Datasheet Feedback

February 2, 2015

IRFB7430PbF

Qualification information

†

Qualification level

Industrial

(per JEDEC JESD47F^††guidelines)

Moisture Sensitivity Level

RoHS compliant

TO-220

Not applicable

Yes

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comment

•

Updated data sheet with new IR corporate template.

Updated package outline and part marking on page 9.

Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

Updated E_{AS (L =1mH)}= 1452mJ on page 2

4/22/2014

•

2/19/2015

Ω

Updated note 9 “Limited by T_Jmax, starting T = 25°C, L = 1mH, R_G= 50 , I_AS= 54A, V_GS=10V”. on page 2

J

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

10

Submit Datasheet Feedback

February 2, 2015

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

of

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.


型号：	IRFB7430
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
文件：	总11页 (文件大小：258K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFB7430 [INFINEON]

相关型号：

IRFB7430PBF

IRFB7434

IRFB7434

IRFB7434PBF

IRFB7437PBF

IRFB7440

IRFB7440

IRFB7440GPBF

IRFB7440PBF

IRFB7446

IRFB7446GPBF

IRFB7446PBF