IRFB4020 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRFB4020
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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PD - 97195

IRFB4020PbF

Key Parameters

DIGITAL AUDIO MOSFET

Features

• Key parameters optimized for Class-D audio

amplifier applications

V_DS

200

R_DS(ON)typ. @ 10V

Q_gtyp.

• Low R_DSONfor improved efficiency

• Low Q_Gand Q_SWfor better THD and improved

efficiency

Ω

Q_swtyp.

R_G(int)typ.

T_Jmax

6.7

3.2

175

°C

• Low Q_RRfor better THD and lower EMI

• 175°C operating junction temperature for

ruggedness

• Can deliver up to 300W per channel into 8Ω load in

half-bridge configuration amplifier

TO-220AB

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

200

±20

Units

V_DS

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

P_D@T_C= 25°C

P_D@T_C= 100°C

100

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.70

-55 to + 175

W/°C

°C

T_J

T_STG

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

1.43

–––

Units

Junction-to-Case

R_θJC

–––

0.50

–––

R_θ

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

R_θJA

Notes through ꢀare on page 2

www.irf.com

03/03/06

IRFB4020PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

V/°C Reference to 25°C, I_D= 1mA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

200

–––

3.0

–––

0.23

–––

100

4.9

/ T

∆

∆Β

DSS

Ω

R_DS(on)

V_GS(th)

V_GS= 10V, I_D= 11A

–––

-13

–––

V_DS= V_GS, I_D= 100µA

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

––– mV/°C

250

100

-100

–––

µA

V_DS= 200V, V_GS= 0V

V_DS= 200V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= -20V

_DS= 50V, I_D= 11A

g_fs

Q_g

–––

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

R_G(int)

t_d(on)

t_r

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

4.5

1.4

5.3

6.8

6.7

3.2

7.8

–––

V_DS= 100V

nC V_GS= 10V

I_D= 11A

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Internal Gate Resistance

Turn-On Delay Time

See Fig. 6 and 18

Ω

V_DD= 100V, V_GS= 10V

Rise Time

I_D= 11A

t_d(off)

t_f

Turn-Off Delay Time

ns R_G= 2.4Ω

Fall Time

6.3

C_iss

C_oss

C_rss

Input Capacitance

––– 1200 –––

V_GS= 0V

pF V_DS= 50V

ƒ = 1.0MHz,

Output Capacitance

–––

Reverse Transfer Capacitance

Effective Output Capacitance

Internal Drain Inductance

See Fig.5

C_osseff.

110

4.5

V_GS= 0V, V_DS= 0V to 160V

Between lead,

L_D

nH 6mm (0.25in.)

L_S

Internal Source Inductance

–––

7.5

–––

from package

and center of die contact

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

Max.

Units

E_AS

I_AR

–––

See Fig. 14, 15, 16a, 16b

Repetitive Avalanche Energy

E_AR

Diode Characteristics

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S@ T_C= 25°C

I_SM

–––

(Body Diode)

Pulsed Source Current

showing the

integral reverse

–––

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

1.3

120

420

T_J= 25°C, I_S= 11A, V_GS= 0V

ns T_J= 25°C, I_F= 11A

di/dt = 100A/µs

Q_rr

280

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 1.62mH, R_G= 25Ω, I_AS= 11A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

R is measured at T_Jof approximately 90°C.

ꢀ Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive

avalanche information.

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IRFB4020PbF

100

VGS

15V

12V

VGS

15V

12V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

5.0V

0.1

0.01

5.0V

60µs PULSE WIDTH

Tj = 175°C

≤

60µs PULSE WIDTH

Tj = 25°C

≤

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.5

100

= 11A

= 25V

= 10V

3.0

2.5

2.0

1.5

1.0

0.5

0.0

≤

60µs PULSE WIDTH

= 175°C

= 25°C

0.1

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

12.0

10000

1000

100

= 0V,

= C

f = 1 MHZ

I = 11A

+ C , C

SHORTED

iss

= C

10.0

rss

oss

= 160V

= 100V

= 40V

= C + C

iss

8.0

6.0

4.0

2.0

0.0

oss

rss

100

1000

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

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IRFB4020PbF

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

= 175°C

= 25°C

100µsec

0.1

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

0.01

0.001

= 0V

10msec

0.1

0.2

0.4

0.6

0.8

1.0

1.2

100

1000

, Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

5.0

4.0

3.0

2.0

1.0

= 100µA

100

125

150

175

-75 -50 -25

25 50 75 100 125 150175 200

, Junction Temperature (°C)

T , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Junction Temperature

Fig 10. Threshold Voltage vs. Temperature

D = 0.50

0.20

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

0.10

0.05

0.0283

0.3659

0.7264

0.3093

0.000007

0.000140

0.001376

0.007391

^Jτ_J

0.1

0.01

^Cτ

¹τ₁

Ci= τi/Ri

²τ₂

³τ₃

⁴τ₄

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB4020PbF

300

275

250

225

200

175

150

125

100

400

300

200

100

= 11A

TOP

1.6A

2.4A

BOTTOM 11A

= 125°C

= 25°C

10 11 12 13 14 15 16

100

125

150

175

Starting T , Junction Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

1000

Duty Cycle = Single Pulse

100

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆ Tj = 25°C due to

avalanche losses

0.01

0.05

0.10

0.1

0.01

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current Vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 17a, 17b.

100

TOP

BOTTOM 1.0% Duty Cycle

= 11A

Single Pulse

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

100

125

150

175

Starting T , Junction Temperature (°C)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

Fig 15. Maximum Avalanche Energy vs. Temperature

E_{AS (AR)}= P_{D (ave)}·t_av

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IRFB4020PbF

(BR)DSS

15V

DRIVER

D.U.T

20V

Ω

0.01

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

L_D

V_DS

90%

V_DD

10%

V_GS

D.U.T

V_GS

Pulse Width < 1µs

Duty Factor < 0.1%

t_d(on)

t_d(off)

t_r

t_f

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

Vds

Vgs

VCC

DUT

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 18a. Gate Charge Test Circuit

Fig 18b Gate Charge Waveform

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IRFB4020PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Note: "P" in assembly line

position indicates "Lead-Free"

TO-220AB packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/06

www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRFB4020 [INFINEON]

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