IRF9389_技术文档

IRF9389PbF

HEXFET^®Power MOSFET

N-CH P-CH

N-CHANNEL MOSFET

1

8

D1

S1

G1

V_DS

30

27

-30

64

V

2

7

R_{DS(on) max}

Q_{g (typical)}

m

nC

3

4

6

5

S2

D2

6.8

8.1

G2

P-CHANNEL MOSFET

I_D

Top View

SO-8

6.8

-4.6

A

(@T_A= 25°C)

Applications

l

HighandLowSideSwitchesforInverter

l

High and Low Side Switches for Generic Half-Bridge

Features

Benefits

High and low-side MOSFETs in a single package

High-side P-Channel MOSFET

Increased power density

Easier drive circuitry

Industry-standard pinout

results in Multi-vendor compatibility

Compatible with existing surface mount techniques

RoHS compliant containing no Lead, no Bromide and no Halogen

MSL1, Consumer qualification

Easier manufacturing

Environmentally friendlier

Increased reliability



Base Part Number Package Type

Standard Pack

Orderable part number

Form

Tube/Bulk

Quantity

95

IRF9389PbF

IRF9389TRPbF

IRF9389PbF

SO-8

Tape and Reel

4000

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

±20

V

V_GS

Gate-to-Source Voltage

±20

6.8

5.4

34

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-4.6

A

-3.7

-23

2.0

1.3

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

W

W/°C

°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.016

-55 to + 150

T_J

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max

20

62.5

Units

R_

JL

JA

°C/W

January 14, 2013

1

IRF9389PbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

Parameter

Min.

Typ.

–––

0.03

0.02

22

Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

N-Ch

P-Ch

30

–––

27

V

V_GS= 0V, I_D= 250μA

_GS= 0V, I_D= -250μA

-30

–––

1.3

V

V_DSS/T_JBreakdown Voltage Temp. Coefficient N-Ch

V/°C Reference to 25°C, I_D= 1mA

Reference to 25°C, I_D= -1mA

P-Ch

N-Ch



m

V

_GS= 10V, I_D= 6.8A

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

33

40

V_GS= 4.5V, I_D= 5.4A



m

P-Ch

51

64

V

_GS= -10V, I_D= -4.6A

_GS= -4.5V, I_D= -3.7A

82

103

2.3

V

V_GS(th)

N-Ch

1.8

V

V_DS= V_GS, I_D= 10μA

V_DS= V_GS, I_D= -10μA

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

-1.3

–––

8.2

-1.8

–––

6.8

8.1

1.4

1.3

0.98

2.1

2.2

9.4

5.1

8.0

4.8

14

-2.3

1.0

μA V_DS= 24V, V_GS= 0V

I_DSS

Drain-to-Source Leakage Current

-1.0

150

-150

100

-100

100

–––

14

V

_DS= -24V, V_GS= 0V

_DS= 24V, V_GS= 0V, T_J= 125°C

_DS= -24V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

nA V_GS= 20V

V_GS= -20V

V

_GS= -20V

V_GS= 20V

V_DS= 15V, I_D= 5.4A

gfs

Q_g

S

4.1

V_DS= -15V, I_D= -3.7A

N-Channel

–––

nC

16

V_GS= 10V, V_DS= 15V, I_D= 6.8A

Q_gs

Q_gd

R_G

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Gate Resistance

–––

4.4

P-Channel

V

_GS= -10V, V_DS= -15V, I_D= -4.6A



19

N-Channel

Turn-On Delay Time

Rise Time

–––

ns

V_DD= 15V, V_GS= 4.5V

I_D= 1.0A, R_G= 6.2

P-Channel

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

4.9

17

V_DD= -15V, V_GS= -4.5V



3.9

15

I_D= -1.0A, R_G= 6.8

N-Channel

C_iss

C_oss

C_rss

Input Capacitance

398

383

82

pF

V_GS= 0V, V_DS= 15V, ƒ = 1.0MHz

Output Capacitance

P-Channel

104

36

Reverse Transfer Capacitance

V_GS= 0V, V_DS= -15V, ƒ = 1.0KHz

64

Diode Characteristics

Conditions

Parameter

Min.

–––

Typ.

–––

8.4

Max. Units

I_S

Continuous Source Current (Body DiodeN-Ch

P-Ch

2.0

-2.0

34

A

I_SM

V_SD

t_rr

Pulsed Source Current (Body Diode)

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

-23

1.2

-1.2

13

Diode Forward Voltage

V

T = 25°C, I = 2.0A, V = 0V

J

S

GS

T = 25°C, I = -2.0A, V = 0V

J

S

GS

Reverse Recovery Time

ns N-Channel: T = 25°C, I = 2.0A,

J F

11

17

V_DD= 15V, di/dt = 102/μs

nC P-Channel: T = 25°C, I = -2.0A,

Q_rr

Reverse Recovery Charge

2.3

3.5

7.2

J

F

4.8

V_DD= -15V, di/dt = 102/μs

Notes:

Surface mounted on 1 in square Cu board

R_is measured at T_Japproximately 90°C

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 16)

Pulse width 400μs; duty cycle 2%.

January 14, 2013

2

IRF9389PbF

N-Channel

100

10

1

100

10

1

VGS

7.5V

6.5V

5.5V

4.5V

4.0V

3.5V

3.0V

2.75V

VGS

TOP

7.5V

6.5V

5.5V

4.5V

4.0V

3.5V

3.0V

2.75V

BOTTOM

2.75V

60μs PULSE WIDTH



60μs PULSE WIDTH



Tj = 150°C

Tj = 25°C

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

10

2.0

I

= 5.4A

D

V

= 4.5V

GS

1.5

1.0

0.5

T

= 150°C

J

T

= 25°C

J

1

V

= 15V

DS



60μs PULSE WIDTH

0.1

1

2

3

4

5

6

-60 -40 -20

0

20 40 60 80 100 120140 160

T

J

, Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs.Temperature

3

January 14, 2013

IRF9389PbF

N-Channel

10000

1000

100

14.0

12.0

10.0

8.0

V

= 0V,

= C

f = 1 MHZ

GS

I

= 6.8A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

V

= 24V

= 15V

= 6.0V

= C

DS

rss

oss

gd

= C + C

ds

gd

C

iss

6.0

C

oss

4.0

C

rss

2.0

10

0.0

1

10

, Drain-to-Source Voltage (V)

100

0

1

2

3

4

5

6

7

8

9

V

DS

Q , Total Gate Charge (nC)

G

Fig 5. Typical Capacitance vs.

Fig 6. Typical Gate Charge vs.

Drain-to-SourceVoltage

Gate-to-SourceVoltage

100

10

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

100μsec

1msec

T

= 150°C

J

10

1

10msec

T = 25°C

J

DC

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

V

= 0V

GS

0.1

0.2

0.4

V

0.6

0.8

1.0

1.2

1.4

0.1

1

10

100

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

SD

DS

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

January 14, 2013

4

IRF9389PbF

N-Channel

R_D

V_DS

7

6

5

4

3

2

1

0

V_GS

D.U.T.

R_G

+

-

V_DD

V_GS

Pulse Width µs

Duty Factor 

Fig 10a. Switching Time Test Circuit

V

DS

25

50

75

100

125

150

90%

T

, Ambient Temperature (°C)

A

10%

V

GS

Fig 9. Maximum Drain Current vs.

t

r

t

f

d(on)

d(off)

AmbientTemperature

Fig 10b. Switching Time Waveforms

100

120

110

100

90

I

= 6.8A

D

80

60

40

20

80

70

60

Vgs = 4.5V

Vgs = 10V

50

40

30

20

2

4

6

8

10 12 14 16 18 20

0

5

10 15 20 25 30 35 40 45

, Drain Current (A)

I

D

V

Gate -to -Source Voltage (V)

GS,

Fig 11. Typical On-Resistance vs. Gate

Fig 12. Typical On-Resistance vs. Drain

Voltage

Current

5

January 14, 2013

IRF9389PbF

N-Channel

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

20000

16000

12000

8000

4000

0

I

= 10μA

D

-75 -50 -25

0

25 50 75 100 125 150

1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2

T

, Temperature ( °C )

J

Time (sec)

Fig 14. Typical Power vs. Time

Fig 13. Threshold Voltage vs. Temperature

Current Regulator

Same Type as D.U.T.

50K

Q

G

.2F

12V

.3F

V_GS

+

Q

V

DS

GS

GD

D.U.T.

-

V

GS

V

G

3mA

I

D

G

Charge

Current Sampling Resistors

Fig 15a. Basic Gate Charge Waveform

Fig 15b. Gate Charge Test Circuit

January 14, 2013

6

IRF9389PbF

N and P-Channel

100

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

1

0.1

SINGLE PULSE

( THERMAL RESPONSE )

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

A

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

t

, Rectangular Pulse Duration (sec)

1

Fig 16. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

7

January 14, 2013

IRF9389PbF

P-Channel

100

10

1

100

10

1

VGS

TOP

-8.0V

-7.0V

-6.0V

-5.0V

-4.5V

-3.5V

-3.0V

-2.75V

TOP

-8.0V

-7.0V

-6.0V

-5.0V

-4.5V

-3.5V

-3.0V

-2.75V

BOTTOM

-2.75V

60μs PULSE WIDTH

Tj = 150°C



60μs PULSE WIDTH

Tj = 25°C



0.1

1

10

100

0.1

1

10

100

-V , Drain-to-Source Voltage (V)

DS

-V , Drain-to-Source Voltage (V)

DS

Fig 17. Typical Output Characteristics

Fig 18. Typical Output Characteristics

100

10

1.6

I

= -3.7A

D

V

= -4.5V

GS

1.4

1.2

1.0

0.8

0.6

T

= 150°C

J

T = 25°C

J

1

V

= -15V

DS



60μs PULSE WIDTH

0.1

1

2

3

4

5

6

7

-60 -40 -20

0

20 40 60 80 100 120140 160

T

J

, Junction Temperature (°C)

-V , Gate-to-Source Voltage (V)

GS

Fig 19. Typical Transfer Characteristics

Fig 20. Normalized On-Resistance

vs.Temperature

January 14, 2013

8

IRF9389PbF

P-Channel

14.0

12.0

10.0

8.0

10000

1000

100

V

= 0V,

= C

f = 1 MHZ

GS

I = -4.6A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

= C

rss

oss

gd

= C + C

V

= -24V

= -15V

= -6.0V

DS

ds

gd

V

DS

C

iss

C

oss

6.0

rss

4.0

2.0

0.0

10

0

2

4

6

8

10

12

1

10

-V , Drain-to-Source Voltage (V)

100

Q

Total Gate Charge (nC)

G

DS

Fig 22. Typical Gate Charge vs.

Fig 21. Typical Capacitance vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100.00

100

10

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

100μsec

1msec

10msec

10.00

1.00

0.10

T

= 150°C

J

1

T

= 25°C

V

DC

J

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

GS

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1

10

100

-V , Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

SD

DS

Fig 23. Typical Source-Drain Diode

Fig 24. Maximum Safe Operating Area

Forward Voltage

9

January 14, 2013

IRF9389PbF

P-Channel

R_D

V_DS

5.0

4.0

3.0

2.0

1.0

0.0

V_GS

D.U.T.

R_G

-

V_DD

+

V_GS

Pulse Width µs

Duty Factor 

Fig 26a. Switching Time Test Circuit

t

r

t

f

d(on)

d(off)

V

GS

25

50

75

100

125

150

10%

T

, Ambient Temperature (°C)

A

90%

V

Fig 25. Maximum Drain Current vs.

DS

AmbientTemperature

Fig 26b. Switching Time Waveforms

600

500

200

I

= -4.6A

D

160

120

80

Vgs = -4.5V

400

300

200

Vgs = -10V

100

0

40

2

4

6

8

10 12 14 16 18 20

0

5

10

15

20

25

30

-I , Drain Current (A)

D

-V

Gate -to -Source Voltage (V)

GS,

Fig 28. Typical On-Resistance vs. Drain

Current

Fig 27. Typical On-Resistance vs. Gate

Voltage

January 14, 2013

10

IRF9389PbF

P-Channel

20000

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

16000

12000

8000

4000

0

I

= -10μA

D

1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2

-75 -50 -25

0

25 50 75 100 125 150

Time (sec)

T

, Temperature ( °C )

J

Fig 29. Threshold Voltage vs. Temperature

Fig 30. Typical Power vs. Time

Current Regulator

Same Type as D.U.T.

50K

.2F

12V

Q

G

.3F

-

V

+

DS

D.U.T.

Q

GD

GS

V

GS

V

G

-3mA

I

D

G

Current Sampling Resistors

Charge

Fig 31a. Basic Gate Charge Waveform

Fig 31b. Gate Charge Test Circuit

11

January 14, 2013

IRF9389PbF

SO-8 Package Details

SO-8 Part Marking

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

January 14, 2013

12

IRF9389PbF

Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13

January 14, 2013

IRF9389PbF

Qualification information^†

Cons umer

Qualification level

(per JE DEC JES D47F ^††guidelines)

MS L1

Moisture Sensitivity Level

RoHS compliant

SO-8

(per JE DEC J-S TD-020D^††

Yes

)

Qualification standards can be found at International Rectifiers web site:

http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

January 14, 2013

14

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

of

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.


型号：	IRF9389
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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IRF9389 [INFINEON]

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