IRF7205TRPBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF7205TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总9页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7205PbF-1
HEXFET® Power MOSFET
A
VDS
-30
V
1
2
3
4
8
D
S
S
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
7
0.07
Ω
D
6
S
G
D
0.13
27
Ω
nC
A
5
D
SO-8
Top View
-4.6
(@TA = 25°C)
Features
Industry-standard pinout SO-8 Package
Benefits
Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7205PbF-1
IRF7205TRPbF-1
IRF7205PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Max.
-4.6
-3.7
-15
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.020
± 20
-3.0
VGS
Gate-to-Source Voltage
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/nS
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient -0.024 V/°C Reference to 25°C, ID = -1mA
0.070
0.130
-1.0 -3.0
6.6
-1.0
-5.0
-100
100
VGS = -10V, ID = -4.6A
VGS = -4.5V, ID = -2.0A
VDS = VGS, ID = -250µA
VDS = -15V, ID = -4.6A
VDS = -24V, VGS = 0V
VDS = -15V, VGS = 0V, TJ = 70 °C
VGS = -20V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
Qgs
Qgd
td(on)
tr
27
40
ID = -4.6A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
5.2
7.5
nC VDS = -15V
VGS = -10V
VDD = -15V
14
21
30
60
RiseTime
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
97 150
71 100
RG = 6.0Ω
RD = 10Ω
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
2.5
4.0
Between lead,6mm(0.25in.)
nH
pF
G
from package and center
of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
870
720
220
Output Capacitance
VDS = -10V
Reverse Transfer Capacitance
= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
showing the
D
S
IS
-2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-15
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
-1.2
70 100
100 180
V
TJ = 25°C, IS = -1.25A, VGS = 0V
ns
TJ = 25°C, IF = -4.6A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 10sec.
ISD ≤ -4.6A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
3
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
12
4
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
Current Regulator
Same Type as D.U.T.
50KΩ
Q
.2μF
.3μF
G
12V
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
Fig 12a. Basic Gate Charge Waveform
6
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[ ]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig13. ForP-ChannelHEXFETS
7
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIME TE RS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF7205PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
相关型号：
IRF7207TR
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
INFINEON
IRF7207TRPBF
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
INFINEON
IRF720A
Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
IRF720AJ
Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
IRF720AJ69Z
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
IRF720BJ69Z
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明