IRF6655PBF [INFINEON]
DirectFET Power MOSFET; DirectFET功率MOSFET
| 型号： | IRF6655PBF |
| 厂家： | 
Infineon |
| 描述： | DirectFET Power MOSFET |
| 文件： | 总10页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97226A
IRF6655PbF
IRF6655TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs Compliant
RDS(on)
VDSS
VGS
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
53mΩ@ 10V
100V max ±20V max
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V-75V in
Synchronous Buck applications
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.7nC 2.8nC 0.58nC 37nC
4.5nC
4.0V
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
SH
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
The IRF6655PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655PbF is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets
in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
100
±20
4.2
3.4
19
Parameter
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
A
34
DM
EAS
IAR
11
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
5.0
200
180
160
140
120
100
80
12.0
10.0
8.0
V
V
V
= 80V
I = 5.0A
D
I
= 5.0A
DS
DS
DS
D
= 50V
= 20V
T
= 125°C
J
6.0
4.0
60
40
20
0
2.0
T
= 25°C
12
J
0.0
4
6
8
10
14
16
18
0
2
4
6
8
10
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical On-Resistance Vs. Gate Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
08/25/06
IRF6655PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
2.8
–––
0.12
53
–––
–––
62
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
∆ΒVDSS/∆TJ
RDS(on)
VGS = 10V, ID = 5.0A i
VDS = VGS, ID = 25µA
VGS(th)
4.0
-11
–––
–––
–––
–––
–––
8.7
2.1
0.58
2.8
3.2
3.4
4.5
1.9
7.4
2.8
14
4.8
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
6.6
––– mV/°C
V
DS = 100V, VGS = 0V
20
250
100
-100
–––
11.7
–––
–––
4.2
µA
nA
S
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 10V, ID = 5.0A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 50V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
VGS = 10V
ID = 5.0A
nC
–––
–––
–––
2.9
See Fig. 15
VDS = 16V, VGS = 0V
nC
Gate Resistance
Ω
VDD = 50V, VGS = 10Vꢁi
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 5.0A
Rise Time
RG=6.0Ω
See Fig. 16 & 17
VGS = 0V
Turn-Off Delay Time
ns
Fall Time
4.3
530
110
29
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
VDS = 25V
ƒ = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, f=1.0MHz
510
67
VGS = 0V, VDS = 80V, f=1.0MHz
Output Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
D
IS
–––
–––
38
showing the
(Body Diode)
A
G
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁg
–––
–––
34
S
p-n junction diode.
TJ = 25°C, IS = 5.0A, VGS = 0V i
TJ = 25°C, IF = 5.0A, VDD = 25V
di/dt = 100A/µs iꢁSee Fig. 18
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
31
1.3
47
56
V
ns
nC
Qrr
37
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF6655PbF
Absolute Maximum Ratings
Max.
2.2
Parameter
Units
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
P
J
1.4
42
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
58
Units
°C/W
W/°C
Rθ
Rθ
Rθ
Rθ
Rθ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
3.0
JA
JA
–––
1.4
JC
Junction-to-PCB Mounted
Linear Derating Factor
–––
J-PCB
0.017
100
10
D = 0.50
0.20
0.10
0.05
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
0.02
0.01
1.6195
2.1406
0.000126
0.001354
1
τ
τ
J τJ
τ
AτA
1 τ1
τ
τ
τ
τ
2 τ2
3 τ3
4 τ4
5 τ5
22.2887 0.375850
20.0457 7.410000
Ci= τi/Ri
Ci= τi/Ri
0.1
11.9144
99
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
3
IRF6655PbF
100
100
10
1
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
10
6.0V
6.0V
1
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
I
= 5.0A
D
V
= 10V
GS
10
T
T
T
= -40°C
= 25°C
= 150°C
J
J
J
1
V
= 25V
DS
≤
60µs PULSE WIDTH
10
, Gate-to-Source Voltage (V)
0.1
2
4
6
8
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
10000
120
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
T
= 125°C
ds
gd
J
100
80
1000
100
10
C
iss
C
oss
T
= 25°C
J
60
C
rss
Vgs = 10V
8 10
40
1
10
, Drain-to-Source Voltage (V)
100
0
2
4
6
V
I , Drain Current (A)
DS
D
Fig 9. Normalized Typical On-Resistance vs.
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Drain Current and Gate Voltage
4
www.irf.com
IRF6655PbF
100
10
1
1000
100
10
Tc = 25°C
Tj = 175°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
100msec
1msec
T
T
T
= -40°C
= 25°C
= 150°C
1
J
J
J
10msec
0.1
0.01
V
= 0V
GS
0.4
0.6
V
0.8
1.0
1.2
1.4
1.6
0
1
10
100
1000
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
5.5
5
5
4
3
2
1
0
4.5
4
3.5
3
I
I
I
I
= 25µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
2.5
2
-75 -50 -25
0
25 50 75 100 125 150 175
25
50
75
100
125
150
T
, Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 12. Maximum Drain Current vs. Ambient Temperature
Fig 13. Threshold Voltage vs. Temperature
50
I
D
TOP
0.86A
1.3A
40
30
20
10
0
BOTTOM 5.0A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6655PbF
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
VGS
10V
td(on)
td(off)
tr
tf
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6655PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, SH Outline
(Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
www.irf.com
7
IRF6655PbF
DirectFET Outline Dimension, SH Outline
(Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
MIN
METRIC
MAX
CODE MIN
MAX
0.191
0.156
0.112
0.018
0.024
0.024
0.026
0.034
0.041
0.092
0.0274
0.0031
0.007
4.85
3.95
A
B
C
D
E
F
0.187
0.146
4.75
3.70
2.75
0.35
0.58
0.58
0.63
0.83
0.99
2.29
0.616
0.020
0.08
2.85 0.108
0.45
0.62
0.62
0.67
0.014
0.023
0.023
0.025
G
H
K
L
0.87 0.033
1.03
2.33 0.090
0.039
0.676
0.080
0.17
M
R
P
0.0235
0.0008
0.003
DirectFET Part Marking
8
www.irf.com
IRF6655PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6655TRPBF). For 1000 parts on 7"
reel, order IRF6655TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/06
www.irf.com
9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明