IRF623-012PBF [INFINEON]

Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
IRF623-012PBF
型号: IRF623-012PBF
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

局域网 脉冲 晶体管
文件: 总1页 (文件大小:42K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRF623-013PBF

Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF623FI

3.5A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET
STMICROELECTR

IRF623PBF

Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON

IRF623R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | TO-220AB
ETC

IRF624

250V N-Channel MOSFET
FAIRCHILD

IRF624

Power MOSFET
VISHAY

IRF624

3.8A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
RENESAS

IRF624

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
SAMSUNG

IRF624

3.8A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
ROCHESTER

IRF624-001

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF624-001PBF

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON

IRF624-005PBF

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
VISHAY