IRF5M5210A [INFINEON]

Power Field-Effect Transistor,;

IRF5M5210A


型号：	IRF5M5210A
厂家：	INFINEON TECHNOLOGIES AG
描述：	Power Field-Effect Transistor, 局域网开关脉冲晶体管
文件：	总7页 (文件大小：458K)
下载：	下载PDF数据表文档文件

IRF5M5210DPBF

Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN

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0 IRF

IRF5M5210SCS

Power Field-Effect Transistor,

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1 INFINEON

IRF5M5210U

Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN

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0 IRF

IRF5M5210UPBF

暂无描述

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0 IRF

IRF5N3205

POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)

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29 IRF

IRF5N3205

HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)

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23 IRF

IRF5N3205_05

HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)

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13 IRF

IRF5N3415

POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.042ohm, Id=37.5A)

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73 IRF

IRF5N3710

POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)

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79 IRF

IRF5N4905

POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.024ohm, Id=-55A*)

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87 IRF

IRF5N5210

POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.060ohm, Id=-31A)

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169 IRF

IRF5N5210

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

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4 INFINEON

IRF5N5210PBF

暂无描述

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0 IRF

IRF5N5210SCS

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET,

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1 INFINEON

IRF5N5210SCX

Transistor,

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2 INFINEON

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