IRF40H210_15 [INFINEON]
Brushed Motor drive applications;
| 型号： | IRF40H210_15 |
| 厂家： | 
Infineon |
| 描述： | Brushed Motor drive applications |
| 文件： | 总11页 (文件大小：570K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRF40H210
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
RDS(on) typ.
max
40V
1.4m
1.7m
ID (Silicon Limited)
ID (Package Limited)
201A
100A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
PQFN 5 x 6 mm
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRF40H210
PQFN 5mm x 6mm
Tape and Reel
4000
IRF40H210
225
200
175
150
125
100
75
6
5
4
3
2
1
0
I
= 100A
D
Limited by package
T
T
= 125°C
= 25°C
J
50
25
J
0
25
50
75
100
125
150
2
4
6
8
10 12 14 16 18 20
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRF40H210
Absolute Maximum Rating
Symbol
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V
Parameter
Max.
201
127
Units
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V(Wire Bond Limited)
100
400*
125
1.0
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
PD @TC = 25°C
W
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
149
370
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RJC (Bottom)
RJC (Top)
Parameter
Junction-to-Case
Typ.
–––
–––
–––
–––
Max.
1.0
18
Units
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
RJA
33
RJA (<10s)
20
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
40
––– –––
V
–––
42
V(BR)DSS/TJ
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
2.2 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
1.4
2.3
1.7
–––
3.7
1.0
VGS = 10V, ID = 100A
m
V
VGS = 6.0V, ID = 50A
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
VDS = VGS, ID = 150µA
VDS = 40 V, VGS = 0V
µA
V
DS = 40V,VGS = 0V,TJ =125°C
VGS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
nA
V
RG
–––
2.6
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A
by source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.030mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1117A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 27A, VGS =10V.
Pulse drain current is limited by source bonding technology.
*
2
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IRF40H210
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
113
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
101
30
–––
152
–––
–––
–––
–––
–––
S
VDS = 10V, ID = 100A
Qg
ID = 100A
VDS = 20V
VGS = 10V
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
nC
Qgd
31
Qsync
td(on)
tr
70
9.2
25
VDD = 20V
ID = 30A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
65
34
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5406
805
518
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
–––
–––
962
–––
–––
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Coss eff.(TR)
Output Capacitance (Time Related)
1179
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS
–––
––– 100
G
A
S
ISM
–––
–––
–––
0.8
400*
1.2
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 100A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
6.2
21
22
32
38
––– V/ns TJ = 150°C,IS = 100A,VDS = 40V
–––
–––
–––
–––
TJ = 25°C
VR = 34V,
IF = 100A
di/dt = 100A/µs
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
TJ = 25°C
IRRM
–––
1.0
–––
3
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IRF40H210
10000
1000
100
10
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.25V
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.25V
TOP
TOP
BOTTOM
BOTTOM
4.25V
4.25V
60µs
1
60µs
PULSE WIDTH
PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
10000
1000
100
10
I
= 100A
= 10V
D
V
GS
T
= 150°C
J
T
= 25°C
J
1
V
= 10V
DS
60µs PULSE WIDTH
0.1
2
4
6
8
10
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
C
= 0V,
f = 1 MHZ
GS
I
= 100A
= C + C , C SHORTED
D
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
V
= 32V
DS
C
= C + C
oss
ds
gd
VDS= 20V
C
iss
C
6.0
oss
rss
C
4.0
2.0
100
0.0
0.1
1
10
100
0
20
40
60
80
100 120 140
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRF40H210
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
1000
100
10
DS
100µsec
1msec
Limited by Package
T
= 150°C
J
T
= 25°C
V
1
J
10msec
DC
1
Tc = 25°C
0.1
0.01
= 0V
Tj = 150°C
Single Pulse
GS
0.1
0.1
1
10
0.1
0.4
0.7
1.0
1.3
1.6
1.9
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
49
0.8
Id = 1.0mA
47
45
43
41
39
37
0.6
0.4
0.2
0.0
-60 -40 -20
0
T
20 40 60 80 100 120 140 160
, Temperature ( °C )
0
5
10 15 20 25 30 35 40 45
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
14
VGS = 5.0V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
12
10
8
6
4
2
0
0
50
100
150
200
I
, Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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April 1, 2015
IRF40H210
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
160
140
120
100
80
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1.0% Duty Cycle
I
= 100A
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
60
40
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
20
0
tav = Average time in avalanche.
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRF40H210
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
8
I
= 60A
= 34V
F
V
R
T = 25°C
J
T = 125°C
J
6
4
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
2
0
-75 -50 -25
T
0
25 50 75 100 125 150
0
200
400
600
800
1000
, Temperature ( °C )
di /dt (A/µs)
J
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
10
250
I
= 100A
= 34V
I
= 60A
= 34V
F
F
V
V
R
R
8
6
4
2
0
200
150
100
50
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
200
I
= 100A
F
V
= 34V
R
T = 25°C
J
150
100
50
T = 125°C
J
0
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRF40H210
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
I
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRF40H210
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRF40H210
PQFN Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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April 1, 2015
IRF40H210
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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