IRF250P225 [INFINEON]
增强体二极管 dv/dt 和 di/dt 能力;
| 型号： | IRF250P225 |
| 厂家： | 
Infineon |
| 描述： | 增强体二极管 dv/dt 和 di/dt 能力 二极管 |
| 文件： | 总17页 (文件大小：1065K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF250P225
MOSFET
StrongIRFET™
VDSS
250V
RDS(on) typ.
18m
22m
69A
max
Applications
ID
UPS and Inverter applications
Half-bridge and full-bridge topologies
Resonant mode power supplies
DC/DC and AC/DC converters
OR-ing and redundant power switches
Brushed and BLDC Motor drive applications
Battery powered circuits
Benefits
G
Gate
D
Drain
S
Source
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free ; RoHS Compliant ; Halogen-Free
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
IRF250P225
TO-247AC
Tube
25
IRF250P225
75
65
55
45
35
25
15
5
75
60
45
30
15
0
I
= 41A
D
T
J
= 125°C
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
V
Gate -to -Source Voltage (V)
T
, Case Temperature (°C)
GS,
C
Figure 1 Typical On-Resistance vs. Gate Voltage
Figure 2 Maximum Drain Current vs. Case Temperature
Final Datasheet
www.infineon.com
Please read the important Notice and Warnings at the end of this document
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Table of Contents
Table of Contents
Applications
Benefits
…..………………………………………………………………………...……………..……………1
…..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1
2
3
4
Parameters ………………………………………………………………………………………………3
Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
Electrical characteristics ………………………………………………………………………………5
Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………14
Qualification Information ……………………………………………………………………………………………15
Revision History …………………………………………………………………………………………..…………16
Final Datasheet
2
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Parameters
1
Parameters
Table1
Key performance parameters
Values
Parameter
Units
VDS
250
22
V
RDS(on) max
m
ID
69
A
Final Datasheet
3
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2020-01-07
StrongIRFET™
IRF250P225
Maximum ratings and thermal characteristics
2
Maximum ratings and thermal characteristics
Table 2
Maximum ratings (at TJ=25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
ID
ID
IDM
PD
TC = 25°C, VGS @ 10V
TC = 100°C, VGS @ 10V
TC = 25°C
69
49
276
313
2.1
± 20
A
TC = 25°C
TC = 25°C
W
W/°C
V
Gate-to-Source Voltage
VGS
-
Operating Junction and
TJ
-
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
TSTG
°C
-
-
-
-
-
300
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Table 3
Thermal characteristics
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Symbol
Conditions
TJ approximately 90°C
Min.
Typ.
Max.
0.48
-
Unit
-
-
-
-
0.24
-
R
JC
-
-
°C/W
R
CS
40
R
JA
Table 4
Avalanche characteristics
Parameter
Symbol
EAS (Thermally limited)
EAS (Thermally limited)
IAR
Values
444
Unit
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
489
A
See Fig 16, 17, 23a, 23b
EAR
mJ
Repetitive Avalanche Energy
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.52mH, RG = 50, IAS = 41A, VGS =10V.
ISD 41A, di/dt 926A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
R is measured at TJ approximately 90°C.
.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 31A, VGS =10V.
Final Datasheet
4
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Electrical characteristics
3
Electrical characteristics
Table 5
Static characteristics
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
Unit
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS = 0V, ID = 1mA
Reference to 25°C, ID = 2.5mA
VGS = 10V, ID = 41A
250
-
-
-
-
-
22
V
V/°C
0.17
18
m
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 270µA
VDS =200V, VGS =0V
2.0
-
-
-
-
-
4.0
1.0
100
V
Drain-to-Source Leakage Current
IDSS
µA
V
DS =200V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate Resistance
IGSS
RG
VGS = 20V
-
-
-
100
-
nA
2.7
Table 6
Dynamic characteristics
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
Unit
Forward Trans conductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
V
DS = 50V, ID =41A
72
-
-
-
64
24
-
96
-
-
-
-
-
-
-
-
-
-
S
ID = 41A
VDS = 125V
VGS = 10V
nC
ns
-
-
-
-
-
-
-
-
-
12
52
17
54
52
36
4897
505
6.1
VDD = 163V
ID = 41A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance
Coss eff.(ER)
Coss eff.(TR)
-
-
372
607
-
-
VGS = 0V, VDS = 0V to 200V
VGS = 0V, VDS = 0V to 200V
(Energy Related)
Output Capacitance (Time Related)
Table 7
Reverse Diode
Values
Parameter
Symbol
Conditions
Unit
Min. Typ. Max.
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
IS
-
-
69
showing the
G
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 41A,VGS = 0V
ISM
S
-
-
-
-
276
1.2
Diode Forward Voltage
VSD
V
dv/dt
TJ = 175°C, IS = 41A,VDS = 250V
-
-
-
-
-
-
25
-
-
-
-
-
-
V/ns
Peak Diode Recovery dv/dt
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
113
155
427
878
5.7
VDD = 213V
IF = 41A,
di/dt = 100A/µs
Reverse Recovery Time
trr
ns
Reverse Recovery Charge
Reverse Recovery Current
Qrr
nC
A
IRRM
Final Datasheet
5
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2020-01-07
StrongIRFET™
IRF250P225
Electrical characteristic diagrams
4
Electrical characteristic diagrams
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Figure 4 Typical Output Characteristics
Figure 3 Typical Output Characteristics
1000
100
3.0
I
= 41A
D
V
= 10V
2.5
2.0
1.5
1.0
0.5
0.0
GS
T
= 175°C
J
T
= 25°C
= 50V
J
10
1.0
V
DS
60µs PULSE WIDTH
0.10
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
T , Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
J
Figure 5 Typical Transfer Characteristics
Figure 6 Normalized On-Resistance vs. Temperature
Final Datasheet
6
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Electrical characteristic diagrams
1000000
14
12
10
8
V
= 0V, f = 1 MHZ
GS
iss
rss
oss
I = 41A
D
C
C
C
= C + C , C SHORTED
gs
gd ds
= C
100000
10000
1000
100
gd
= C + C
VDS= 200V
ds
gd
VDS= 125V
C
iss
C
oss
6
VDS= 50V
C
rss
4
10
2
1
0
1
10
100
1000
0
10 20 30 40 50 60 70 80 90 100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Figure 8 Typical Gate Charge vs. Gate-to-Source
Voltage
Figure 7 Typical Capacitance vs. Drain-to-Source
Voltage
1000
100
T = 175°C
J
10
1
T = 25°C
J
V
= 0V
GS
0.1
0.0
0.4
V
0.8
1.2
1.6
2.0
, Source-to-Drain Voltage (V)
SD
Figure 9 Typical Source-Drain Diode Forward
Voltage
Final Datasheet
7
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Electrical characteristic diagrams
1000
100
10
100µsec
1msec
OPERATION IN THIS AREA
LIMITED BY R (on)
10msec
DS
1
0.1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
Figure 10 Maximum Safe Operating Area
12
10
8
300
Id = 2.5mA
290
280
270
260
250
240
6
4
2
0
0
25 50 75 100 125 150 175 200 225 250 275
Drain-to-Source Voltage (V)
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
V
T , Temperature ( °C )
J
DS,
Figure 11 Drain-to-Source Breakdown Voltage
Figure 12 Typical Coss Stored Energy
Final Datasheet
8
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Electrical characteristic diagrams
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
60
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
50
40
30
20
10
I = 270µA
D
ID = 1.0mA
I = 1.0A
D
-75 -50 -25
0
25 50 75 100 125 150 175
0
25
50
75 100 125 150 175 200
T , Temperature ( °C )
I , Drain Current (A)
D
J
Figure 13 Typical On-Resistance vs. Drain
Current
Figure 14 Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
0.001
0.0001
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case
Final Datasheet
9
V2.1
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StrongIRFET™
IRF250P225
Electrical characteristic diagrams
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs
avalanche pulsewidth, tav, assuming
Tj = 25°C and Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Figure 16 Avalanche Current vs. Pulse Width
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1.Avalanche failures assumption:
500
TOP
BOTTOM 1.0% Duty Cycle
= 41A
Single Pulse
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
I
400
300
200
100
0
D
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. DT = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Figure 17 Maximum Avalanche Energy vs.
Temperature
Final Datasheet
10
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StrongIRFET™
IRF250P225
Electrical characteristic diagrams
60
50
40
30
20
10
0
60
I = 41A
F
I = 41A
F
V = 213V
V = 213V
R
50
40
30
20
10
0
R
T = 25°C
J
T = 25°C
J
T = 125°C
T = 125°C
J
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Figure 19 Typical Recovery Current vs. dif/dt
Figure 18 Typical Recovery Current vs. dif/dt
3500
3000
I = 41A
F
I = 28A
F
3000
2500
2000
1500
1000
500
V = 213V
V = 213V
R
2500
2000
1500
1000
500
R
T = 25°C
J
T = 25°C
J
T = 125°C
T = 125°C
J
J
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Figure 21 Typical Stored Charge vs. dif/dt
Figure 20 Typical Stored Charge vs. dif/dt
Final Datasheet
11
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Electrical characteristic diagrams
Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs
Figure 23b Unclamped Inductive Waveforms
Figure 23a Unclamped Inductive Test Circuit
Final Datasheet
12
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Electrical characteristic diagrams
Figure 24b Switching Time Waveforms
Figure 24a Switching Time Test Circuit
Figure 25b Gate Charge Waveform
Figure 25a Gate Charge Test Circuit
Final Datasheet
13
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Package Information
5
Package Information
TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Final Datasheet
14
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Qualification Information
6
Qualification Information
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F) †
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
N/A
Yes
†
Applicable version of JEDEC standard at the time of product release.
Final Datasheet
15
V2.1
2020-01-07
StrongIRFET™
IRF250P225
Revision History
Revision History
Major changes since the last revision
Page or Reference Revision
Date
Description of changes
All pages
All pages
2.0
2.1
2017-03-16
First release data sheet.
Update from “IR MOSFT/StrongIRFET™” to “StrongIRFET™” -all pages
Update Package picture –page1
2020-01-07
Final Datasheet
16
V2.1
2020-01-07
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
For further information on the product, technology,
Edition 2015-05-06
Published by
Infineon Technologies AG
81726 Munich, Germany
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
© 2016 Infineon Technologies AG.
All Rights Reserved.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Do you have a question about this
document?
Email: erratum@infineon.com
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In addition, any information given in this document
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