IRF1704PBF [INFINEON]
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3;
| 型号： | IRF1704PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -94012C
AUTOMOTIVE MOSFET
IRF1704
HEXFET® Power MOSFET
Benefits
l 200°C Operaing Temperature
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Repetitive Avalanche Allowed
up to Tj Max
l Automotive Qualified (Q101)
Description
D
VDSS = 40V
RDS(on) = 0.004Ω
G
ID = 170A
S
Specifically designed for Automotive applications, this HEXFET® power
MOSFET has a 200°C max operating temperature with a Stripe Planar
design that utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this HEXFET® power
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200°C
operating temperature in a plastic package. At high ambient temperatures, the
IRF1704 can carryupto 20%morecurrentthansimilar 175°CTjmax devices
in the same package outline. This makes this part ideal for existing and
emerging under-the-hood automotive applications such as Electric Power
Steering (EPS), Fuel / Water Pump Control and wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
170
120
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
680
PD @TC = 25°C
Power Dissipation
230
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Avalanche Current
670
mJ
A
100
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
23
mJ
V/ns
1.9
-55 to + 200
TSTG
TLEAD
Storage Temperature Range
Lead Temperature
°C
°C
175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.75
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
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1
05/08/02
IRF1704
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Conditions
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.004
Ω
VGS = 10V, ID = 100A
VDS = VGS, ID = 250µA
2.0
1.0
––– 4.0
––– –––
V
VGS
( th)
Gate Threshold Voltage
VDS = VGS, ID = 5.0mA, TJ = 200°C
VDS = 25V, ID = 100A
gfs
Forward Transconductance
110 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 170 260
S
VDS = 40V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
VDS = 32V, VGS = 0V, TJ = 175°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
IGSS
nA
VGS = -20V
ID = 100A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
42
39
63
59
nC VDS = 32V
VGS = 10V, See Fig. 6 and 13
16 –––
VDD = 20V
––– 120 –––
ID = 100A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
73 –––
37 –––
RG = 2.5Ω
VGS = 10V,See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
nH
G
–––
7.5
and center of die contact
VGS = 0V
S
Ciss
Input Capacitance
––– 6950 –––
––– 1660 –––
––– 200 –––
––– 6250 –––
––– 1470 –––
––– 2320 –––
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
pF
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
––– –––
––– –––
170
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
680
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 73 110
––– 200 300
V
TJ = 25°C, IS = 100A, VGS = 0V
TJ = 25°C, IF = 100A
ns
nC
Qrr
ton
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ꢀCoss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See Fig. 11)
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 0.13mH, VGS = 10V
RG = 25Ω, IAS = 100A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
ISD ≤ 100A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS
TJ ≤ 200°C
,
At the point of termination of the leads at the PCB, the temp.
should be limited to 175°C. The device case temperature is
Pulse width ≤ 400µs; duty cycle ≤ 2%.
allowed to be higher
2
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IRF1704
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 200 C
J
20µs PULSE WIDTH
T = 25 C
°
°
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
170A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 200 C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
10
4.0
-60 -40 -20
0
20 40 60 80 100120140160180200220
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF1704
12000
V
20
16
12
8
= 0V,
f = 1MHz
C
I
D
= 100A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
= 32V
= 20V
DS
DS
C
= C
gd
rss
10000
8000
6000
4000
2000
0
C
= C + C
oss
ds
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
60
Q
120
180
240
300
V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 200 C
J
100
10
1
10us
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
J
°
T = 200 C
V
= 0 V
GS
3.0
Single Pulse
10ms
10
0.0
0.5
V
1.0
1.5
2.0
2.5
3.5
1
10
100
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF1704
200
150
100
50
RD
LIMITED BY PACKAGE
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
90%
0
25
50
75
100
125
150
175
200
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1704
15V
1600
1200
800
400
0
I
D
TOP
40A
77A
DR IV ER
L
V
D S
BOTTOM 100A
D.U .T
R
+
-
G
V
D D
I
A
A S
VGS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
25
50
75
100
125
150
175
200
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
3.5
3.0
2.5
2.0
1.5
1.0
V
G
I
= 5.0mA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF1704
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T*
• Low Leakage Inductance
Current Transformer
-
.
.
+
-
-
+
.
RG
• dv/dt controlled by RG
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
-
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF1704
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIG NM ENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOU RC E
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTES:
1
2
D IMENSIONING
&
TOLERANCING PER ANSI Y14.5M, 1982.
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD MEASUREMENTS DO NOT INCLU DE BURRS.
C ONTROLLING DIMENSION : INCH
&
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IR F1010
W ITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NU MBER
LOT C ODE 9B1M
IR F1010
9246
9B
1M
D ATE COD E
(YYW W )
ASSEMBLY
LOT
CO DE
YY
=
YEAR
= W EEK
W W
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/02
8
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